Lucia Romano Department of Physics and Astronomy University of Catania 64 via S. Sofia 95123 Catania, Italy Office: +39 095 378 5440 Mobile: +39 3337249325 email: [email protected] Curriculum vitae Actual position Assistant professor (November 2008 – to date) Department of Physics and Astronomy, University of Catania. Leader (Workpackage #2) in EU project WATER (October 2012 – March 2016) WATER: Winning applications of nanotechnology for resolutive hydropurification Project type: Coordination and support action Funding scheme: Seventh framework programme REGPOT‐2012‐2013‐1 WP#2: Reinforcement of human and technical capital http://www.water.imm.cnr.it Research Expertise Background  Semiconductors physics (doping; electrical, structural, morphological and optical properties; defects engineering, photocatalysis)  Ion beam material modification (ion implantation, damaging, channeling, defects diffusion and clustering, nanostructuring, ion beam milling)  Nanomaterial synthesis (thermal processes: semiconductor nanowires by VLS, oxides nanowires by VS, metallic nanostructures by dewetting; ion beam synthesis: porous Ge, nanospikes by swift heavy ions; chemical synthesis: TiO2 nanotubes by anodization, polymeric nanocomposites, hydrothermal growth of TiO2 nanostructures, atomic layer deposition, anysotropical etching, lithography) Experimental experience  Ion Beam analyses and processing (RBS‐channeling, ERDA, nuclear reaction analyses, PIXE, FIB, SIMS, Ion Implantation, Deep reactive ion etching,). Manager of Ion beam lab (Dep. Physics, University of Catania).  Material deposition and processing (Sputtering, MBE, CVD, ALD, conventional thermal processing, laser ablation and annealing, hydrothermal synthesis, metal anodization, polymer casting).  Microscopy (SEM, TEM, AFM, STM, FIB, Local electrode atom probe).  Electrical characterization (low temperature Van der Pauw and Hall effect, Spreading resistance profiling)  Optical characterization (in‐situ time resolved reflectivity, photocatalytic activity by azo‐dye degradation, UV‐VIS spectrophotometry, XRD, Raman spectroscopy, spectroscopic ellipsometry) Educational Background Qualified for Associate professor (December 2013)  DD n. 222/2012 ANVUR (National Scientific Qualification for University and Research), Italy Sector: 02/B1 (Experimental Physics of Matter) Qualification valid until Dec 2017 Post‐doc University of Florida (March 2007 – November 2008)  Department of Material Science and Engineering http://www.mse.ufl.edu/ Theme of research: “Research and Development of the LEAP: a semiconductor application” Advisor: Prof. K.S. Jones. 1/6 Ph.D. in Physics (January 2006)  summa cum laude, University of Catania, Italy Dissertation: “Heavily doped Si with B and Ga: electrical properties and clustering” Advisor: Prof. Maria Grazia Grimaldi Master Degree in Physics (December 2001)  with final mark 110/110 summa cum laude, University of Catania, Italy Dissertation: “Electrical characterization of boron doped Si1‐xGex alloys” Advisor: Prof. Maria Grazia Grimaldi General Certificate of Education (June 1996)  with final mark 60/60 summa cum laude, Scientific Liceo "Leonardo Da Vinci", Floridia (Siracusa), Italy In the research team of:  2012‐2015 ARC discovery project (DP120103198) “Understanding the structure and unusual properties of ion implanted amorphous germanium”, coordinator Prof. J. Williams (Australian National University)  2012‐2015 MIUR‐PON02_00355_3391233 ENERGETIC “Tecnologie per l'ENERGia e l'Efficienza enrgETICa” (University of Catania)  2012‐2014 MIUR‐PON02_00355_3416798 PLAST_ICs “Elettronica su Plastica per Sistemi ‘Smart disposable” (CNR)  2012‐2015 PON project “Formazione di tecnologi esperti nella progettazione e realizzazione di celle solari ed impianti di conversione e distribuzione dell’energia ad alta efficienza” (University of Catania)  2011‐2014 MIUR‐PONa3_00136 BRIT “Bio‐nanotech Research and Innovation Tower” (University of Catania)  2009 “Local electrode atom probe” (DURIP), coordinator Prof. K.S. Jones (University of Florida);  2009‐2014 “A 21St Century approach to Electronic Device Reliability” (MURI), coordinator Prof. M. Law (University of Florida).  