MECSA Network :
From Design to Validation
Ernesto Limiti
MECSA and Dipartimento di Ingegneria Elettronica,
Università degli Studi di Roma Tor Vergata
[email protected]
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
MECSA structure and composition - 1
• MECSA stands for Microwave Engineering Center for
Space Applications (italian legal name “Centro
Interuniversitario di Ingegneria delle Microonde per
Applicazioni Spaziali”)
• It is formally a “Inter-Universitary Research Center”, with
purely Public nature.
• In practice, it is a large specialized and distributed Research
Center, focused on Microwave Theory and Techniques.
• Established nearly 20 years ago, MECSA groups actually ten
Universities in Italy:
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA structure and composition - 2
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA structure and composition - 3
• Total number of researchers (staff) is over 100, all of them
belonging to the MTT community. Post-docs and PhDs are
variable in number along years.
• A limited number of support personnel is provided for the
MECSA headquarters only, managing the administrative and
financial matters.
• The Center governing body (management committee) is
formed by 2 elected representatives for each participating
University.
• Among them, a pro-tempore Director is elected (actually prof.
Ernesto Limiti).
• The governing body meets twice a year, and a Thematic
Scientific meeting is also held at least once a year, grouping all
researchers.
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA activities - 1
MECSA activities can be grouped in two main categories :
• Microwave Electronics: devices, circuits and subsystems
• EM Techniques, Propagation and remote sensing
For the sake of brevity, only the first group will be addressed in
this presentation.
Regarding the second group, several other examples may be
found in presentations of the present workshop.
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA activities - 2
Within this area,
• Device characterisation and modelling: linear, non-linear and noise
up to 110GHz (and above), scaleable, bias-dependent modelling
with different approaches (equivalent-circuit, black-box, physical)
• Circuit and subsystem design: Amplifiers (PAs, LNAs, VGAs,
DPAs ..), Mixers (resistive, passive, active …), frequency
multipliers, multifunction (Core chips, T/R chips, Integrated
Receivers …) adopting state-of the art design methodologies. Longtrack experience in Hybrid and MMIC design with many foundries
(SLX, UMS, OMMIC, WIN, NGS, TRW, Triquint, Raytheon, …).
• Subsystems verification and testing regarding all of the above …
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA characterisation facilities - 1
MECSA laboratories are featured by complementary specific
competences and the necessary redundancy for standard tasks.
As an example,
• Tor Vergata unit  small-signal and noise
• Torino unit  large-signal characterisation
• Bologna unit  non-linear modelling
To this goal, the available equipment must be at the state-of-theart and complete !
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA characterisation facilities - 2
Tor Vergata
• 2 Vector Network Analysers (HP 8510C 0.05-50 GHz and Anritsu
37XXXD, 0.05-65 GHz, extended to 110 GHz)
• 2 Spectrum Analyser (HP 70000 DC-40 GHz, Agilent PSA E4448A
3Hz-50GHz)
• Noise Measurement System (HP8970B-HP8971C DC-26.5 GHz, with
proprietary amplified SSB extension to 40 GHz)
• 2 Elettromechanical Tuners (Focus 0.08-18 GHz e 3-50 GHz)
• Digital Sampling Oscilloscope (TekTronix up to 50 GHz)
• I-V Pulsed Measurement System (GaAs Code)
• Power Amplifier (AR 0.8-4.2 GHz - 25 W)
• Synthesised Sources (2 Anritsu MG3692A 2-20 GHz e HP 83640A DC40 GHz)
• Vector Signal Source (Agilent E4438C 250 kHz-6 GHz)
• Probe Stations (Cascade Microtech RF-1 and proprietary semiauthomated one, equipped with anti-vibrating tables)
• Cryogenic Probe Station (down to 20 K, proprietary)
• Test-fixtures (Wiltron, Agilent, …)
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA characterisation facilities - 3
• HP8510 XF : HP VNA for on-wafer S parameter characterization 50 MHz-110 GHz
Bologna • Anritsu 37397D VNA for S parameter characterization 40 MHz-65 GHz
• Agilent N8975A Noise Figure Analyzer (10 MHz-26.5 GHz)
• Agilent E5052A 10 MHz- 7 GHz Signal Source Analyzer (phase noise measurements)
• National Instrument PXI-1042Q High speed digitizer and VST: arbitrary modulated
signal Tx and Rx
• HP 8563E Spectrum Analyzer
• Anritsu ML 2488A Power Meter
• Proprietary measurement system for on-wafer pulsed I/V characterization
• Bias supplies for static I/V characterization of electron devices
• 2 Cascade probe stations for on wafer measurements and Temptronic temperature
controlled thermo chuck
• HP 83650B 10 MHz- 50 GHz Swept Signal Generator
• TWTA amplifiers: Logmetrics A340 4-8 GHz - 20 Watt, Hughes 8001H 29.5-40 GHz 1 Watt, Varian 6900K 8-18 GHz - 10 Watt.
