CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
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""""""""""""""""""""""""""""""""""""""""""""""CONTENTS__"
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Personnel!
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Publications! !
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!!8!
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Conferences! !
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15!
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Organization!of!conferences! !
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21!
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Patents!
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Research!Projects!
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21!
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22!
New!National!and!International!Collaborations!
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27!
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New!Facilities!!
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Scientific!contributions!
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28"
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1. Scaling!issues!in!CMOS!logic!beyond!Si"based!technology! !
29"
2. Innovative!technologies!in!Non"Volatile!Memories!!
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32"
3. Spintronics!
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35"
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4. Metamaterials!towards!the!integration!of!material!science,"
electronics!and!optics!!
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38"
5. Tailoring!innovative!devices!by!parameter"free!simulations!
39"
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
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""""""""""""""""""""""""""""""""""""""""""""""Personnel__"
New"personnel"
2008"
! Matteo"Belli,!Post"Doctoral!Fellow"
!
!
Matteo!Belli!received!the!Italian!Laurea!Degree!in!Physics!in!2002!at!the!University!of!Parma!with!a!
thesis!on!MBE!growth!of!InGaAs/AlGaAs!quantum!dots!for!optical!applications,!held!at!the!IMEM"
CNR!institute!in!Parma.!He!defended!his!PhD!thesis!in!2006!at!the!Physics!Department!of!the!same!
university.! The!PhD! work! was!related!to!the! magnetic!characterization! of! carbon! nanostructures,!
mainly! by! solid! state! NMR,! SQUID! magnetometry! and! µSR,! and! was! followed! also! for! a! 2"years!
post"doctoral! fellowship.! Matteo! Belli's! joined! MDM! to! work! on! the! characterization! of! shallow!
donors!in!Si!with!pulsed!electron!paramagnetic!resonance!spectroscopy!and!on!quantum!transport!
and! microwave! effects! in! Si! nanodevices.! His! research! activity! is! performed! within! the! AFSID!
european!project.!
!
Gabriele"Congedo,"PhD!Student"
Gabriele!Congedo!received!his!Master!Degree!in!Materials!Engineering!at!the!University!of!Salento!
(Lecce)!in!October!2007,!discussing!a!thesis!on!the!application!of!a!LIS!device!to!synthesize!silicon!
nanocrystals!in!a!SiOxNy!matrix.!In!January!2008!he!joined!MDM!as!a!student!of!the!23rd!PhD!School!
in!Materials!and!Structure!Engineering!at!the!Innovation!Engineering!Department!of!the!University!
of!Salento.!His!research!activity!focuses!on!the!characterization!of!high"#!oxides!and!metal!gates!for!
non"volatile!charge!trapping!memories!using!mainly!electrical!!measurements!(C"V!and!I"V)!at!room!
temperature! and! as! a! function! of! temperature! (from! 77! K! up! to! 450! K).! He! is! also! trained! on!
ellipsometric! spectroscopy,! thermal!evaporation! and!rapid! thermal! annealing! processes.!This!
activity!is!performed!in!the!framework!of!the!European!GOSSAMER!project.!
"
Andrea"Andreozzi,"Undergraduate!Student!!
Andrea!Andreozzi!is!working!for!his!master!thesis!on!the!MBE!growth!of!oxides!on!Ge!and!III"Vs!and!
on!the!preparation!of!these!surfaces.!
!
2007"
! Elena"Cianci,!Researcher!!
Elena!Cianci!graduated!in!Physics!at!University!of!Rome!“La!Sapienza”!in!1997.!As!post!graduate!she!
had!a! fellowship! at!OAR! (Astronomical!Observatory!of! Monteporzio! Catone! "! Rome)! focusing! her!
research! activity! on! silicon! microfabrication! for! optical! and! micromechanical! devices.! She!
developed! a!fabrication! process!for!a! silicon!grism,! an!optical! dispersor!to!be! used! in! telescopes,!
performing!her!research!activity!at!the!Institute!for!Solid!State!Electronics!IESS"CNR,!Rome.!In!2003!
she! obtained! her! PhD! from! the! University! of! Rome! “RomaTRE”! defending! a! thesis! on! the!
development! of! capacitive! micromachined! ultrasonic! transducers! (CMUT)! for! application! in!
echographic! imaging.! She! continued! her! activity! on! silicon! microfabrication! at! IESS! as! postdoc!
fellow!and!then!as!a!contract!researcher.!She!joined!the!MDM!National!Laboratory!on!May!2007!
where! her! major! activities! relate! with! the! deposition! of! high"#! dielectric! thin! films! by! Atomic!
!
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CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
Layer!Deposition,!and!their!process!integration!in!devices!for!non!volatile!memory!application.!!She!
has!currently!42!refereed!publications!and!4!patents!as!co"author.!
!
!
Alessio"Lamperti,!Researcher!
Dr.! Alessio! Lamperti! graduated! in! Nuclear! Engineering! (M.Sci.)! at! Politecnico!! di! Milano! (Milano,!
Italy).! After! he! obtained! the! Ph.D.! degree! "cum! laude"! in! Radiation! Science! and! Technology! at!
Politecnico!di!Milano!(Milano,!Italy)!in!a!joint!research!project!with!The!University!of!Chicago,!The!
Enrico!Fermi!Institute!(Chicago,!USA)!financed!by!Assolombarda;!his!Ph.D.!thesis!focused!on!use!of!
Secondary! Ion! Mass! Spectrometry! (SIMS)! with! nanometric! lateral! resolution! to! investigate!
materials!science!surfaces!and!cell!biology!insights.!He!got!a!Post"Doc!Marie!Curie!Fellowship!with!
the!EU"RTN!Ultrasmooth!at!the!University!of!Durham!(Durham,!UK)!where!he!focused!his!research!
on!the!study!of!thin!films!and!multilayers!!for!spintronics!mainly!using!x"ray!scattering!techniques,!
also! at! synchrotrons! (SRS,! Daresbury,! UK! and! ESRF,! Grenoble,! France).! He! also! contributed! to!