2009‐2010 “Understanding the Limits of LEAP in characterizing Dopants in Si and SiGe Nanostructures” (SRC); “Process Modeling for Ge Device Structures” (SRC), coordinator Prof. K.S. Jones (University of Florida);  2007‐2008 “TED and B clustering: the role of the surface recombination studied by LEAP microscopy in B doped Si nanowires” (CINT Los Alamos National Laboratory) coordinators Lucia Romano (University of Florida) and Dr. T. Picraux (CINT);  2005‐2007 Colaboration project with ST‐Microelectronics “Studio di Materiali tramite l’utilizzo di fasci ionici”, coordinator Prof. M.G. Grimaldi (University of Catania).  2004‐2006 MIUR ‐ PRIN: “Materiali e processi per dispositivi C‐MOS con gate di Silicio strained”, coordinator Prof. A. Carnera (University of Padova).  2002‐2004 MIUR ‐ PRIN: “Studio del regime di alta concentrazione di drogante in strati sottili di Si e leghe a base di Si”, coordinator Prof. A. Carnera (University of Padova).  2000‐2003 MURST: "Preparazione, caratterizzazione e sviluppo di tecnologie per l’utilizzo industriale di materiali innovativi”, Murst, Cluster 26, coordinator Prof. O. Puglisi (University of Catania). Teaching Experience Classes at the Department of Physics, University of Catania  Laboratory of Nanostructures (2010 to date)  Photonics and Nanotechnology (2009 to date)  Exercises of General Physics 1 (2009 to date)  Laboratory of General Physics 1 (2008‐2010)  Laboratory of Physics for Environmental Science (2008‐2009) Lectures for PhD programs, University of Catania  Laboratory of Ion beam material modification (45 hours, PON01_01725, 2013)  Metallic nanostructures (12 hours, PON01_01725, 2013)  Nanostructure metrology (25 hours, BRITT, 2014) Training courses of experimental techniques (RBS, PIXE, ERDA, SEM, EDX, FIB, Electrical characterization, Ion implantation, furnace processing) for researchers of CNR and of University of Catania. Tutor at University of Catania since 2006 to date of 8 students (first degree in Physics), 8 students (master degree in Physics), 1 PhD student in Materials Science. Committee member of the PhD school of Materials Science and Technology, University of Catania (2010 to date) Committee member for final exams of Master degree and First degree in Physics, University of Catania (2010 to date) 2/6 Reach‐out activities  Program chair of the international IEEE conference “Nanotechnology Materials and Devices Conference” 2014 (Catania, Italy)  “Nanergame” organizer, public contest for videogames based on nanotechnology for water treatment (June 28, 2013), awarded at EMRS 2014 in the reach‐out competition.  Workshop organizer, "WATER: Research and Industry towards Europe" (April 5, 2013).  Lecture “Pure water: a new challenge for nanotechnology” in the occasion of World Water Day (March 22, 2013), a public conference for a broad target to promote the launch of WATER on social channels (Facebook, Twitter).  Workshop organizer, “HORIZON 2020: Outlook and Opportunity” (January 25, 2013).  Coordinator of the Laboratory of Nanotechnology for the “Progetto Lauree Scientifiche” and the “Scientific Week”, the Italian MIUR initiatives to promote the scientific education in the high school (2010 to date).  SEM picture of Lucia Romano “Dark night at desert” was published in the section image in focus of Materials360 vol.10, issue 17, September 2010; SEM picture of Lucia Romano has been selected for the cover page of the printed journal Nanotechnology, 23 (2012).  Materials Science Lab tour guiding for high school classes (2003 to date).  