FP7-ICT-2007-2 HELIOS Large-scale Integrating Project
Large-scale integrating project (IP)
ICT Call 2
FP7-ICT-2007-2
pHotonics ELectronics functional Integration on CMOS
HELIOS
Date of preparation: 09.10.2007
Type of funding scheme: Large-scale integrating project (IP)
Work programme topics addressed: ICT-2007.3.5: Photonic components and subsystems
Name of the coordinating person: Laurent Fulbert
e-mail: [email protected]
• Objectives: to build a complete design and fabrication chain
enabling the integration of a photonic layer with a CMOS circuit,
using microelectronics fabrication processes. It will make
accessible integration technologies for a broad circle of users in a
foundry-like, fabless way
Different activities:
– Developing the whole “food chain”
• high performance generic building blocks
• photonics/electronics convergence at the
process level and design level
– Demonstrating the power of this approach
through demonstrators addressing different
industrial needs
– Preparing the future by exploring
alternative approaches that offer clear
advantages in terms of integration on
CMOS.
WP10:
WP8:
Modulator
demonstrator
WP9:
Transceiver
demonstrator
Photonic QAM
Wireless
transmission
demonstrator
proof of concept
WP12: training and dissemination
WP7: integration with CMOS
WP11: innovative
WP6: packaging
and exploitation
WP5: photodetection
WP4: passive circuitry
WP2: source
WP3: modulator
WP1 : Roadmapping
WP0 : Project management
•
WP11: INNOVATIVE PROOF OF CONCEPTS (CNRS)
Task 11.1 Amorphous Si modulator (IMM)
Exploit amorphous silicon (a-Si:H) as a material to form a modulator to be
fabricated at the end of the CMOS process.
We plan to design, fabricate and characterise field-effect driven elements.
The proposed basic technology is shown, with possible changes in the cladding
layer. The proposed stacked modulator scheme highly enhances the electro-optical
effects in the region where they are more effective on the propagating beam.
-Task 11.2: Silicon nanocrystals for light emission and amplification
(UNITN)
Realize an injection silicon laser based on active Er impurities which are excited via
electrical injection into Si-nc embedded in a dielectric (oxide, nitride)
1. LED with Si-nc emitting at 0.75 μm with EQE of about 1% and a turn on voltage of
less than 5V
2. LED with Er coupled to Si-nc emitting at 1.55 μm with same EQE and turn on
voltage
3. Waveguide amplifiers with Er coupled to Si-nc, electrically driven and having a
gain of 10 dB
4. Injection silicon laser emitting at 1.55 μm
Task 11.3 Novel concepts of heterogeneous integration (CNRS)
This task will concentrate on the development of an
technological/conceptual scheme for 3D microphotonics
based on III-V/Silicon heterogeneous integration and
photonics and opens the way to far larger functionality
potential impact than in the version of INTEL/PICMOS
innovative
on CMOS
diffractive
and wider
IMM funding:
Uni-RC
IMM-BO
IMM-Na
Project duration: 48 months
RTD (A) [75%]: personnel, other direct costs [project specific materials needed for cleanroom, silicon
substrates, process gases, chemicals, targets, consumables for polishing: 30k€;
parts needed for
demonstrators (photomasks, fibers, glues): 5 k€; travels: 10k€]
OTHER (D) [100%]: networking, organisation, dissemination (publications, participation to seminars,
training)
(indirect costs: 86,96% of personnel cost)
