IDD23E60
Fast Switching EmCon Diode
Product Summary
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
VRRM
600
V
IF
23
A
VF
1.5
V
T jmax
175
°C
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
Type
Package
IDD23E60
PG-TO252-3-1
Ordering Code
-
Marking
D23E60
Pin 1 PIN 2,4
NC
PIN 3
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continous forward current
IF
Value
600
V
A
TC=25°C
41.6
TC=90°C
27.8
Surge non repetitive forward current
Unit
I FSM
89
I FRM
65
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
W
Ptot
TC=25°C
115.4
TC=90°C
65.4
Operating and storage temperature
Soldering temperature
reflow soldering, MSL3
Rev.2.2
Tj , Tstg
TS
Page 1
-55...+175
260
°C
°C
2007-04-24
IDD23E60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
1.3
@ min. footprint
-
-
75
@ 6 cm 2 cooling area 1)
-
-
50
Characteristics
Thermal resistance, junction - case
RthJC
SMD version, device on PCB:
RthJA
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Reverse leakage current
IR
µA
V R=600V, Tj=25°C
-
-
50
V R=600V, Tj=150°C
-
-
1900
Forward voltage drop
VF
V
IF=23A, T j=25°C
-
1.5
2
IF=23A, T j=150°C
-
1.5
-
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.2
Page 2
2007-04-24
IDD23E60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Reverse recovery time
ns
t rr
V R=400V, IF=23A, diF/dt=1000A/µs, Tj=25°C
-
120
-
V R=400V, IF=23A, diF/dt=1000A/µs, Tj=125°C
-
164
-
V R=400V, IF=23A, diF/dt=1000A/µs, Tj=150°C
-
170
-
Peak reverse current
A
I rrm
V R=400V, IF = 23A, diF/dt=1000A/µs, Tj =25°C
-
17
-
V R=400V, IF =23A, diF/dt=1000A/µs, T j=125°C
-
19.5
-
V R=400V, IF =23A, diF/dt=1000A/µs, T j=150°C
-
21.5
-
Reverse recovery charge
nC
Q rr
V R=400V, IF=23A, diF/dt=1000A/µs, Tj=25°C
-
970
-
V R=400V, IF =23A, diF/dt=1000A/µs, T j=125°C
-
1580
-
V R=400V, IF =23A, diF/dt=1000A/µs, T j=150°C
-
1770
-
V R=400V, IF=23A, diF/dt=1000A/µs, Tj=25°C
-
4.4
-
V R=400V, IF=23A, diF/dt=1000A/µs, Tj=125°C
-
4.8
-
V R=400V, IF=23A, diF/dt=1000A/µs, Tj=150°C
-
5
-
Reverse recovery softness factor
Rev.2.2
S
Page 3
2007-04-24
IDD23E60
1 Power dissipation
2 Diode forward current
Ptot = f (TC)
IF = f(TC)
parameter: Tj ≤ 175 °C
parameter: Tj≤ 175°C
45
120
A
W
35
30
75
IF
P tot
90
25
60
20
45
15
30
10
15
0
25
5
50
75
100
125
0
25
175
°C
50
75
100
125
TC
TC
3 Typ. diode forward current
4 Typ. diode forward voltage
IF = f (VF)
VF = f (Tj)
2
70
V
A
46A
1.8
-55°C
25°C
100°C
150°C
1.7
VF
IF
50
175
°C
40
1.6
23A
1.5
30
1.4
1.3
20
11,5A
1.2
10
1.1
0
0
0.5
1
1.5
1
-60
2.5
V
VF
Rev.2.2
Page 4
-20
20
60
100
160
°C
Tj
2007-04-24
IDD23E60
5 Typ. reverse recovery time
6 Typ. reverse recovery charge
trr = f (diF/dt)
Qrr =f(diF/dt)
parameter: V R = 400V, T j = 125°C
parameter: VR = 400V, Tj = 125 °C
2100
500
46A
nC
ns
1900
1800
46A
23A
11.5A
350
1700
Qrr
trr
400
23A
1600
1500
300
1400
1300
250
1200
200
11.5A
1100
1000
150
900
100
200
300
400
500
600
700
800
800
200
A/µs 1000
di F/dt
300
400
500
600
700
800
A/µs 1000
diF/dt
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
Irr = f (diF/dt)
S = f(diF /dt)
parameter: V R = 400V, T j = 125°C
parameter: VR = 400V, Tj = 125°C
24
13
A
20
18
10
16
S
Irr
11
46A
23A
11.5A
14
8
12
7
10
6
8
5
6
4
4
200
Rev.2.2
300
400
500
600
700
800
3
200
A/µs 1000
di F/dt
Page 5
46A
23A
11.5A
9
300
400
500
600
700
800
A/µs 1000
diF/dt
2007-04-24
IDD23E60
9 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = t p/T
10 1
IDD23E60
K/W
ZthJC
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
0.05
single pulse
0.02
10 -3
0.01
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2.2
Page 6
2007-04-24
IDD23E60
PG-TO252 (D-Pak)
dimensions
symbol
A
[mm]
max
min
max
6.40
6.73
0.2520
0.2650
0.2067
0.2165
B
5.25
5.50
C
(0.65)
(1.15)
D
0.63
E
Rev.2.2
Page 7
inch]
min
(0.0256) (0.0453)
0.89
0.0248
2.39
0.2520
0.0862
0.0941
2.28
0.0350
F
2.19
G
0.76
0.98
0.0299
0.0386
H
0.90
1.21
0.0354
0.0476
K
5.97
6.23
0.2350
0.2453
L
9.40
10.40
0.3701
0.4094
M
0.46
0.58
0.0181
0.0228
N
0.87
1.15
0.0343
0.0453
P
0.51
-
0.0201
-
R
5.00
-
0.1969
-
S
4.17
-
0.1642
-
T
U
0.26
-
1.02
-
0.0102
-
0.0402
-
2007-04-24
IDD23E60
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev.2.2
Page 8
2007-04-24