Art designer and Editor of the MATIS research group web site http://www.matis.imm.cnr.it and the new one http://www.dfa.unict.it/matis  Local organizers committee of Ion Beam Modification of Materials conference 2006, Taormina (Italy); Staff of the First CADRES workshop 2004, Acireale (Catania, Italy); Staff of the Gettering And Defect Engineering In Semiconductor Technology, International Autumn Meeting 2001, S. Tecla (Catania, Italy)  Referee experience: Editorial Board of the proceedings of the IBMM conference 2006, volume of Nuclear Instruments and Methods B, Nuclear Instruments and Methods B, Materials Science and Engineering B, Applied Physics Letters, Journal of Applied Physics, Physics Review B, Nanotechnology, Applied Physics A, Electrochemical and Solid‐State Letters Presentations at conferences  “Swift heavy ion beam modification of rutile TiO2 for photo‐catalysis applications” (oral). EMRS Spring Meeting, Lille (France), 2014  “Semiconductor metal oxides nanostructures for water applications” (Invited talk), ICONN 2014 (Adelaide, Australia).  “Self ion induced nanostructures in Ge thin films” (oral), EMRS Spring Meeting, Nice (France), 2011.  “Ion induced honeycomb Ge: structural and electrical properties” (poster).17th International Conference on Ion Beam Modification of Materials, Montreal (Canada), 2010.  “Self‐ion‐induced nanostructures in Ge” (oral). Materials Research Society Fall Meeting, Boston, (Ma, USA), 2009.  “Manipulation and deformation of Ge nanowires by ion‐irradiation” (first author). Materials Research Society Spring Meeting, San Francisco (Ca, USA), 2009.  “Physical insight into the phenomenon of B clustering in Si at room temperature” (Invited talk), 15th International Conference on Ion Beam Modification of Materials, Taormina (Italy), 2006  “De‐activation and clustering of B in Si at extremely high concentration” (oral), 16th International Conference on Ion Implantation Technology, Marseille (France), 2006  “Effect of strain on the carrier mobility in heavily doped p‐type Si” (oral), European Materials Research Society Spring Meeting, Nice (France), 2006  “De‐activation and clustering of B in Si at extremely high concentration” (oral), European Materials Research Society Spring Meeting, Nice (France), 2006  “B clustering formation at room temperature” (oral), European Materials Research Society Spring Meeting, Nice (France), 2006  “Strain effect on Carrier Mobility in Si highly doped with B and Ga” (oral), XCI Congresso nazionale della Società Italiana di Fisica, Catania (Italy), 2006  “Formation And Dissolution of B clusters in ion implanted material” (oral), European Materials Research Society Spring Meeting, Strasbourg (France), 2005  “High concentration Si doping with group III impurities: electrical activation, stability and clustering” (oral)  “Electrical properties of B and Ga co‐doped Si” (poster), European Materials Research Society Spring Meeting, Strasbourg (France), 2005  “Room‐temperature B off‐lattice displacement and electrical deactivation induced by H and He implantation” (poster), 17th International Conference on Ion Beam Analyses, Sevilla (Spain), 2005 3/6 
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“Group III impurities ‐ Si interstitials interaction during ion irradiation” (oral), First CADRES workshop, Acireale (Catania, Italy), 2004 “Group III impurities ‐ Si interstitials interaction during ion irradiation” (oral), 14th International Conference on Ion Beam Modification of Materials, Monterey‐Ca (USA), 2004 “Electrical activation and Lattice Location of B and Ga Impurities implanted in Si” (poster), 16th International Conference on Ion Beam Analyses, Albuquerque (New Mexico, USA), 2003 “Carrier concentration and mobility in B doped Si1‐xGex” (oral), European Materials Research Society Spring Meeting, Strasbourg (France), 2002 “Carrier concentration and mobility in B doped Si1‐xGex“ (poster), III Silicon Workshop, Istituto Nazionale per la Fisica della Materia (INFM), Genova (Italy), 2002 Awards and fellowships  Reach out competition award, European Materials Research Society Spring Meeting 2014  Young Scientist Award at the European Materials Research Society Spring Meeting 2002  3 years fellowship for the Ph.D, University of Catania (Italy), 2003 ‐ 2005  4 grants for meritorious undergraduate students, University of Catania (Italy), 1997‐2000  2 state grants for meritorious high school students (Italy), 1997 Publications R. Sanz, L. Romano, M. Zimbone, M. A. Buccheri, V. Scuderi, G. Impellizzeri, M. Scuderi, G. Nicotra, J. Jensen and V. Privitera, UV‐
