PUBBLICAZIONI ULTIMI 3 ANNI
1.
Bernardi M., S g a r l a t a A . , F a n f o n i M . , P e r s i c h e t t i
a n d Balzarotti A.
L .,
Self-assembly of Ge dots on Silicon: an example of controlled
nanomanufacturing S u p e r l a t t i c e s a n d M i c r o s t r u c t u r e s 46,
3 1 8 (2 0 0 9 ).
2.
Thorpe S.D., Arciprete A., Placidi E., Patella F., Fanfoni M., Balzarotti A.,Colonna S., Ronci
F., Cricenti A., Verdini A., Floreano L., Morgante A.
XPS and STM study of Mn in corporation on the GaAs(001) surface
S u p erlattices an d
(2 0 0 9 ).
3.
M i c r o s t r u c t u r e s 46, 2 5 8
Arciprete F., Placidi E., Patella F., Fanfoni M., Balzarotti A., Vinattieri A., Cavigli L.,
Abbarchi M., Gurioli M., Lunghi L., and Gerardino A.
Selective growth of InAs quantum dots on SiO2-masked GaAs
J. of Nanophotonics 3, 031995 (2009).
4.
L.Persichetti, A.Sgarlata, M.Fanfoni, M.Bernardi and A.Balzarotti
Step-step interaction on vicinal Si(001) surfaces: a scanning tunnelling microscopy study
Phys.Rev.B 80, 075315 (2009).
5.
Persichetti L., Sgarlata A., Fanfoni M., and Balzarotti A.
Shaping Ge islands on Si(001) surfaces with misorientation angle
Phys. Rev.Letters 104, 036104, (2010).
6.
Arciprete F., Fanfoni M., Patella F., Della Pia A., Balzarotti A.,
Placidi E.
Temperature dependence of the size distribution function of InAs quantum dots on
GaAs(001)
Phys. Rev.B 81, 165306 (2010).
Selected article for vol. 21, issue 16 of VJ of Nanoscale Science & Technology (April 19, 2010).
7..
Persichetti L., Sgarlata A., Fanfoni M., and Balzarotti A
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation
angle
Phys.Rev.B 81, 113409 (2010).
8..
Persichetti L., Sgarlata A., Fanfoni M., and Balzarotti A.
Ripple-to-dome transition: The growth of Ge on Si(11 10) vicinal surface.
Phys.Rev.B 82, 121309 (R) (2010).
Selected article for vol. 22, issue 15 of VJ of Nanoscale Science & Technology (October 4, 2010). Cond
mat.http://arxiv.org/abs/1005.5231
9.
Persichetti L., Sgarlata A., Fanfoni M., and Balzarotti A.
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality
Phys.Rev.Lett. 106, 055503 (2011).
Selected article for vol. 23, issue 6 of VJ of Nanoscale Science & Technology (February 14, 2011).
10.
Persichetti L., Sgarlata A., Fanfoni M., and Balzarotti A.
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut
angle
J.Nanosci. Nanotechnol. 11,1-5 ,(2011).
11.
Persichetti L., Capasso A., Ruffell S., Sgarlata A., Fanfoni M., Motta N. and
Balzarotti A.
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation
Thin Solid Films 519, 4207 (2011).
12.
Placidi E.,Zallo E., Arciprete F., Fanfoni M., Patella F., and Balzarotti A.
Comparative study of low temperature growth of InAs and InMnAs quantum dots
Nanotechnology 22, 195602 (2011).
13.
Colonna S., Placidi E., Ronci F., Cricenti A., Arciprete F., Balzarotti A.
The role of kinetics on the Mn-induced reconstruction of the GaAs(001)surface
J.Appl.Phys. 109, 123522 (2011).
14.
Valentini F., Persichetti L., Sgarlata A., Balzarotti A., and Palleschi G.
Morphological and electronic characterization of functionalized graphene
nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning
tunneling microscopy study
Fullerenes, Nanotubes, and Carbon Nanostructures (in press).
15.
Persichetti Luca, Tombolini Francesca, Casciardi Stefano, Diociaiuti Marco, Fanfoni
Massimo, Palleschi Giuseppe, Sgarlata Anna, Valentini Federica, Balzarotti Adalberto
Folding and stacking defects of graphene flakes probed by electron nanobeam
Appl. Phys. Lett. 99, 041904 (2011).
16.
Selected article for vol. 24, issue 6 of VJ of Nanoscale Science & Technology (August 8, 2011).
Persichetti L. ,Menditto R., Sgarlata A., Fanfoni M., and Balzarotti A.
Hug-like island growth of Ge on strained vicinal Si(111) surfaces
Appl. Phys. Lett. 99, 161907 (2011).
Selected article for vol. 24, issue 18 of VJ of Nanoscale Science & Technology (October 31, 2011).
17.
Sgarlata A., Persichetti L., Capasso A., Fanfoni M., Motta N., and Balzarotti A.
Dri ving Ge Island Ordering on Nanostructured Si surfaces
Nanoscience and Nanotechnology Letters 3, 841 (2011).
18.
Placidi E., Arciprete F., Magri R., Rosini M., Vinattieri A., Cavigli L., Gurioli M., Giovine
E., Persichetti L., Fanfoni M., Patella F., Balzarotti A.
InAs epitaxy on GaAs)001): a model case of strain-driven self-assembling of quantum dots
S. Bellucci (ed.), Self-Assembly of Nanostructures: The INFN Lectures, Vol. III,Lecture Notes in
Nanoscale Science and Technology 12, 73-125 (2012)
Springer Science+Business Media, LLC 2011
19.
Sgarlata A., Persichetti L., Capasso A , Fanfoni M., Motta N. and Balzarotti A.
Towards a controlled growth of self-assembled nanostructures: shaping, ordering and
localization in Ge/Si heteroepitaxy
S. Bellucci (ed.), Self-Assembly of Nanostructures: The INFN lectures, Vol. III,
Lecture Notes in Nanoscale Science and Technology 12, 201-263 (2012)
Springer Science+Business Media, LLC 2011.
20.
Persichetti L., Sgarlata A., Fanfoni M. and Balzarotti A.
Formation and Localization of GeSi Quantum Dots on vicinal surfaces: a Scanning Tunneling
Microscopy Characterization
26th European Conference on Surface Science (ECOSS-26) Aug 30- Sept 9 2009, Parma, Italy (Oral
presentation).
21.
Arciprete F., Patella F., Placidi E., Fanfoni M., Balzarotti, A., Vinatteri A., and Gerardino A.
Nanoscale Selective Growth of InAs Quantum Dots on GaAs(001): A Bottom-up Approach
MRS fall meeting 2009, 30th November – 3rd December, Boston, USA (Oral presentation).
22.
Balzarotti A, Sgarlata A., Persichetti L., Fanfoni M.
Nucleation of GeSi quantum dots on Si(001) vicinal surfaces
XCVI Convegno Nazionale della Società Italiana di Fisica, Bologna 20-24 Settembre 2010, SiF Proc.
pag.143 (Compositori .Bologna.2010),(invited oral presentation).
23.
Persichetti L., A.Sgarlata A., Fanfoni M. and Balzarotti A.
Shaping Ge islands with miscut angle
Nanosea 2010, 3rd Intern.Conf.on Nanostructure Self-Assembly, Cassis, 28 giugno-2 Luglio 2010,
(invited oral presentation).