PHOTODIODE
Si PIN photodiode
S4349
Quadrant Si PIN photodiode
S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing
such as for laser beam axis alignment.
Features
Applications
l Quadrant (2 × 2) element format
l Low cross-talk: 2 % Max.
l Wide spectral response range: 190 to 1000 nm
l High-speed response: fc=20 MHz
l TO-5 metal package
l Laser beam axis alignment
l Position sensing
■ General ratings
Parameter
Window material
Active area
Element gap
Symbol
A
-
Value
Quartz glass
o 3.0/4 element
100
Unit
mm
µm
Value
20
-20 to +60
-55 to +80
Unit
V
°C
°C
■ Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
■ Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp
Photo sensitivity
S
λ=λp
Dark current
ID
VR=5 V
Temperature coefficient of ID
TCID
VR=5 V, RL=50 Ω
Cut-off frequency
fc
λ=780 nm, -3 dB
Terminal capacitance
Ct
VR=5 V, f=1 MHz
Noise equivalent power
NEP
VR=5 V, λ=λp
Cross-talk
CL
VR=5 V, λ=780 nm
Typ.
190 to 1000
720
0.45
0.01
1.12
Max.
0.2
-
Unit
nm
nm
A/W
nA
times/°C
20
-
MHz
25
4.0 × 10-15
-
2
pF
W/Hz1/2
%
1
Si PIN photodiode
■ Photo sensitivity temperature characteristic
■ Spectral response
(Typ. Ta=25 ˚C)
PHOTO SENSITIVITY (A/W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
400
600
800
(Typ.)
+1.5
TEMPERATURE COEFFICIENT (%/˚C)
0.8
0
190
+1.0
+0.5
0
-0.5
190
1000
400
600
800
1000
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0126EA
(Typ. Ta=25 ˚C)
1 nA
TERMINAL CAPACITANCE
10 pA
1 pA
100 fA
0.1
1
10
(Typ. Ta=25 ˚C, f=1 MHz)
1 nF
100 pA
DARK CURRENT
KMPDB0127EA
■ Terminal capacitance vs. reverse voltage
■ Dark current vs. reverse voltage
10 fA
0.01
S4349
100 pF
10 pF
1 pF
100 fF
0.1
100
1
10
100
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KMPDB0128EA
KMPDB0129EA
■ Dimensional outline (unit: mm)
9.2 ± 0.2
8.1 ± 0.2
d
b
c
0.1
4.1 ± 0.2
ACTIVE AREA
DETAILS OF
PHOTODIODE
13.5
2.95
PHOTOSENSITIVE
SURFACE
0.1
a
3.0
WINDOW
5.9 ± 0.1
0.45
LEAD
5.08 ± 0.2
ANODE d
ANODE a
CATHODE (CASE)
ANODE b
ANODE c
CATHODE (CASE)
NC
KMPDA0114EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KMPD1007E02
Aug. 2006 DN