Black rutile TiO2: an antireflective photocatalytic nanostructured surface, Nanoscale (submitted) V. Scuderi, G. Impellizzeri, L. Romano, M. Scuderi, M.V. Brundo, K. Bergum, M. Zimbone, R. Sanz, M.A. Buccheri, F. Simone, G. Nicotra, B.G. Svensson, M.G. Grimaldi, and V. Privitera, Enhanced photocatalytic response of nanometric TiO2 wrapping Au nanoparticles for eco‐friendly water applications, Nanoscale (2014, in press) Chennupati Jagadish, Vittorio Privitera and Lucia Romano, Semiconductors and Semimetals: Defects in Semiconductors book editors, Elsevier (2015, in press). Daniela Cavalcoli, Beatrice Fraboni, G. Impellizzeri, L. Romano, Erika Scavetta and M. G. Grimaldi. Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy, Microporous and Mesoporous Materials, 196, 175 (2014). A. Gentile, F. Ruffino, L. Romano, S. Boninelli, R. Reitano, G. Piccitto, M.G. Grimaldi, Structural and optical properties of solid‐state synthesized Au dendritic structures, Appl. Sur. Sci., 296, 177 (2014). Y. Xu, B. Spataro, S. Sarti, V. A.Dolgashev, S. Tantawi, A. D.Yeremian, Y. Higashi, M.G. Grimaldi, L. Romano, F. Ruffino, R. Parodi, C. Caliendo, A. Notargiacomo, G. Cibin, A. Marcelli, Structural and morphological characterization of Mo coatings for high gradient accelerating structures, Journal of Physics: Conference Series, 430, 012091 (2013). E. Scavetta, A. Mignani, D. Tonelli, G. Impellizzeri, L. Romano, C. Bongiorno, B. Fraboni, M.G. Grimaldi, Nanoporous Ge coated by Au nanoparticles for electrochemical application, Electrochemistry Communications, 30, 83 (2013). S. Bini, V. Chimenti, A. Marcelli, L. Palumbo, B. Spataro, V. A. Dolgashev, S. Tantawi, A. D. Yeremian, Y. Higashi, M. G. Grimaldi, L. Romano, F. Ruffino, R. Parodi, "Molybdenum sputtering film characterization for high gradient accelerating structures", Chinese Physics C, 37, 097005 (2013). L. Romano, G. Impellizzeri and M. G. Grimaldi, Influence of microstructure on voids nucleation in nanoporous Ge, Materials Letters, 96, 74 (2013). B. R. Yates, B. L. Darby, D. H. Petersen, O. Hansen, R. Lin, P. F.Nielsen, L. Romano, B. L. Doyle,A. Kontos, K.S. Jones, Activation and thermal stability of ultra‐shallow B+‐implants in Ge, J. Appl. Phys., 112, 123525 (2012). L. Romano, G. Impellizzeri and M. G. Grimaldi, p‐type conduction in ion‐implanted amorphized Ge, Materials Science in Semiconductor Processing, 15, 703 (2012). G. Impellizzeri, L. Romano, B. Fraboni, E. Scavetta, F. Ruffino, C. Bongiorno, V. Privitera, M.G. Grimaldi, Nanoporous Ge electrode as a template for nano‐sized (< 5 nm) Au aggregates, Nanotechnology, 23, 395604 (2012). S. Bini, V. Chimenti, A. Marcelli, L. Palumbo, B. Spataro, V. A. Dolgashev, S. Tantawi, A. D. Yeremian, Y. Higashi, M. G. Grimaldi, L. Romano, F. Ruffino, R. Parodi, Development of X‐band accelerating structures for high gradients, Chinese Physics C, 36, 639 (2012). L. Romano, G. Impellizzeri, L. Bosco, F. Ruffino, M. Miritello and M. G. Grimaldi, Nanoporosity induced by ion implantation in deposited amorphous Ge thin films, J. Appl. Phys., 111, 113515 (2012). G. Impellizzeri, L. Romano, L. Bosco, C. Spinella and M. G. Grimaldi, Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy, Applied Physics Express, 5, 035201 (2012). F. Ruffino, L. Romano, E. Carria, M. Miritello, M.G. Grimaldi, V. Privitera, F. Marabelli, A combined ion implantation/nanosecond laser irradiation approach towards Si nanostructures doping, Journal of Nanotechnology, 2012, 635705 (2012). F. Ruffino, L. Romano, G. Pitruzzello and M. G. Grimaldi, High‐temperature annealing of thin Au films on Si: Growth of SiO2 nanowires or Au dendritic nanostructures?, Appl. Phys. Lett., 100, 053102 (2012). F. Ruffino, A. Pugliara, E. Carria, L. Romano, C. Bongiorno, G. Fisicaro, A. La Magna, C. Spinella, M.G. Grimaldi, Towards a laser fluence dependent nanostructuring of thin Au films on Si by nanosecond laser irradiation, Appl. Sur. Sci., 258, 9128 (2012). 1.