Polarised!Neutron!Reflectivity!experiments!(ILL,!Grenoble,!France).!From!May!2007,!he!joined!the!
MDM!National!Laboratory!within!the!EMMA!and!FIRB!projects:!his!major!activities!relates!with!the!
structural! and! physical"chemical! characterization! of! thin! films! and! layers! of! transition! metals! and!
their!binary! oxides! for! MIM! and! NVM! applications.! He! mainly! uses! X"Ray!scattering!(XRR,!GIXRD)!
and!TOF"SIMS!depth!profiles.!He!is!also!experienced!in!Raman!Spectroscopy,!FT"IR.!He!is!currently!
author!of!more!than!30!referred!publications!in!international!journals.!
! Massimo"Longo,!Researcher!
Massimo! Longo! graduated! in! Physics! at! the! Università! degli! Studi! di! Lecce! (Italy)! in! 1993.! After!
obtaining!his!PhD!in!Physics!from!the!same!University!in!1998,!whose!thesis!argument!was!on!the!
Metalorganic!Vapour!Phase!Epitaxy!(MOVPE)!of!II"VI!semiconductors,!he!was!a!post"doctoral!fellow!
in!1998"99,!and!studied!the!MOVPE!deposition!of!quantum!confined!heterostructures!of!III"V!and!
nitride! semiconductors! for! optoelectronic! applications.! In! 1999"2007! he! was! a! researcher! at! the!
Physics! Department! of! Università! degli! Studi! di! Parma! (Italy)! with! CNR"INFM! grants! and! research!
contracts;!during! such! a!period!he! installed! the! MOVPE!Laboratory!and!then! studied! the! MOVPE!
realization! of! InP"based! heterostructures! for! photovoltaic! and! microelectronic! applications,! also!
performing! some! teaching! activity.! He! joined! the! MDM! National! Laboratory! of! Agrate! Brianza!
(Italy)! in! April! 2007! as! a! CNR"INFM! researcher,! being! in! charge! of! the! Metal! Organic! Chemical!
Vapour! Deposition! (MOCVD)! of! chalcogenide! materials! for! phase! change! memory! (PCM)!
applications,! as! well! as! of! their! morphological! characterization! (electron! microscopy).! He! is!
currently!involved!in!the!European!CHEMAPH!Project!and!Italian!FIRB!(RBIP06YSJJ)!Project,!as!well!
as!in!the!Galileo!–!Integrated!Italian"French!actions.!He!is!author!of!29!journal!papers,!6!conference!
papers!and!25!contributions!published!on!conference!proceedings.!
!
! Bogumila"Kutrzeba!Kotowska,!Post"Doctoral!Fellow!"
Bogumila! Kutrzeba"Kotowska! received! the! MSc! degree! in! Physics! from! Gdansk! University! of!
Technology! in! Poland! in! 1999.! In! July! 2006! she! obtained! her! PhD! from! the! Gdansk! University! of!
Technology! in! Poland! about! space! charge! limited! current! under! the! charge! carrier! velocity!
saturation!conditions.!During!her!PhD!she!was!participating!in!the!SOCRATES!international!project!
and! The! Executive! Program! of! Scientific! and! Technological! Co"operation! between! the! Italian!
Republic! and! the! Republic! of! Poland.! According! to! these! two! international! programs! she! spend!
more!than!one!year!in!Noise!Research!Laboratory!in!Politecnico!di!Torino.!In!the!period!Jan!2007"
4
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CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
Feb!2008!she!has!been!Post"Doctoral!Fellow!in!the!PROTEO/TESEO!project!at!the!MDM!Laboratory!
where!she!is!now!working!as!a!Post"Doctoral!Fellow!in!the!VERSATIVE!project.!She!is!experienced!in!
clean!room!processes!for!microelectronic!and!optoelectronic!applications!like:!e"beam!lithography!
and!optical!lithography,!e"beam!and!thermal!evaporation,!spin!coating!technique!and!wet!and!dry!
etching!techniques.!Her!research!activities!are!mainly!focused!on!the!organic!and!inorganic!diode,!
transistor!and!cross!bar!memory!device!preparations!and!characterization.!
! Olivier"Salicio,!Post"Doctoral!Fellow"
!
!
Olivier! Salicio! received! a! Masters! degree! in! Materials! and! microtechnology! in! 2002! at! the!
Université!de!Toulon!et!du!Var!(France)!and!a!Masters!degree!in!Microelectronics!speciality!Physics!
of!electronic!components!in!2003!at!the!Université!Joseph!Fourier!de!Grenoble!(France).!He!then!
obtained!his!PhD!in!Micro!and!Nano!Electronics!at!the!Institut!Polytechnique!National!de!Grenoble!
(France)! in! 2007,! working! on! the! Synthesis! by! MOCVD! and! characterisation! of! SrTiO3! thin! films! –!
High"#! dielectric! for!microelectronic! applications.! He! joined! the!MDM! Laboratory! (Italy)! as!a!Post!
doctoral! fellow! in! 2007,! working! on! the! MOCVD! growth! and! study! of! chalcogenide! materials! for!
Phase!Changing!Memories!(PCM).!His!main!interests!are!focusing!on!the!growth!by!MOCVD!of!thin!
film!layers!of!chalcogenide!materials!(GexSbyTez)!for!the!next!generation!of!Flash!memories!and!on!
physical!characterisations!such!as!X"ray!diffraction,!X"ray!reflectometry,!Raman!spectroscopy,!total!
reflection!X"ray!fluorescence.!
!
Antonio"Vellei,!PhD!student"
Antonio! Vellei! received! his! Laurea! degree! in! Electronic! Engineering! at! the! Università! di! Roma!
“RomaTRE”!with!an!experimental!thesis!on!"Design,!realization!and!characterization!of!2D!Position!
Sensitive! Detectors! on! polycrystalline! CVD! diamond! films"! in! 2005.! After,! he! worked! at! the! Solid!
