Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Advanced Large Area Electronic Devices and Integrated Circuits
(ALADIN)
Group Leader: Guglielmo Fortunato ([email protected])
The group has strong expertise in large area electronics (active matrix for flat panel
display, sensors, organics electronics, etc.) with particular focus on thin film
transistors (TFTs). This research activity has been supported, in the years, by different
collaborations with companies like Philips, ST­Microelectronics, THALES and
European projects as ECAM III and FlexiDis. The key frame­based research activity
includes devices designing, fabrication and electrical testing. Devices and circuits
analysis is performed by 2D­3D numerical simulations. Recently, the group activity is
mainly focused on realization of low­temperature devices on polymeric flexible
substrates, for applications in new generation of flat panel display and sensors. Two
TFT fabrication technologies were developed, based on organic and inorganic
materials. The principal inorganic semiconductor materials used in TFTs are
amorphous, micro­crystalline and polycrystalline silicon. In particular, the group has
developed a strong know­how on silicon excimer laser crystallization technique,
being one of the groups pioneers in this field. In organic TFT field, the group has
developed a innovative technology of buffer layers for devices based on
pentacene, thus allowing electrical characteristics to be improved.
via del Fosso del Cavaliere 100
00133 Roma (ITALY)
Tel. : +39 06 4993 4594
Fax : +39 06 4993 4066
[email protected]
2.MATERIALS CHARACTERIZATION
A SEM image of a laser crystallized
amorphous silicon film (a­Si). With the
excimer laser irradiation technique it is
possible to optimize the quality of
polysilicon film, his uniformity and the
mean grain size adjusting energy and
shots number.
1m
Atomic force microscope (AFM)
analysis of polysilicon grain size after
the effects of an annealing at low
temperature (<300°C) plus the
excimer laser irradiation.
1.DEVICE PHYSICS
2D numerical simulation for the
impact ionization rate at the poly­
Si TFT drain junction. These models
are implemented in order to
analyze the device electrical
behavior and to improve his
characteristics.
Temperature distribution in a TFT
obtained by 3D simulation for self­
heating effect analysis.
AFM analysis for a thin
film of pentacene
thermally evaporated
by RADAK source.
Interface
state
density
(Nss)
deduced
from
quasi­static
characteristics by Khun method for
SiO2 films deposited at room
temperature by ECR­PECVD and
annealed
at
increasing
temperatures
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
3.ORGANIC THIN
FILM
TRANSISTORS ( OTFTs)
Organic
TFTs
realization
based on pentacene films
thermally evaporated on
flexible plastic substrates
encapsulated by parylene.
Poly­Si TFTs output
characteristics at increasing
Vg for a device realized on
plastic.
5.POLY­SI TFTs BASED CIRCUITS ON FLEXIBLE SUBSTRATES
Organic common gate TFTs
transfer characteristics for a
device with channel length
L= 10m.
4.POLYCRYSTALLINE SILICON
SUBSTRATES
Five­stages
ring
oscillator fabricated
on flexible substrate.
TFTs
ON
FLEXIBLE
Low temperature (<350°C)
Polysilicon TFTs fabricated on
flexible substrates (polyimide).
Inverter
fabricated
on polyimide.
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
LAB FACILITIES
Equipment for electrical tests :
1.
2.
3.
4.
Probe station Suss PM5HF ­ Analytical Probe
System for DC e HF electrical measurements
of samples up to 6”
Probe station for flexible substrates devices
measures
Variable Temperature Micro­Probe System by
MMR Technologies for electrical
measurements of devices in vacuum in a
temperature range of 80­580K
Probe station in clean room for samples
check during the fabrication process
Excimer laser system for a­Si crystallization of devices
fabricated on glass or flexible substrates.
Ink­Jet (DIMATIX) system
for organic devices realization
ECR­PECVD system for low­temperature deposition of
dielectric films (silicon oxide and silicon nitride) and
amorphous silicon layers.