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4/6 19. F. Ruffino, A. Pugliara, E. Carria, L. Romano, C. Bongiorno, C. Spinella, M. G. Grimaldi, Novel approach to the fabrication of Au/silica core–shell nanostructures based on nanosecond laser irradiation of thin Au films on Si, Nanotechnology, 23, 045601 (2012). 20. S. Bini, V. Chimenti, A. Marcelli, L. Palumbo, B. Spataro, V. A. Dolgashev, S. Tantawi, A. D. Yeremian, Y. Higashi, M. G. Grimaldi, L. Romano, F. Ruffino, R. Parodi, Development of X‐band accelerating structures for high gradients, SPARC‐RF‐11/04 May 30, 2011 1‐
16 (2011). 21. E. F. Pecora, A. Irrera, S. Boninelli, L. Romano, C. Spinella, F. Priolo, Nanoscale amorphization, bending and recrystallization in silicon nanowires, Appl. Phys. A 102, 13 (2011). 22. E. Bruno, G. G. Scapellato, G. Bisognin, E. Carria, L. Romano, A. Carnera, F. Priolo, High‐level incorporation of antimony in germanium by laser annealing, J. Appl. Phys. 108 ,124902 (2010). 23. L. Romano, G. Impellizzeri, M. Tomasello, F. Giannazzo, C. Spinella, M.G. Grimaldi, Nanostructuring in Ge by self‐ion implantation, J. Appl. Phys. 107, 084314 (2010). 24. L. Romano, A.M. Piro, S. Mirabella, M.G. Grimaldi, Formation and evolution of small B clusters in Si: ion channeling study, Phys. Rev. B 81, 075210 (2010). 25. L. Romano, N.G. Rudawski, M.R. Holzworth, K.S. Jones, S.G. Choi, S.T. Picraux, Nanoscale manipulation of Ge nanowires by ion irradiation, J. Appl. Phys. 106, 114316 (2009). 26. L. Romano, K.S. Jones, K. Sekar, W.A. Krull, Amorphization of Si using Cluster Ions, J. Vac. Sci. Technol. B 27, 597 (2009). 27. D. D’Angelo, L. Romano, I. Crupi, E. Carria, V. Privitera, M.G. Grimaldi, Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films, Appl. Phys. Lett., 93, 231901(2008). 28. K.S. Jones, L. Romano, N. G. Rudawski, J. Gyulai, and P. Petrik, “Radiation Damage Of Silicon” Chapter 10 in Ion Implantation ‐ Science and Technology, 2008 Edition, IIT Press (2008). 29. K.S. Jones, N. G. Rudawski, L. Romano, and J. Gyulai, “Annealing of Radiation Damage in Silicon” Chapter 11 in Ion Implantation ‐ Science and Technology, 2008 Edition, IIT Press (2008). 30. G. Bisognin, D. De Salvador, E. Napolitani, A. Carnera, E. Bruno, S. Mirabella, A.M. Piro, L. Romano and M.G. Grimaldi, In situ thermal evolution of B–B pairs in crystalline Si: a spectroscopic high resolution x‐ray diffraction study, J. Phys.: Condens. Matter 20, 175215 (2008). 31. F. Giannazzo, F. Iucolano, F. Roccaforte, L. Romano, M.G. Grimaldi, V. Raineri, Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopi, Solid State Phenomena 131‐133, 491 (2008). 32. G. Bisognin, D. De Salvador, E. Napoletani, M. Berti, A. Carnera, S. Mirabella, L. Romano, M. G. Grimaldi and F. Priolo, Substitutional B in Si: accurate lattice parameter determination, J. Appl. Phys. 101, 093523 (2007). 33. L. Romano, A.M. Piro, S. Mirabella, M.G. Grimaldi, Physical insight into the phenomenon of B clustering in Si at room temperature, Nuclear Instruments and Methods B 257, 146 (2007). 34. D. D’Angelo, A.M. Piro, S. Mirabella, C. Bongiorno, L. Romano, A. Terrasi and M.G. Grimaldi, Amorphous‐Crystalline interface evolution during Solid Phase Epitaxy Re‐growth of SiGe films amorphized by ion implantation, Nuclear Instruments and Methods B 257, 270 (2007). 35. F. Iucolano, F. Giannazzo, F. Roccaforte, L. Romano, M.G. Grimaldi, V. Raineri, Quantitative determination of depth carrier profiles in ion‐implanted Gallium Nitride, Nuclear Instruments and Methods B 257, 336 (2007). 