State!Diamond!Electronic!Lab!where!he!developed!JFETs!on!polycrystalline!CVD!diamond!films!for!
RF! application.! In! November! 2006! he! started! the! PhD! school! at! the! Università! of! Milano! Bicocca!
and! he! joined! the! MDM! National! Lab.! His! research! activity! is! nowadays! focused! on! simulation,!
realization! and! characterization! of! silicon! nanostructures! for! classical! and! quantum! information!
processing.!
!
Roberto"Fallica,!Post"graduated!Fellow"
Roberto!Fallica!received!his!Laurea!Degree!in!Electronics!Engineering!from!Politecnico!di!Milano!in!
April! 2007! with! a! dissertation! on! the! characterization! of! the! thermal! properties! of! phase! change!
materials!and!dielectrics!by!the!3$!method.!In!June!2007!he!won!a!fellowship!to!continue!working!
at! MDM! Laboratory.! His! main! interests! are! in! the! characterization! techniques! of! phase! change!
materials! thin! films! for! non! volatile! memories.! In! particular,! he! developed! the! instrumentation!
required! to! perform! measurement! of! electrical! resistivity! as! a! function! of! temperature! and! is!
contributing! in! setting! up! a! cryogenic! characterization! instrument! for! Hall! mobility! and! carrier!
density!measurements.""
"
!
Flavio"Volpe,!Undergraduate!Student!
Flavio! Volpe! is! working! for! his! master! thesis! on! electrical! measurements! of! resistive! switching!
memories!based!on!transition!metal!binary!oxides.!
!
!
!
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CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
Former"personnel"
Hired"in"2007!2008"
! Silvia"Capelli,"Researcher"
!
From!2008!she!is!employed!as!beamline!scientist!at!ILL,!Grenoble!(France).!
!
Eleni"Katsia,!Post"Doctoral!Fellow"
From!2008!she!is!employed!in!a!private!company.!
"
! Rossella"Latempa,!Post"Doctoral!Fellow"
From!2008!she!is!employed!as!permanent!high!school!professor.!
"
! Dimitra"Tsoutsou,!Post"Doctoral!Fellow"
From!2008!she!is!employed!as!Post"Doctoral!Fellow!at!the!Demokritos,!Athens!(Greece)."
"
! Ileana"Alicia"Zucchi,!Post"Doctoral!Fellow"
!
From!2008!she!is!employed!as!permanent!researcher!at!CONICET,!Mar!del!Plata!(Argentina).!
!
Silvia"Caprioli,"Post"graduated!Fellow!
From!2008!she!is!employed!with!permanent!contract!in!a!private!company.!
!
Hired"before"2007"
!
Emiliano"Bonera,"Researcher"
From! 2007! he! is! employed! as! a! permanent! researcher! at! the! Department! of! Materials! Science,!
Università!di!Milano!Bicocca,!Milano!(Italy)."
"
!
Sandro"Ferrari,!Researcher"
From! 2007! he! is! employed! as! senior! researcher! and! quality! system! responsible! at! Petroceramics!
SpA!private!company."
"
!
Giovanna"Scarel,"Researcher"
From! 2007! she! is! employed! as! a! post"doctoral! fellow! in! the! Department! of! Chemical! and!
Bimolecular!Engineering!at!the!North!Carolina!State!University,!Rayleigh!(USA)."
"
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6
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Jean!Luc"Battaglia,!Professor,!Visiting!Scientist"
In! 2007!he! is!returned! back!to!Laboratoire!Trefle,!University!of!Bordeaux.!He! is! still!collaborating!
with!MDM!supported!by!an!Italian"French!exchange!program!(2007"2008).!
!
Claudio"Amabile,"Post"Doctoral!Fellow"
From!2008!he!is!employed!in!a!private!company.!
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CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
! Nolwenn"Huby,!Post"Doctoral!Fellow"
From!2008!she!is!employed!as!researcher!at!the!Institut!de!Physique,!Université!de!Rennes,!Rennes!
(France).!
"
!
Md."Nurul"Kabir"Bhuiyan,"Post"Doctoral!Fellow"
From! 2007! he! is! employed! as! post"doctoral! fellow! in! the! Department! of! Chemistry! at! the!
Katholieke!Universiteit!Leuven,!Leuven!(Belgium)."
"
!
Milena"Teodora"Georgeva!Post"Doctoral!Fellow"
From!2008!she!is!back!in!Bulgaria."
!
Hongliang"Lu,!Post"Doctoral!Fellow"
"
From!2007!he!is!employed!as!post"doctoral!fellow!in!the!Department!of!Electronic!Engineering!at!
the!University!of!Tokyo,!Tokyo!(Japan).!
"
! Inmaculada"Suàrez"Lòpez,!Post"Doctoral!Fellow"
From! 2007! she! is! employed! as! Post"Doctoral! Fellow! at! the! Department! of! Physics,! Politecnico! di!
Milano,!Milano!(Italy)."
"
! Stergios"Volkos,!Post"Doctoral!Fellow"
From!2007!he!is!servicing!in!the!Greek!Army.!
"
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Personnel"with"different"positions"(in"2007!2008)"
! Michele"Perego,!Researcher,!!from!2007!
! Silvia"Baldovino,"Post"Doctoral!Fellow,!from!2008"
! Gabriele"Seguini,!Post"Doctoral!Fellow,!from!2007"
"
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CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
""""""""""""""""""""""""""""""""""""""""""""""Publications__"
"
2008"
"
! E.!Prati,!R.!Latempa,!M.!Fanciulli,!“Photon!assited!tunneling!in!quantum!dots”,!in:!“Electron!spin!
resonance!in!low!dimensional!structures!and!related!phenomena”,!!in!press!Editor!M.!Fanciulli,!
Springer!(2008)!
!
! A.!Adulfas,!V.!Plausinaitiene,!M.!Skapas,!C.!Wiemer!,!W.!Gawelda,!J.!Siegel!,!S.!Rushworth,!“Hot"wire!
!
!
!