• Auto step-back ultrasonic wedge bonder Kulicke & Soffa (gold and aluminium wires)
• LPKF Protomat HF100 milling and drilling machine for microwave hybrid circuits
• Micromanipulator station for die mounting , die attach station with epoxy conductive
glue
22 mm2 class 10000 clean room Lab
• Die attach eutectic brazing station, SMD components welder station with thermal
control
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA characterisation facilities - 3
Torino
• Vector Network Analyzer HP 8510C [0.05 GHz -40 GHz]
•
Vector Network Analyzer Anritzu up to 40 GHz
•
Vector Network Analyzer Scorpion [10 MHz - 6 GHz] + calibrated noise sources
•
Spectrum Analyzer Agilent [9 KHz – 26.5 GHz]
•
Signal Integrity Network Analyzer, Lecroy Sparc 3400E [40 Gs/s]
•
Signal Generator, Agilent ESG-D Series [250 KHz – 4 GHz]
•
Power Meter, Agilent EPM Series [10 MHz - 40 GHz]
•
Maury Automated Tuner System and Active Load-Pull System Maury-PAF
•
Microwave Transition Analyzer HP [DC - 40 GHz]
•
Solid-State Mil Mega Power Amplifiers 27 W, [0.8 GHz – 4 GHz, 1 - 30W]
•
2 TWT Variant Power Amplifiers [12 GHz -18 GHz]
•
2 Synthesized Source HP up to 20 GHz
•
High current multi-channel DC power supply and high current bias tee for high
power GaN device bias, Agilent N5769A, [1500W, 100V]
•
Vector Signal Analyzer, Agilent MXA N9020A, [BW 30 MHz, 26 GHz]
•
2 Cascade Automatic probe station for on-wafer characterization
•
Cascade probe station with thermally controlled chuck
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA characterisation facilities - 4
Closed Loop Cryo probe station (down to
20K)
Active Harmonic Load-Pull
Phase noise characterisation
PHASE NOISE DATA ACQUISITION
Computer Controlled
Microwave Tuner
SP4T
BANDPASS FILTER
AT 6.5 GHz
S3c
CIRCULATOR
CH 1
T3
DIRECTIONAL
COUPLER
NS
DIRECTIONAL
COUPLER
S3
50 Ohm
ISOLATOR
TERM
BIAS
TEE
TUNER
IN
DUT
SOURCE-PULL BLOCK
BIAS
TEE
OUTPUT BLOCK
RCVR
DPDT
Computer Controlled
Microwave Tuner
BIAS TEE
BIAS TEE
T1
VNA Reference Planes
S1
Probe Station
On Wafer
DEVICE
PC SOFTWARE
CONTROL
AND DATA
ACQUISITION
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
ZOUT TUNING
Gate/Base
Bias Network
ISOLATOR
T2
S2
ZIN TUNING
DUT Reference Planes
CH 2
TUNER
OUT
LOOP FREQUENCY
AND AMPLITUDE TUNING
VNA
Computer Controlled
Microwave Tuner
POWER AND FREQUENCY DATA ACQUISITION
S-Par & Noise integrated Test Bench
SPECTRUM
ANALYZER AND
POWER METER
E5052A SIGNAL
SOURCE ANALYZER
Drain/Coll
Bias Supply
IC/ID ACQUISITION
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MECSA activities - 3
MECSA facilities are clearly used for internally-funded and
coordinated basic research, and are very often adopted to support
external companies for
• Technology assessment
• Technology optimisation (realise-characterise-model
loop)
• Technology development
• Realised subsystem characterisation
• Active/passive device model extractions
• PDKs development and verification
• ad-hoc modelling
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA activities - 4
Examples :
•
KorriGan : first large European-scale GaN project, in
which MECSA acted (also) as device modelling center for
Selex, III-V Lab and QinetiQ technologies, while
evolving
•
GARANTE : Italian MoD project for 0.25m GaN
technology assessment (Selex ES)
•
Quagas : ASI project for Space qualification of 0.25m
GaAs technology (Selex ES)
•
TeraSCREEN : FP7 project, within which a 0.04m
mHEMT technology is developed (OMMIC)
•
In the past, several examples including COSMIC,
MANPOWER, ESPRIT IV … European projects
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA activities - 5
… but also technological investigations:
• Physical simulation and modelling (Monte Carlo, Driftdiffusion …), using both commercial and ad-hoc simulation
tools.