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Publications ­ 2007
Riviste JCR
1) L. Mariucci, P. Gaucci, A. Valletta, F. Templier and G. Fortunato, Hot Carrier Effects in p­Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible
Substrates. Jpn. J. of Appl. Phys. Vol. 46, No. 3B, (2007) pp. 1299­1302
2) G. Lulli, M. Bianconi, M. Ferri, G. Fortunato, L. Mariucci, RBS­channeling analysis of ion­irradiation effects in heavily­doped Si:As, Nuclear Instruments and Methods in
Physics Research B 257 (2007) pp. 253–256
3) V. Privitera, A. La Magna, C. Spinella, G. Fortunato, L. Mariucci, M. Cuscunà, C. M. Camalleri, A. Magrì, G. La Rosa, B. G. Svensson, E. V. Monakhov, and F. Simon,
Integration of Melting Excimer Laser Annealing in Power MOS Technology, IEEE Trans. on Electron Devices, Vol 54 (2007) pp. 852­860
4) A.Valletta, P. Gaucci, L. Mariucci and G. Fortunato, Modelling velocity saturation and kink effects in p­channel polysilicon thin­film transistors, Thin Solid Films, vol. 515
, (2007) pp.7417­7421
5) P. Gaucci, L. Mariucci, A. Valletta, A. Pecora and G. Fortunato, F. Templier, Electrical stability in self­aligned p­channel polysilicon Thin Film Transistors, Thin Solid Films,
vol. 515, (2007) pp.7571­7575
6) Maria Losurdo, M.M. Giangregorio, A. Sacchetti, P. Capezzuto, G. Bruno, L. Mariucci and Guglielmo Fortunato, INSIGHT INTO EXCIMER LASER CRYSTALLIZATION
EXPLOITING ELLIPSOMETRY: EFFECT OF Si FILM PRECURSOR, Thin Solid Films, vol. 515, (2007) pp.7508­7512
7) A. Bonfiglietti, M. Cuscunà , M Rapisarda, A. Pecora, L. Mariucci, G. Fortunato, C. Caligiore, E. Fontana, S. Leonardi, F. Tramontana, Asymmetric fingered polysilicon
p­channel Thin Film Transistors structure for kink effect suppression, Thin Solid Films, vol. 515, (2007) pp. 7433­7436
8) S. Cipolloni, L. Mariucci, A. Valletta, D. Simeone, F. De Angelis and G. Fortunato, Aging effects in high performance Pentacene Thin Film Transistors, Thin Solid Films,
vol. 515 , (2007) pp. 7546­7550
9) A. Valletta, A. Bonfiglietti, M. Rapisarda, L. Mariucci, and G. Fortunato, S. D. Brotherton, Grain boundary evaluation in sequentially laterally solidified polycrystalline­
silicon devices, J. Appl. Phys. Vol. 101, 094502 (2007)
10) A. Valletta, A. Bonfiglietti, M. Rapisarda, L. Mariucci, A. Pecora, G. Fortunato, and S. D. Brotherton,Grain Boundary Characterisation in Sequentially Laterally
Solidified Polycrystalline­Silicon Thin Film Transistors, ECS Trans. Vol. 8, (2007) p. 211
11) A. La Magna, V. Privitera, G. Fortunato, M Cuscunà, B.G. Svensson, E. Monakhov, E. Kuitunen, J. Slotte, F. Tuomisto,Vacancy generation in liquid phase epitaxy of Si,
Phys. Rev. B 75, 235201 (2007)
12) L. Maiolo, A. Pecora, M. Cuscunà and G. Fortunato, Thermal annealing effects on the interface state density of metal­oxide­semiconductor capacitors with
electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide, Thin Solid Films, vol. 515, (2007) pp. 7590­7593
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Publications ­ 2006
Riviste JCR
1) A. Valletta, L. Mariucci and G. Fortunato, Hot carrier­Induced Degradation of LDD Polysilicon TFTs, IEEE Trans. on El. Dev., 53, 43 (2006)
2) V. Teppati, V. Camarchia, S. Donati Guerrieri, M. Pirola, A. Ferrero, G. Ghione, M. Peroni, P. Romanini, C. Lanzieri, S. Lavanga, A. Serino, L. Mariucci, Fabrication and
non­linear characterization of GaN HEMT on SiC and sapphire for high power applications, International Journal of RF and Microwave Computer­Aided Engineering, 16 ,
70 (2006)
3) P. Gaucci, A. Valletta, L. Mariucci, G. Fortunato, and S. D. Brotherton, Numerical Simulation of Parasitic Resistance Effects in Polycrystalline Silicon TFTs, IEEE Trans. on
El. Dev., 53, 573 (2006)
4) T. Toccoli, A. Pallaoro, N. Coppedè, and S. Iannotta, F. De Angelis, L. Mariucci, G. Fortunato, Controlling Field Effect Mobility in Pentacene Based Transistors by
Supersonic Molecular Beam Deposition, Appl. Phys. Lett., 88, 132106 (2006)
5) F. De Angelis, L. Mariucci, S. Cipolloni, and G. Fortunato, Analysis of electrical characteristics of high performance Pentacene Thin­Film Transistors with PMMA buffer