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chemical!vapor!growth!and!characterization!of!crystalline!GeTe!films”,!Journal!of!Crystal!Growth,!in"
press!(2008).!doi:10.1016/j.jcrysgro.2008.10.038!
!
A.!Lamperti,!S.!Spiga,!H.L.!Lu,!C.!Wiemer,!M.!Perego,!E.!Cianci,!M.!Alia,!M.!Fanciulli,!“Study!of!the!
interfaces!in!resistive!switching!NiO!thin!films!deposited!by!both!ALD!and!e"beam!coupled!with!
different!electrodes!(Si,!Ni,!Pt,!W,!TiN)”,!Microelectronic!Engineering,!in"press,!(2008).!
doi:10.1016/j.mee.2008.09.039!!
!
A.!Debernardi,!M.!Fanciulli,!“Confinement!effect!in!P!doped!spherical!Si!nanocrystals”,!Solid!State!
Sciences,!in"press!(2008).!doi:10.1016/j.solidstatesciences.2007.11.040!!
!
A.!Debernardi,!M.!Fanciulli,!“How!to!compute!shallow!states!in!an!external!field!without!adjustable!
parameters:!simulations!for!a!silicon"based!qubit”,!Topic!in!Applied!Physics!Series!(Springer,!
Heidelberg),!in"press!(2008).!
!
H.!P.!Gunnlaugsson,!C.!Bender!Koch,!K.!Bharuth"Ram,!M.!Dietrich,!Ö.!Helgason,!M.!B.!Madsen,!R.!
Mantovan,!D.!Naidoo,!S.!Steinthorsson,!L.!Vistisen,!G.!Weyer,!“Disordered!chromite!in!the!Martian!
meteorite!Allan!Hills!84001”,!Hyperfine!Interactions,!in"press"(2008)"doi:10.1007/s10751"008"9834"2!
!
H.!P.!Gunnlaugsson,!G.!Weyer,!R.!Mantovan,!D.!Naidoo,!R.!Sielemann,!K.!Bharuth"Ram,!M.!Fanciulli,!
K.!Johnston,!S.!Olafsson,!G.!Langouche,!“Isothermal!defect!annealing!in!semiconductors!
investigated!by!time"delayed!Mössbauer!spectroscopy:!application!to!ZnO”,!Hyperfine!Interactions,!
in"press"(2008).!!doi:10.1007/s10751"008"9893"4!
!
D.!Naidoo,!H.!P.!Gunnlaugsson,!K.!Bharuth"Ram,!V.!V.!Naicker,!G.!Weyer,!R.!Sielemann,!R.!
Mantovan,!M.!Fanciulli,!ISOLDE!Collaboration,!“57Fe!Mössbauer!investigations!in!p"type!Silicon!
Germanium!single!crystals”,!Hyperfine!Interactions,!in"press!(2008).!doi:!10.1007/s10751"008"9880"9!
!
!A.!Debernardi,!C.!Wiemer,!M.!Fanciulli,!“Epitaxial!anatase!HfO2!on!high"mobility!substrate!for!ultra"
scaled!CMOS!devices”,!Mat.!Sci.!Semicon.!Process.,"in"press!(2008).!doi:10.1016/j.mssp.2008.07.011!!
!
M.!Longo,!O.!Salicio,!C.!Wiemer,!R.!Fallica,!A.!Molle,!M.!Fanciulli,!C.!Giesen,!B.!Seitzinger,!P.K.!
Baumann,!M.!Heuken,!S.!Rushworth,!“Growth!study!of!GexSbyTez!deposited!by!MOCVD!under!
nitrogen!for!non"volatile!memory!applications”,!Journal!of!Crystal!Growth,!in"press!(2008).!
doi:10.1016/j.jcrysgro.2008.07.054!!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
! E.Katsia,!G.Tallarida,!S.!Ferrari,!E.!Bundgaard,!R.!Sondergaard,!F.C.Krebs,!“Integration!of!organic!
!
based!Schottky!junctions!for!crossbar!non!volatile!memory!applications”!,!Microelectronic!
Engineering,!in"press!(2008).!doi:10.1016/j.mee.2008.09.019!!
!
C.!Gaumer,!E.!Martinez,!S.!Lhostis,!C.!Wiemer,!M.!Perego,!V.!Loup,!D.!Lafond,!J"M!Fabbri,!“Interface!
Study!In!a!Metal!High"k!Gate!Stack:!Tantalum!Nitride!on!Hafnium!Oxide”,!ECS!Transactions,!in"press!(2008).!
!
! N.!Huby,!G.Tallarida,!B.Kutrzeba"Kotowska,!S.Ferrari,!E.Guziewicz,!%.!Wachnicki,!M.!Godlewski,!
!
!
!
!
“New!selector!based!on!zinc!oxide!grown!by!low!temperature!atomic!layer!deposition!for!vertically!
stacked!non!volatile!memory!devices”!Microelectronic!Engineering,!in"press!(2008).!
doi:10.1016/j.mee.2008.07.016!
!
S.!Schamm,!P.E.!Coulon,!S.!Miao,!S.N.!Volkos,!H.L.!Lu,!L.!Lamagna,!C.!Wiemer,!D.!Tsoutsou,!G.!Scarel,!
M.!Fanciulli,!“Chemical/Structural!Nanocharacterization!And!Electrical!Properties!of!ALD"grown!
La2O3/Si!Interfaces!For!Advanced!Gate!Stacks”,!Journal!of!The!Electrochemical!Society,!in"press!(2008).!!
!
D.!Tsoutsou,!G.!Scarel,!A.!Debernardi,!S.C.!Capelli,!S.N.!Volkos,!L.!Lamagna,!S.!Schamm,!P.E.!Coulon,!
M.!Fanciulli,!“Infrared!spectroscopy!and!X"ray!diffraction!studies!on!the!crystallographic!evolution!
of!La2O3!films!upon!annealing”!,!Microelectronic!Engineering,!in"press!(2008).!doi:10.1016/j.mee.2008.09.033!!
!