1.5 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
Tre strati
Barriera: aSiCN 29 nm
Cladding: nitruro
6 strati SOTTILE:
guide 0.2 micron, totale 1.2 micron
Barriera: aSiCN 38 nm
Cladding: nitruro
Ultima barriera: aSiCN
1 micron
1 micron
1 micron
1 micron
2 strati, ultra SOTTILE:
guide 0.125 micron, totale 0.25
micron
Barriera: aSiCN 40 nm
Cladding: nitruro
Ultima barriera: aSiCN
‘simmetrico’
Barriera: aSiCN 30 nm
Cladding: nitruro
1 micron
ZnO
1 micron
1 micron
1 micron
3 strati
Barriera: aSiCN 30 nm
Cladding: nitruro
Ultima barriera: aSiCN
c-Si tipo p
c-Si tipo n
0.5 micron
0.5 micron
0.5 micron
0.5 micron
0.5 micron
0.5 micron
6 strati
Barriera: aSiCN 38 nm
Cladding: nitruro
Ultima barriera: aSiCN
ZnO
c-Si tipo p
c-Si tipo n
5 strati DROGATO:
guide 0.25 micron,
totale 1.25 micron
Barriera: aSiC 40 nm
Cladding: 1.1 micron SiO2
Ultima barriera: SI
Contatto ZnO
5 strati intrinseco in
MDZ3:
guide 0.25 micron,
totale 1.25 micron
Barriera: aSiC 40 nm
Cladding: 1.1 micron SiO2
Ultima barriera: SI
Contatto ZnO
Segnale
elettrico
modulante
Segnale
ottico in
uscita dalla
guida
6 strati SOTTILE:
guide 0.2 micron, totale 1.2 micron
Barriera: aSiCN 38 nm
Cladding: nitruro
Ultima barriera: aSiCN
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
ZnO
amorphous silicon
ITO
SOG on ITO
amorphous silicon on SOG on ITO
amorphous silicon on ITO
height (nm)
240
160
80
0
30
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
ITO
40
50
m
60
70
80
R (%)
14167 a-Si:H
1.204m SiO2
R (%)
265 nm roughness
16211 A a-Si:H
663 A ITO2
3120 A SiO2
amorphous silicon
ITO
SOG on ITO
amorphous silicon on SOG on ITO
amorphous silicon on ITO
height (nm)
240
160
80
0
30
40
0.2 micron
0.2 micron
0.2 micron
0.2 micron
0.2 micron
Spin-on-Glass
ITO
50
m
60
70
80
EXPERIMENTAL ACTIVITY
The following activities were performed
• study and optimisation of the films:
a-Si:H, SixN1-x, a-SiC:H, a-SiCN films deposited and characterised,
each in different stoichiometric compositions
outcome: a-SiC:H will be used as insulator in future devices
1E-3
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
1E-10
1E-11
1E-12
1E-13
1E-14
1E-15
1E-16
1E-17
1E-18
1E-19
optical characterisation
3.0
2.5
2.0
n,k
I/E (A cm /V)
electrical characterisation
K737 - a-SiCN:H standard
K734 - a-SiCN:H, low Si content
K733 - a-SiCN:H, low Si content, low T
K735 - a-SiCN:H, Si/C ratio as for K734
K736- a-SiC:H "stechio"
K738- a-SiC:H"stechio" H-diluted in the plasma
K536 - a-SiCN:H, OLD DATA
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
1.5
K737 - Carbonitruro standard
K734 - Carbonitruro (poco silicio)
K733 - Carbonitruro (poco silicio) bassa T
K735 - Carburo con rapporto Si/C come K734
K736 - Carburo "stechio"
K738 - Carburo "stechio" diluito
1.0
0.5
0.0
400
600
dot
Wavelength (nm)
800
• speed issues
speed depends on =RC, where
R  resistivity of a-Si:H
1
t
C  SiC ,  SiC
t
 doping has a key role
SiC
log(electron, cm-3)
 a  Si  8 10 3
 a  Si  10 3
 a  Si  10 4
 a  Si  10 11  1cm 1
(undoped)
log (time,s)
simulated elec. conc. vs. time at
the internal a-Si:H/insulator
interfaces for different
conductivities of a-Si:H
Drogaggio
Aumenta la velocità
Aumenta l’assorbimento
80 sccm SiH4
0.9 sccm PH3
Ea = 0.16 eV
D = 5.6 E-3 ( cm)-1
Simulazione nir:
F=30°
KIR inferiore a 0.001
Misure
ellissometro su
modulatore
polarizzato
V
aumenta
Red shift:
aumenta nd
Wavelength (nm)
Meeting annuale: 16 giugno GRAZ