• Thermal simulation and modelling (by using commercial
and ad-hoc simulation tools)
• Thermal characterisation (nonlinear thermal impedance
measurements)
• Basic technological exploration (e.g. different semiconductor
alloys and devices with non-conventional operating principles
featured by very low TRL, such as Diamond, see you
tomorrow !)
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA activities - 6
• Regarding microwave circuit design, the research focus
has been historically directed towards Design
Methodologies for high- efficiency transmitting
subsystems and high performance receivers.
• The heritage of MECSA as circuit design centre dates
back to the early ’90s with the COSMIC FP2 project
(monolithic transimpedance amplifier design) and
continues since then with the participation to many
projects, both national and international, public- or
privately funded.
• All the major CAD tools are available (circuit, system
and EM-oriented) also for commercial use.
• A representative list is attempted in the following, as an
example of MECSA portfolio.
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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EDA project KorriGAN - 1
Development of GaN HEMT Technology in Europe
(KorriGAN), (2005-2009).
• To take advantage of high power densities and
power handling of GaN, Switching SPDT (up to 18
GHz) for transmitters.
• Design with Selex – SI and Tiger GaN 0.25 µm
microstrip technology
X Band SPDT GaN Switch
• Small- and Large-signal characterisation of of
HEMT devices for switching applications
• Device modelling
• Broadband (2-18GHz) and Narowband (X Band)
SPDT switch design
2‐18 GHz SPDT GaN Switch
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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EDA project KorriGAN - 2
Development of GaN HEMT Technology in Europe
(KorriGAN), (2005-2009).
• To take advantage of high robustness and power
handling of GaN devices for Low Noise
applications.
• Design with Selex – SI GaN 0.25 µm microstrip
technology
2‐18 GHz GaN DLNA – V1
• Noise, Small- and Large-signal characterisation of
of HEMT devices for switching applications
• Device modelling
• 2 Broadband (2-18GHz) robust LNA design as
cascade of distributed amplifier cells
2‐18 GHz GaN DLNA – V2
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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ASI project VIAS
Preliminary design of low phase noise MMIC VCO for onboard TX/RX
systems of SAR Payload of second generation (VIAS), (2006-2007).
• Application: development of MMIC
VCO for on board Frequency Generation
Unit
• Design with 2m GaInP/GaAs HBT
Technology from WIN and UMS and
0.25m pHEMT GaAs technology from
Triquint
7.2‐7.5 GHz MMIC VCO in GaAs HBT technology 7.2‐7.5 GHz MMIC VCO in pHEMT GaAs Technology
5.2‐5.5 GHz MMIC VCO in GaAs HBT technology 11‐11.5 GHz MMIC VCO in GaAs HBT Technology
• Characterization of HBT devices low
frequency noise
• Identification of nonlinear noise models
for phase noise simulation and
optimization
• Development of design techniques for low
phase noise MMIC oscillator design
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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ASI project PROMIX - 1
Design and implementation of the MMIC chip set for X-band T/R modules for
SAR Payload of second generation (PROMIX), (2009-2010).
• Application: X-band T/R modules for SAR
• 2m GaInP/GaAs HBT Technology HB20PX from
UMS
• Characterization of HBT devices for model
optimization
• Design and characterization of driver amplifiers
and HPAs operating in pulsed condition (100 us /
30% duty)
X-band 1W MMIC Linear Power Amplifier
in InGaP/GaAs HBT Technology
• Optimization of HBT thermal behavior to avoid
thermal runaway
• BUS bar solution for the final stage
• Optimization of large signal working point to avoid
parametric oscillations
X-band 10W MMIC High Power Amplifier
in InGaP/GaAs HBT Technology
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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ASI project PROMIX - 2
Design and implementation of the MMIC chip set for X-band T/R modules for
SAR Payload of second generation (PROMIX), (2009-2010).
• Application: X-band T/R modules for SAR
• 0.2m E/D PHEMT technology ED02AH from
OMMIC
• Design and realisation of a X-Band Core Chip
featured by 6 bit phase control, 6 bit amplitude
control and T/R switch, with integrated 3-stages
LNA and MPA
• On-board S/P conversion
• T/R control of amplifiers’ biases
• Less than 15mm2 total area
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
X-band Core Chip in OMMIC
ED02AH Technology
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ASI project PAGaN
GaN power amplifiers for space applications: design, development and
experimental characterization (PAGAN), (2010-2013).