K.!Bharuth"Ram,!H.!P.!Gunnlaugsson,!R.!Mantovan,!V.!V.!Naicker!,!D.!Naidoo,!R.!Sielemann,!G.!
Weyer,!Th.!Aigne,!ISOLDE!Collaboration,!“Mössbauer!study!of!Fe!in!3C"SiC!following!57Mn!
implantation”,!Hyperfine!Interactions,!in"press!(2008).!doi:10.1007/s10751"008"9791"9!!
!
K.!Bharuth"Ram,!V.!V.!Naicker!,!D.!Naidoo,!H.!P.!Gunnlaugsson,!R.!Mantovan,!G.!Weyer,!M.!Dietrich,!
J.E.!Butler,!ISOLDE!Collaboration,!“Mössbauer!study!of!Fe!in!CVD!diamond!following!57Mn!
implantation”,!Hyperfine!Interactions,!in"press!(2008).!doi:10.1007/s10751"008"9669"x!
!
! A.!Abrutis,!V.!Plausinaitiene,!M.!Skapas,!C.!Wiemer,!M.!Longo,!O.!Salicio,!A.!Pirovano,!J.!Siegel,!W.!
!
!
Gawelda,!S.!Rushworth,!C.!Giesen,!“Chemical!vapor!deposition!of!chalcogenide!materials!for!phase"
change!memo!ries”,!Microelectronic!Engineering,!in"press!(2008).!doi:10.1016/j.mee.2008.09.014!!
!
M.!Godlewski,!E.!Guziewicz,!J.!Szade,!A.!Wójcik"G&odowska,!%.!Wachnicki,!T.!Krajewski,!K.!Kopalko,!
R.!Jakie&a,!S.!Yatsunenko,!E.!Prze'dziecka,!P.!Kruszewski,!N.!Huby,!G.!Tallarida,!S.!Ferrari,!“Vertically!
stacked!non!volatile!memory!devices!"!material!considerations”,!Microelectronic!Engineering,!in"
press!(2008),!doi:10.1016/j.mee.2008.09.012!!
!
E.Katsia,!G.Tallarida,!B.Kutrzeba"Kotowska,!S.Ferrari,!E.Bundgaard,!R.Sondergaard,!F.Krebs,!
“Integration!of!organic!based!Schottky!junctions!into!crossbar!arrays!by!standard!UV”!lithography,!
Organic!Electronics,!in"press!(2008).!doi:10.1016/j.orgel.2008.08.010!
!!
! S.!Spiga,!A.!Lamperti,!C.!Wiemer,!M.!Perego,!E.!Cianci,!G.!Tallarida,!H.!L.!Lu,!M.!Alia,!F.!G.!Volpe,!M.!
Fanciulli,!“Resistance!switching!in!amorphous!and!crystalline!binary!oxides!grown!by!electron!beam!
and!atomic!layer!deposition”,!Microelectronic!Engineering,!(2008),!in"press,!doi:110.1016/j.mee.2008.09.18!
!
!
9
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
! H.L.!Lu,!G.!Scarel,!L.!Lamagna,!M.!Fanciulli,!S.J.!Ding,!D.!Zhang,!“Effect!of!rapid!thermal!annealing!on!
!
optical!and!interfacial!properties!of!atomic"layer"deposited!Lu2O3!films!on!Si!(100)”,!Appl.!Phys.!
Lett.!93,!152906!(2008).!doi10.1063/1.3002373!
!
A.!Molle,!S.!Spiga,!A.!Andreozzi,!M.!Fanciulli,!G.!Brammertz,!M.!Meuris,!“Structure!and!interface!
bonding!of!GeO2/Ge/!In0.15Ga0.85As!heterostructures”,!Appl.!Phys.!Lett.!93,!133504!(2008).!
doi:10.1063/1.2992560!!
!
! R.!Mantovan,!A.!Debernardi,!M.!Fanciulli,!“Size!dependence!of!the!Mössbauer!recoilless!fraction!in!
!
!
!
!
!
!
!
!
10!
("Sn!nanocrystals”,!J.!Phys.:!Condens.!Matter,!20,!5!(2008).!doi:10.1088/0953"8984/20/38/385201!!
!
H.L.!Lu,!G.!Scarel,!C.!Wiemer,!M.!Perego,!S.!Spiga,!M.!Fanciulli,!G.!Pavia,!“Atomic!Layer!Deposition!of!
NiO!Films!on!Si(100)!Using!Cyclopentadienyl"Type!Compounds!and!Ozone!as!Precursors”,!Journal!of!
The!Electrochemical!Society,!155,!H807–H811!(2008).!doi:10.1149/1.2965456!!
!
A.!Molle,!S.!Spiga,!M.!Fanciulli,!“Stability!and!interface!quality!of!GeO2!films!grown!on!Ge!by!atomic!
oxygen!assisted!deposition”,!J.!Chem.!Phys.,!129,!011104!(2008).!doi:10.1063/1.2955446!!
!
E.!Prati,!M.!Fanciulli,!G.!Ferrari,!M.!Sampietro,!”Giant!random!telegraph!signal!generated!by!single!
charge!trapping!in!submicron!n"metal"oxide"semiconductor!field"effect!transistors”,!J.!Appl.!Phys.,!
103,!1!(2008).!doi:10.1063/1.2939272!!
!
R.!Mantovan,!M.!Georgieva,!M.!Fanciulli,!A.!Goikhman,!N.!Barantcev,!Yu.!Lebedinskii,!A.!Zenkevich,!
“Synthesis!and!characterization!of!Fe3Si/SiO2!structures!for!spintronics”,!Physica!Status!Solidi!(A),!
205,!1753!(2008).!doi:10.1002/pssa.200723464!
!
H.L.!Lu,!G.!Scarel,!M.!Alia,!M.!Fanciulli,!S.J.!Ding,!D.W.!Zhang,!“Spectroscopic!ellipsometry!study!of!
thin!NiO!films!grown!on!Si(100)!by!atomic!layer!deposition”,!Appl.!Phys.!Lett.,!92,!222907!(2008).!
doi:10.1063/1.2938697!!