layer, Journ. of Non­Cryst. Solids, 352, 1765 (2006)
6) M. Cuscunà, G. Stracci, A. Bonfiglietti, A. di Gaspare, L. Maiolo, A. Pecora, L. Mariucci, G. Fortunato, Annealing temperature effects on the electrical characteristics
of p­channel polysilicon thin film transistors, Journ. of Non­Cryst. Solids, 352, 1723 (2006)
7) G. Fortunato, V. Privitera, A. La Magna, L. Mariucci, M. Cuscunà, B.G. Svensson, E. Monakhov, M. Camalleri, A. Magrì, D. Salinas, F. Simon, Excimer Laser annealing for
shallow junction formation in Si power MOS devices, Thin Solid Films, 504, 2 (2006)
8) F. De Angelis, S. Cipolloni, L. Mariucci and G. Fortunato, Aging effects in pentacene thin­film transistors: analysis of the density of states modification, Appl. Phys. Lett.,
88, 193508 (2006)
9) A. Bonfiglietti, A. Valletta, M. Rapisarda, L. Mariucci, G. Fortunato, Effects of Fabrication Parameters on the Electrical Stability of Gate Overlapped LDD Polysilicon
TFTs, Jpn. Journ. of Appl. Phys., 45, p. 4384 (2006)
10) A. Valletta, P. Gaucci, L. Mariucci, G. Fortunato, Modelling Velocity Saturation Effects in Polysilicon Thin­Film Transistors, Jpn. Journ. of Appl. Phys., 45, 4374 (2006)
11) M. Cuscunà, L. Mariucci, G. Fortunato, A. Bonfiglietti, A. Pecora and A. Valletta, Improved electrical stability in asymmetric fingered polysilicon Thin Film Transistors,
Appl. Phys. Lett., 89, 123506 (2006)
12) A. Valletta, A. Moroni, L. Mariucci, A. Bonfiglietti, and G. Fortunato, Self­heating effects in polycrystalline silicon thin film transistors, Appl. Phys. Lett., 89, 093509 (2006)
13) A. Pecora, L. Maiolo, G. Fortunato, C. Caligiore, A comparative analysis of silicon dioxide films deposited by ECR­PECVD, TEOS­PECVD and Vapox­APCVD, Journ. of
Non­Cryst. Solids, 352, 1430 (2006)
14) L. Maiolo, A. Pecora, and G. Fortunato N. D. Young, Low­temperature electron cyclotron resonance plasma­enhanced chemical­vapor deposition silicon dioxide
as gate insulator for polycrystalline silicon thin­film transistors, J. Vac. Sci. Technol. A 24, 280 (2006)
15) L. Mariucci, A. Valletta, P. Gaucci, and G. Fortunato, Hot carrier effects in p­channel polycrystalline silicon thin film transistors, Appl. Phys. Lett., 89, 183518 (2006)
16) V. Privitera, P. Alippi, M. Camalleri, M. Cuscunà, G. Fortunato, A. La Magna, G. La Rosa, A. Magrì, L. Mariucci, E. Monakhov, D. Salinas, F. Simon, C. Spinella, B. G.
Svensson, Perspectives and advantages of the use of excimer laser annealing for MOS technology, Nuovo Cimento C, 29, 369 (2006)
17) G. Fortunato, L. Mariucci and M. Cuscunà V. Privitera, A. La Magna, C. Spinella, Magr, M. Camalleri and D. Salinas, F. Simon, B. Svensson and E. Monakhov,
Advanced gate stack architecture for excimer laser annealing integration in power MOS fabrication, Appl. Phys. Lett., 89, 253502 (2006)
18) L. Romano, A.M. Piro , V. Privitera , E. Rimini , G. Fortunato, B.G. Svensson , M. Foad, M.G. Grimaldi, Mechanism of de­activation and clustering of B in Si at extremely
high concentration, Nuclear Instruments and Methods in Physics Research B 253, 5054 (2006)
19) A. La Magna, P. Alippi, I. Deretzis, V. Privitera,G. Fortunato, L. Mariucci, A. Magrì, E. Monakhov, B. Svensson, Ultra­shallow junction by laser annealing: Integration
issues and modelling, Nuclear Instruments and Methods in Physics Research B 253, 1 (2006)
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Publications ­ 2005
Riviste JCR
1) G. Mannino,V. Privitera, A. La Magna, and E. Rimini, E. Napoletani, G. Fortunato and L. Mariucci, Depth distribution of B implanted in Si after excimer laser irradiation,
Appl. Phys. Lett., vol. 86, 051909 (2005)
2) A. Pecora, L. Maiolo, A. Bonfiglietti, M. Cuscunà, F. Mecarini, L. Mariucci, G. Fortunato and N. D. Young, “Silicon dioxide deposite d by ECR­PECVD for low­
temperature Si devices”, Microelectronics reliability, vol. 45, p. 879­882 (2005)
3) A. Valletta, L. Mariucci, A. Bonfiglietti,G. Fortunato, S. Brotherton, “Dopant and defect interactions in polycrystalline silicon thin­film transistors”, J. Appl. Phys. vol 97, p.