36. L. Romano, A.M. Piro, V. Privitera, E. Rimini, G. Fortunato, B. G. Svensson, M. Foad, M.G. Grimaldi, Mechanism of de‐activation and clustering of B in Si at extremely high concentration, Nuclear Instruments and Methods B 253, 50 (2006). 37. L. Romano, A.M. Piro, G. Bisognin, E. Napolitani, D. De Salvador, M.G. Grimaldi, Effect of strain on the carrier mobility in heavily doped p‐type Si, Phys. Rev. Lett. 97, 136605 (2006). 38. L. Romano, R. De Bastiani, C. Miccoli, G. Bisognin, E. Napolitani, D. De Salvador, M.G. Grimaldi, Carrier mobility and strain effect in heavily doped p‐type Si, Materials Science and Engineering B 135, 220 (2006). 39. G. Bisognin, D. De Salvador, E. Napolitani, A. Carnera, L. Romano, A.M. Piro, S. Mirabella, M.G. Grimaldi, Lattice strain of B–B pairs formed by He irradiation in crystalline Si1‐xBx/Si, Nuclear Instruments and Methods B 253, 55 (2006). 40. L. Romano, A.M. Piro, M.G. Grimaldi, E. Rimini, Room‐temperature B off‐lattice displacement and electrical deactivation induced by H and He implantation, Nuclear Instruments and Methods B 249, 181 (2006). 41. L. Romano, A.M. Piro, R. De Bastiani, M.G. Grimaldi, E. Rimini, Group III impurities – Si interstitials interaction caused by ion irradiation, Nuclear Instruments and Methods B 242, 646 (2006). 42. A. M. Piro, L. Romano, P. Badalà, S. Mirabella, M. G. Grimaldi, E. Rimini, Role of Si self‐interstitials on the electrical de‐activation of B doped Si, Nuclear Instruments and Methods B 242, 656 (2006). 43. G. Impellizzeri, S. Mirabella, L. Romano, E. Napolitani, A. Carnera, M.G. Grimaldi, F. Priolo, Fluorine incorporation during Si solid phase epitaxy, Nuclear Instruments and Methods B 242, 614 (2006). 44. L. Romano, A. M. Piro, S. Mirabella, M. G. Grimaldi, E. Rimini, Lattice location and thermal evolution of small B complexes in crystalline Si, Appl. Phys. Lett. 87, 201905 (2005). 45. L. Romano, A.M. Piro, M.G. Grimaldi, G.M. Lopez, V. Fiorentini, Influence of point defects injection on the stability of supersaturated Ga‐Si solid solution, Phys. Rev. B 71, 165201 (2005). 46. A. M. Piro, L. Romano, S. Mirabella, M. G. Grimaldi, Room Temperature Boron Displacement in Crystalline Silicon induced by Proton Irradiation, Appl. Phys. Lett. 86, 81906 (2005). 47. L. Romano, A.M. Piro, M.G. Grimaldi, E. Rimini, Impurities – Si interstitials interaction in Si doped with B or Ga during ion irradiation, Journal of Physics: Condensed Matter 17, S2279 (2005). 48. A. M. Piro, L. Romano, P. Badalà, S. Mirabella, M. G. Grimaldi, E. Rimini, Cross section of the interaction between substitutional B and Si self‐interstitials generated by ion beams, Journal of Physics: Condensed Matter 17, S2273 (2005). 5/6 49. L. Romano, A. M. Piro, S. Mirabella, M. G. Grimaldi, B implanted at room temperature in crystalline Si: B defect formation and dissolution, Materials Science and Engineering B 124‐125, 253 (2005). 50. A. M. Piro, L. Romano, S. Mirabella, and M. G. Grimaldi, Boron lattice location in room temperature ion implanted Si crystal, Materials Science and Engineering B 124‐125, 249 (2005). 51. S. Mirabella, G. Impellizzeri, E. Bruno, L. Romano, M. G. Grimaldi, F. Priolo, E. Napolitani, A. Carnera, Fluorine segregation and incorporation during solid phase epitaxy of Si, Appl. Phys. Lett. 86, 121905 (2005). 52. L. Romano, A. M. Piro, E. Napolitani, A. Spada, M. G. Grimaldi, E. Rimini, Electrical activation and lattice location of B and Ga impurities implanted in Si, Nuclear Instruments and Methods B 219‐220, 727 (2004). 53. A. M. Piro, L. Romano, A. Spada, F. La Via, M. G. Grimaldi, E. Rimini, Structural characterization and oxygen concentration profiling of Co/Si multilayer structure, Nuclear Instruments and Methods B 219‐220, 732 (2004). 54. L. Romano, E. Napolitani, V. Privitera, S. Scalese, A. Terrasi, S. Mirabella, M.G. Grimaldi, Carrier Concentration And Mobility In B Doped Si1‐XGex, Materials Science and Engineering B 102, 49 (2003). 6/6