!
S.!Schamm,!P."E.!Coulon,!S.!Miao,!S.!N.!Volkos,!H."L!Lu,!L.!Lamagna,!C.!Wiemer,!D.!Tsoutsou,!G.!
Scarel,!M.!Fanciulli,!“ALD"Grown!Rare!Earth!Oxides!for!Advanced!Gate!Stacks”,!ECS!Transaction,!13,!
77"88!(2008).!doi:10.1149/1.2911487!!
!
A.!Abrutis,!V.!Plausinaitiene,!M.!Skapas,!C.!Wiemer,!O.!Salicio,!A.!Pirovano,!E.!Varesi,!S.!Rushworth,!
W.!Gawelda,!J.!Siegel,!“Hot"Wire!Chemical!Vapor!Deposition!of!Chalcogenide!Materials!for!Phase!
Change!Memory!Applications”,!Chemistry!of!Materials,!20,!3557"3559!(2008).doi:10.1021/cm8004584!
!
E.!Prati,!M.!Fanciulli,!G.!Ferrari,!A.!Calderoni,!M.!Sampietro,!“Effect!of!microwave!irradiation!on!the!
emission!and!capture!dynamics!in!silicon!metal!oxide!semiconductor!field!effect!transistors”,!J.!
Appl.!Phys.,!103,!104503,!(2008).!doi:10.1063/1.2924407!!
!
!
!
!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
! R.J.!Matyi,!L.E.!Depero,!E.!Bontempi,!P.!Colombi,!A.!Gibaud,!M.!Jergel,!M.!Krumrey,!T.A.!Lafford,!A.!
!
!
!
!
!
!
!
!
!
Lamperti,!M.!Meduna,!A.!Van!der!Lee,!C.!Wiemer,!“The!international!VAMAS!project!on!X"ray!
reflectivity!measurements!for!evaluation!of!thin!films!and!multilayers!—!Preliminary!results!from!
the!second!round"robin”,!Thin!Solid!Films,!516,!7962–7966!(2008).!doi:10.1016/j.tsf.2008.04.004!!
!
A.!Molle,!C.!Wiemer,!M.!N.!K.!Bhuiyan,!G.!Tallarida,!M.!Fanciulli,!“Epitaxial!growth!of!cubic!Gd2O3!
thin!films!on!Ge!substrates”,!J.!Phys.:!Conference!Series,!100,!042048!(2008).!doi:10.1088/1742"
6596/100/4/042048!!
!
M.!Perego,!G.!Seguini,!G.!Scarel,!M.!Fanciulli,!F.!Wallrapp,!“Energy!band!alignment!at!TiO2!/Si!
interface!with!various!interlayers”,!J.!Appl.!Phys.,!103,!043509!(2008).!doi:10.1063/1.2885109!!
!
E.!Prati,!M.!Fanciulli,!“Manipulation!of!localized!charge!states!in!n"MOSFETs!with!microwave!
irradiation”,!Phys.!Lett.!A,!372,!3102"3104!(2008).!doi:10.1016/j.physleta.2008.01.039!!
!
M.!Perego,!A.!Molle,!M.!Fanciulli,!“Effect!of!oxygen!on!the!electronic!configuration!of!Gd2O3/Ge!
heterojunctions”,!Appl.!Phys.!Lett.,!92,!042106!(2008).!doi:10.1063/1.2838344!!
!
J.!Siegel,!W.!Gawelda,!D.!Puerto,!C.!Dorronsoro,!J.!Solis,!C.N.!Afonso,!R.!Bez,!A.!Pirovano,!C.!Wiemer,!
”Amorphization!dynamics!of!Ge2Sb2Te5!films!under!nano"!and!femtosecond!laser!pulse!irradiation”,!
J.!Appl.!Phys.,!103,!023516!(2008).!doi:10.1063/1.2836788!
!!
N.!Huby,!S.!Ferrari,!E.!Guziewicz,!M.!Godlewski,!V.!Osinniy,!“Electrical!behavior!of!zinc!oxide!layers!
grown!by!low!temperature!atomic!layer!deposition”,!Appl.!Phys.!Lett.!,!92,!023502"02354!(2008).!
doi:10.1063/1.2830940!!
!
P.!Colombi,!D.K.!Agnihotri,!V.E.!Asadchikov,!E.!Bontempi,!D.!K.!Bowen,!C."H!Chang,!L.!E.!Depero,!M.!
Farnworth,!T.!Fujimoto,!A.!Gibaud,!M.!Jergel,!M.!Krumrey,!T.!A.!Lafford,!A.!Lamperti,!T.!Ma,!R.!J.!
Matyi,!M.!Meduna,!S.!Milita,!K.!Sakurai,!L.!Shabel'nikov,!A.!Ulyanenkov,!A.!Van!der!Lee,!C.!Wiemer,!
“Reproducibility!in!X"ray!reflectometry:!results!from!the!first!reflectivity!round!robin!experiment”!,!
J.!Appl.!Crystal.,!41,!143"152!(2008).!doi:10.1107/S0021889807051904!
!
L.!Fumagalli,!D.!Natali,!M.!Sampietro,!F.!Peron,!F.!Perissinotti,!G.!Tallarida,!S.!Ferrari,!“Al2!O3!as!gate!
dielectric!for!organic!transistors:!charge!transport!phenomena!in!poly(3"hexylthiophene)!based!
devices”,!Organic!Electronics!9,!198"208!(2008).!doi:10.1016/j.orgel.2007.11.001!
!
S.Spiga,!C.!Wiemer,!G.!Scarel,!G.!Seguini,!M.!Fanciulli,,!A.!Zenkevich,!Yu.!Lebedinskii,!“Physical,!
chemical!and!electrical!characterization!of!high"k!dielectrics!on!Ge!and!GaAs”,!in!Advanced!Gate!
Stacks!on!High!Mobility!Semiconductors,!edited!by!A.!Dimoulas,!E.!Gusev,!P.!McIntyre!and!M.!Heyns,!