104515 (2005)
4) A. Di Gaspare, L. Mariucci, A. Pecora and G. Fortunato, “Stable p­channel polysilicon TFTs fabricated by laser doping technique” , Thin Solid Film, vol. 487, pp. 232­
236 (2005)
5) A Valletta, L Mariucci, A Bonfiglieti, G Fortunato, S D Brotherton, “Channel Doping Effects in poly­Si TFTs”, Thin Solid Film, vol. 487, pp. 242­246 (2005)
6) G. Fortunato, A. Valletta, P. Gaucci, L. Mariucci, and S. D. Brotherton, “Short channel effects in polysilicon TFTs”, Thin Solid Film, vol. 487, pp. 221­226 (2005)
7) M. Cuscunà, L. Mariucci, G. Fortunato, A. Bonfiglietti, A. Pecora and A. Valletta, “Improved electrical stability in asymmetric fingered polysilicon Thin Film Transistors”,
Thin Solid Film, vol. 487, pp. 237­241 (2005)
8) E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, C. Spinella, C. Bongiorno, V. Privitera, G. Fortunato, and L. Mariucci, “Enhanced boron diffusion in
excimer laser preannealed Si”, Appl. Phys. Lett. 86, 151902 (2005)
9) F. De Angelis, S. Cipolloni, L. Mariucci and G. Fortunato, “High field effect mobility Pentacene Thin Film Transistors with Polymethylmetacrylate buffer layer”, Appl.
Phys. Lett., vol. 86, p.203505 (2005)
10) E. V. Monakhov and B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, and V. Privitera, G. Fortunato, M. Cuscunà, and L. Mariucci, “Boron distribution in silicon
after multiple pulse excimer laser annealing”, Appl. Phys. Lett., vol. 86, p. 081901 (2005)
11) A. Bonfiglietti, A. Valletta, P. Gaucci, L. Mariucci, and G. Fortunato, S. D. Brotherton, “Electrical characterization of directionally solidified polycrystalline silicon”, J.
Appl. Phys. vol 98, p. 033702 (2005)
12) E. V. Monakhov_ and B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, and V. Privitera, G. Fortunato, M. Cuscunà, and L. Mariucci, “The effect of excimer
laser pretreatment on diffusion and activation of boron implanted in silicon”, Appl. Phys. Lett., vol. 87, 192109 (2005)
13) E.V. Monakhov, B.G. Svensson, M.K. Linnarsson, A. La Magna, M. Italia, V. Privitera, G. Fortunato, M. Cuscunà, L. Mariucci, “Excimer laser annealing of B and BF2
implanted Si”, Materials Science and Engineering B, vol. 124–125 p. 232–234 (2005)
14) E.V. Monakhov, B.G. Svensson, M.K. Linnarsson, A. La Magna, M. Italia,V. Privitera, G. Fortunato, M. Cuscunà, L. Mariucci, “Boron distribution in silicon after excimer
laser annealing with multiple pulses”, Materials Science and Engineering B, vol. 124–125 p. 228–231 (2005)
15) A. La Magna, P. Alippi, V. Privitera and G. Fortunato, “Role of light scattering in excimer laser annealing of Si”, Appl. Phys. Lett., 86, 161905 (2005)
16) Sean Whelan, Michael J. Kelly, John Yan and Guglielmo Fortunato, “Radiation damage annealing (thermal and laser) in Mg implanted GaN”, Phys. Stat. Sol. (c) 2,
No. 7, 2472–2475 (2005)
Consiglio Nazionale delle Ricerche
Institute for Microelectronics and Microsystems – Rome
Staff
Name
Position
Tel.
E­mail
Guglielmo Fortunato
Senior Researcher
06.4993.4594
[email protected]
Luigi Mariucci
Researcher
06.4993.4706
[email protected]
Alessandro Pecora
Researcher
06.4993.4064
[email protected]
Antonio Valletta
Researcher
06.4993.4541
[email protected]
Massimo Cuscunà
Researcher
06.4993.4580
[email protected]
Antonio Minotti
Technician
06.4993.4064
[email protected]
Daniela Simeone
Post Doctoral
Fellowship
06.4993.4492
[email protected]
Luca Maiolo
PhD Student
06.4993.4064
[email protected]
Paolo Gaucci
PhD Student
06.4993.4580
[email protected]
Matteo Rapisarda
PhD Student
06.4993.4580
[email protected]