IDB09E120
Fast Switching EmCon Diode
Product Summary
Feature
VRRM
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
1200
V
IF
9
A
VF
1.65
V
T jmax
150
°C
PG-TO263-3-2
• Low forward voltage
• Easy paralleling
2
1
* RoHS compliant
3
Type
Package
IDB09E120
PG-TO263-3-2
Ordering Code
-
Marking
Pin 1
PIN 2
PIN 3
D09E120
NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continous forward current
IF
A
TC=25°C
23
TC=90°C
14.4
Surge non repetitive forward current
I FSM
50
I FRM
36
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
W
Ptot
TC=25°C
69
TC=90°C
33
Operating and storage temperature
Soldering temperature
Tj , Tstg
TS
-55...+150
245
°C
°C
reflow soldering, MSL1
Rev.2.2
Page 1
2007-09-01
IDB09E120
Thermal Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
1.8
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm 2 cooling area 1)
-
35
-
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Reverse leakage current
IR
µA
V R=1200V, T j=25°C
-
-
100
V R=1200V, T j=150°C
-
-
700
Forward voltage drop
VF
V
IF=9A, Tj=25°C
-
1.65
2.15
IF=9A, Tj=150°C
-
1.7
-
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.2
Page 2
2007-09-01
IDB09E120
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Reverse recovery time
ns
t rr
V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C
-
140
-
V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C
-
200
-
V R=800V, IF=9A, di F/dt=750A/µs, Tj=150°C
-
210
-
Peak reverse current
A
I rrm
V R=800V, IF = 9 A, diF/dt=750A/µs, Tj=25°C
-
13.3
-
V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C
-
16.1
-
V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C
-
16.5
-
Reverse recovery charge
nC
Q rr
V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C
-
950
-
V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C
-
1470
-
V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C
-
1600
-
V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C
-
5.4
-
V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C
-
6.5
-
V R=800V, IF=9A, di F/dt=750A/µs, Tj=150°C
-
6.6
-
Reverse recovery softness factor
Rev.2.2
S
Page 3
2007-09-01
IDB09E120
1 Power dissipation
2 Diode forward current
Ptot = f (TC)
IF = f(TC)
parameter: Tj ≤ 150 °C
parameter: Tj≤ 150°C
25
70
W
A
IF
P tot
50
40
30
15
10
20
5
10
0
25
50
75
100
0
25
150
°C
50
75
100
150
°C
TC
TC
3 Typ. diode forward current
4 Typ. diode forward voltage
IF = f (VF)
VF = f (Tj)
27
2.6
A
V
-55°C
25°C
100°C
150°C
21
18A
2.2
IF
VF
18
15
2
12
1.8
9A
9
1.6
4,5A
6
1.4
3
0
0
0.5
1
1.5
2
1.2
-60
3
V
VF
Rev.2.2
Page 4
-20
20
60
100
°C
Tj
160
2007-09-01
IDB09E120
5 Typ. reverse recovery time
6 Typ. reverse recovery charge
trr = f (diF/dt)
Qrr =f(diF/dt)
parameter: V R = 800V, T j = 125°C
parameter: VR = 800V, Tj = 125 °C
690
2000
ns
nC
18A
590
1800
540
1700
trr
490
440
Q rr
18A
9A
4,5A
1600
9A
1500
390
1400
340
1300
290
1200
240
4,5A
190
1100
140
1000
90
200
300
400
500
600
700
800
900
200
A/µs 1000
di F/dt
300
400
500
600
700
800
A/µs 1000
di F/dt
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
Irr = f (diF/dt)
S = f(diF /dt)
parameter: V R = 800V, T j = 125°C
parameter: VR = 800V, Tj = 125°C
21
18
17
14
15
12
S
Irr
A
13
10
18A
9A
4,5A
11
8
9
6
7
4
5
200
Rev.2.2
18A
9A
4,5A
300
400
500
600
700
800
2
200
A/µs 1000
di F/dt
Page 5
300
400
500
600
700
800
A/µs 1000
di F/dt
2007-09-01
IDB09E120
9 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = t p/T
10 1
IDP09E120
K/W
ZthJC
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
0.05
0.02
10 -3
0.01
single pulse
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2.2
Page 6
2007-09-01
IDB09E120
Rev.2.2
Page 7
2007-09-01
IDB09E120
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev.2.2
Page 8
2007-09-01