Springer"Verlag,!27,!181"202!(2008).!!
!
!
!
!
!
!
11
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
2007"
!
! G.!Weyer,!H.!P.!Gunnlaugsson,!R.!Mantovan,!M.!Fanciulli,!D.!Naidoo,!K.!Bharuth"Ram,!T.!Agne,!
!
!
!
!
!
!
!
!
“Defect"related!local!magnetism!at!dilute!Fe!atoms!in!ion"implanted!ZnO”,!J.!Appl.!Phys.,!102,!7!
(2007).!doi:10.1063/1.2821290!!
!
U.!Russo,!D.!Ielmini,!C.!Cagli,!A.!L.!Lacaita,!S.!Spiga,!C.!Wiemer,!M.!Perego,!M.!Fanciulli,!“Conductive"
filament!switching!analysis!and!self!accelerated!thermal!dissolution!model!for!reset!in!NiO"based!
RRAM”,!IEDM!Tech.!Dig.!,!775"778!(2007).!!
!
R.!Mantovan,!M.!Georgieva,!M.!Perego,!H.L.!Lu,!S.!Cocco,!A.!Zenkevich,!G.!Scarel,!M.!Fanciulli,!
“Atomic!layer!deposition!of!magnetic!thin!films”,!Acta!Physica!Polonica!A,!112,!10!(2007).!
!!
A.!Debernardi,!M.!Fanciulli,!“The!magnetic!interaction!of!Fe!doped!ZnO!with!intrinsic!defects:!a!first!
principles!study”,!Physica!B:!Phys.!Cond.!Matt.,!401"402C,!451!(2007).!
doi:10.1016/j.physb.2007.08.209!!
!
G.!Seguini,!M.!Perego,!S.!Spiga,!M.!Fanciulli,!A.!Dimoulas,!“Conduction!band!offset!of!HfO2!on!
GaAs”,!Appl.!Phys.!Lett.,!91,!192902!(2007).!doi:10.1063/1.2805811!!
!
G.Scarel,!A.Debernardi,!D.Tsoutsou,!S.Spiga,!S.C.Capelli,!L.Lamagna,!S.N.Volkos,,!M.Alia,!M.Fanciulli,!
“Vibrational!and!electrical!properties!of!hexagonal!La2O3!films”,!Appl.!Phys.!Lett.!,!91,!102901!
(2007).!doi:10.1063/1.2779108!
!
A.!Del!Vitto,!R.!Piagge,!M.!Caniatti,!C.!Wiemer,!G.!Pavia,!F.!Sammiceli,!E.!Ravizza,!S.!Grasso,!S.!
Spadoni,!A.!Sebastiani,!C.!Scozzari,!G.!Ghidini,!C.!Pomarède,!J.!W.!Maes,!M.!Alessandri,!“A!
Morphological,!Chemical!and!Electrical!Study!of!HfSiON!Films!for!Inter!Poly!Dielectric!Applications!
in!Flash!Memories”,!ECS!Transactions,!11,!497!(2007).!doi:10.1149/1.2779585!!
!
S.!Baldovino,!S.!Spiga,!G.!Scarel,!M.!Fanciulli,!“Effects!of!the!oxygen!precursor!on!the!interface!
between!(100)Si!and!HfO2!films!grown!by!atomic!layer!deposition”,!Appl.!Phys.!Lett.,!91,!172905!
(2007).!doi:10.1063/1.2802040!!
!
A.!Votta,!E.!Bellandi,!M.!Alessandri,!A.!Vedda,!A.!M.!Ferretti,!N.!Fasoli,!F.!Moretti,!“Study!of!SiO2!
modifications!by!oxygen!plasmas!and!their!effect!on!wet!processes”,!ECS!Transactions,!11,!239!
(2007).!
!
! V.!Cosnier,!P.!Besson,!V.!Loup,!L.!Vandroux,!S.!Minoret,!M.!Casse,!X.!Garros,!J."M.!Pedini,!S.!Lhostis,!
!
12!
K.!Dabertrand,!C.!Morin,!C.!Wiemer,!M.!Perego,!M.!Fanciulli,!“Understanding!of!the!thermal!
stability!of!the!hafnium!oxide!TiN!stack!via!2!high!k!and!2!metal!deposition!techniques”,!
Microelectronic!Engineering!,!84,!1886!(2007).doi:10.1016/j.mee.2007.04.041!!
!
A.!Debernardi,!C.!Wiemer,!M.!Fanciulli,!“Epitaxial!phase!of!hafnium!dioxide!for!ultra"scaled!
electronics”,!Phys.!Rev.!B.!,!76,!155405!(2007).!doi:10.1103/PhysRevB.76.155405!!!
!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
! A.!Molle,!M.!Perego,!Md.N.K.!Bhuiyan!,!C.!Wiemer,!G.!Tallarida,!M.!Fanciulli,!“The!interface!
!
!
!
!
!
!
!
!
!
!
!
!
between!Gd2O3!films!and!Ge(001):!A!comparative!study!between!molecular!and!atomic!oxygen!
mediated!growths”,!J.!Appl.!Phys.,!102,!034513!(2007).!doi:10.1063/1.2767226!!
!
S.!Ferrari,!F.!Perissinotti,!E.!Peron,!L.!Fumagalli,!D.!Natali,!M.!Sampietro,!“Atomic!layer!deposited!
Al2O3!as!a!capping!layer!for!polymer!based!transistors”,!Organic!Electronics,!8,!407"414!(2007).!doi:!
10.1016/j.orgel.2007.02.004!!
!
R.!Mantovan,!M.!Fanciulli,!“Development!of!a!parallel"plate!avalanche!counter!to!perform!
conversion!electron!Mössbauer!spectroscopy!at!low!temperatures”,!Rev.!Sci!Instr.,!78,!5!(2007).!
doi:10.1063/1.2745654!!
!