• Application: future generation of C-band T/R modules for
SAR
• 0.25m AlGaN/GaN HEMT Technology GH25 from UMS
• Technology in development phase: cooperation mode with
the foundry
• Characterization of GaN devices for model optimization
1st run: [5.2-5.8] GHz 20W MMIC HPA
• Characterization of GaN HEMT dispersive effects and
thermal impedance
• Design of 2 MMIC HPA with 20 W and 40 W output
power at C band (5.2-5.8 GHz) and 40% PAE (pulsed 50
us /10 % duty)
2nd run: [5.2-5.8] GHz 40W
MMIC HPA
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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ESA project SCFE
Single GaN Chip Front-End (SCFE), (2013-2014).
• Application: future generation of C-band T/R
modules for SAR
• 0.25m AlGaN/GaN HEMT Technology GH25 from
UMS and 0.5 AlGaN/GaN HEMT Technology from
Selex ES
• Foundries in the project team
UMS SCFE Layout.
MMIC size is 6.9 x 5.4 mm2
• Characterization of passive and active GaN devices
for model extraction/verification/optimization
• Design of SCFE in the two technologies integrating
HPA, LNA and T/R output switch to obtain 40W
output power (40%PAE), 36dB gain and 2.5dB NF in
C Band
SLX SCFE Layout.
MMIC size is 7.28 x 5.40 mm2.
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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FP6 project RadioNET (Pharos)
Advanced RadioAstronomy in Europe
(RadioNET), (2006-2009).
• Application: build the future instruments for C-Band
observation as focal-plane array receivers
• 0.2m pHEMT Technology ED02AH from OMMIC
• Design of the entire electronic focal plane array
components: LNAs, MPAs, PSs, ATTs (PAMs)
• Assembly and test of the entire focal plane array
• Cryogenic (20K) operation of the LNAs, 77K operation
of the PAMs
FPA prototype
LNA (full C-Band)
Buffered attenuator (full C-Band)
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
6-bit PS (full C-Band)
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ESA project SMPA
Switched Mode Power Amplifiers Realization of a Transmitter based on
PWM (SMPA), (2013-2015).
Chip 1
AM1 (analog)
PWM On-chip
modulator driver
• Application: study and development of a
Solid State Transmitter for Synthetic
Aperture Radar (SAR) in P-band (435
MHz) for Earth observation, capable of
achieving more than 80% efficiency at high
power level (150 W) employing European
technologies
Chip 2
RF carrier Power
PWM On-chip
modulator driver
Matching and resonator
Power stage
Out
splitter
Chip 3
Wilkinson
Combiner
AM3 (analog)
PWM On-chip
modulator driver
Matching and resonator
Power stage
Chip 4
Wilkinson
Combiner
AM4 (analog)
PWM On-chip
modulator driver
Matching and resonator
Power stage
Transmitter architecture
Output Performance
60
100
Pout_dBm[::,Index1]
m13
50
m1480
40
60
30
20
m13
plot_vs(PAE[::,Index1], delta)=85.737
m14
plot_vs(Pout_dBm[::,Index1], delta)=45.758
10
0.10
40
PAE[::,Index1]
• Design of the power stages
Wilkinson
Combiner
AM2 (analog)
• Driver stages and modulator: IHP CMOS
process
• Power stages : UMS discrete devices
(CHK040A)
Matching and resonator
Power stage
20
0
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
Duty cycle
Preliminary performance
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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FP7 project SLOGAN
Space quaLification Of High-Power SSPA based on GaN technology
(SLOGAN), (2013-2016).
• Application: to evaluate and apply the
potentiality of mature UMS European GaN
based technology (GH-50) for space
applications, through the development of a
GaN SSPA EQM for the next generation of
Galileo satellites (E1 band, Pout 300W)
ready to replace the current TWTAs
• Design and assistance in space qualification
of the power stages
80W PA
SSPA assembly
40W PA
Preliminary Breadboarding of the PAs
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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… not only projects, but also
Design-on-Demand :
Full Q Band LNA (OMMIC 70nm)
2-20GHz LNA (UMS 0.25um)
Full W Band LNA (OMMIC 70nm)
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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Conclusions
• MECSA is an italian public research center joining together
the experimental resources, the expertise and the critical mass
of ten universities, representing the largest center in Italy in
MTT.
• The center heritage is based on more than 25 years experience
of the participating universities in the field.
• Only microwave electronic activities have been briefly
presented: the activities in EM and propagation fields are
equally widespread.
• MECSA is open to collaborations, not only academic but also
industrial and applied research in general, to promote and
diffuse (as in its DNA) MTT, as demonstrated by the longtrack experience briefly recalled.
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016
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MECSA
Microwave Engineering Center
for Space Applications
Ernesto Limiti
MECSA and Dipartimento di Ingegneria Elettronica,
Università degli Studi di Roma Tor Vergata
[email protected]
Tel: +39 06 72597351
Fax : +39 06 72597953
Mob: +39 347 2537988
Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016