E.!Prati,!M.!Fanciulli,!A.!Calderoni,!G.!Ferrari,!M.!Sampietro,!“Microwave!irradiation!effects!on!
random!telegraph!signal!in!a!MOSFET”,!Phys.!Lett.!A,!370,!491"493!(2007).!
doi:10.1016/j.physleta.2007.05.086!!
!
A.!Debernardi,!M.!Fanciulli,!“Ab!initio!study!of!magnetic!interaction!of!Fe!doped!ZnO!with!intrinsic!
vacancies”,!Appl.!Phys.!Lett.,!90,!212510!(2007).!doi:10.1063/1.2742597!!
!
J."L.!Battaglia,!C.!Wiemer,!M.!Fanciulli,!“An!accurate!low"frequency!model!for!the!3w!method”,!J.!
Appl.!Phys.,!101,!104510!(2007).!doi:10.1063/1.2721389!
!
A.!Molle,!C.!Wiemer,!Md.N.K.!Bhuiyan,!G.!Tallarida,!M.!Fanciulli,!G.!Pavia,!“Cubic"to"monoclinic!
phase!transition!during!the!epitaxial!growth!of!crystalline!Gd2O3!films!on!Ge(001)!substrates”,!Appl.!
Phys.!Lett.,!90,!193511!(2007).!doi:10.1063/1.2738367!!
!
M!.Perego,!G.!Scarel,!M.!Fanciulli,!I.!L.!Fedushkin,!A.!A.!Skatova,!“Fabrication!of!GeO2!layers!using!a!
divalent!Ge!precursor”,!Appl.!Phys.!Lett.,!90,!162115!(2007).!doi:10.1063/1.2723684!!
!
F.!Cannone,!M.!Collini,!L.!D'Alfonso,!G.!Baldini,!G.!Chirico,!G.!Tallarida,!P.!Pallavicini,!“Voltage!
Regulation!of!Fluorescence!Emission!of!Single!Dyes!Bound!to!Gold!Nanoparticles”,!Nanoletters,!
7(4),!1070"1075!(2007).!doi:10.1021/nl0628293!!
!
A.!Dimoulas,!D.P.!Brunco,!S.!Ferrari,!J.W.!Seo,!Y.!Panayiotatos,!A.!Sotiropoulos,!T.!Conard,!M.!
Caymax,!S.!Spiga,!M.!Fanciulli,!Ch.!Dieker,!E.K.!Evangelou,!S.!Galata,!M.!Houssa,!M.M.!Heyns,!
“Interface!engineering!for!Ge!metal"oxide–semiconductor!devices”,!Thin!Solid!Films,!515,!6337"
6343!(2007).!doi:10.1016/j.tsf.2006.11.129!!
!
R.S.!Brusa,!C.!Macchi,!S.!Mariazzi,!G.P.!Karwasz,!G.!Scarel,!M.!Fanciulli,!“Innovative!dielectrics!for!
semiconductor!technology”!,!Rad.!Phys.!Chem.,!76,!189"194!(2007).!
doi:10.1016/j.radphyschem.2006.03.033!
!!
D.!Mathiot,!M.!Perego,!M.!Fanciulli,!G.!Ben!Assayag,!“Evidence!for!a!dose!dependence!for!thermal!
redistribution!of!implanted!silicon!in!SiO2”,!Nucl.!Instr.!Meth.!Phys.!Res.!B,!254,!139"142!(2007).!
doi:10.1016/j.nimb.2006.10.077!!
13
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
! G.!Scarel,!C.!Wiemer,!M.!Fanciulli,!I.L.!Fedushkin,!G.K.!Fukin,!G.A.!Domrachev,!Y.!Lebedinskii,!A.!
!
!
!
!
!
!
Zenkevich,!G.!Pavia,!“[(Me3Si)2N]3Lu!molecular!structure!and!use!as!Lu!and!Si!source!for!atomic!
layer!deposition!of!Lu!silicate!films”,!Z.!Anorg.!Allg.!Chem.,!633,!2097"2130!(2007).!
doi:10.1002/zaac.200700223!
!!
A.!Zenkevich,!Y.!Lebedinskii,!S.!Spiga,!C.!Wiemer,!G.!Scarel,!M.!Fanciulli,!“Effects!of!thermal!
treatments!on!chemical!composition!and!electrical!properties!of!ultra"thin!Lu!oxide!layers!on!Si”,!
Microelectronic!Engineering,!84,!2263"2266!(2007).!doi:10.1016/j.mee.2007.04.126!
!
A.!Zenkevich,!Y.!Lebedinskii,!G.!Scarel,!M.!Fanciulli,!A.!Baturin,!N.!Lubovin,!“Degradation!kinetics!of!
ultrathin!HfO2!layers!on!Si(100)!during!vacuum!annealing!monitored!with!in!situ!XPS/LEIS!and!ex!
situ!AFM”,!Microelectron.!Reliab.,!47,!657"659!(2007).!doi:10.1016/j.microrel.2007.01.071!!!
!
M.!Malvestuto,!M.!Pedio,!S.!Nannarone,!G.!Pavia,!G.!Scarel,!M.!Fanciulli,!F.!Boscherini,!“A!study!of!
the!growth!of!Lu2O3!on!Si(001)!by!synchrotron!radiation!photoemission!and!transmission!electron!
microscopy”,!J.!Appl.!Phys.,!101,!074104!1"9!(2007).!!
!
V.!Ioannou"Sougleridis,!P.!Dimitrakis,!V.!Em.!Vamvakas,!P.!Normand,!C.!Bonafos,!S.!Schamm,!N.!
Cherkashin,!G.!Ben!Assayag,!M.!Perego,!M.!Fanciulli,!“Wet!oxidation!of!nitride!layer!implanted!with!
low!energy!Si!ions!for!improved!oxide"nitride"oxide!memory!stacks”,!Appl.!Phys.!Lett.,!90,!263513!
(2007).!doi:10.1063/1.2752769!!
!
D.V.!Azamat,!M.!Fanciulli,!“The!structure!of!charge"compensated!Fe3+!ions!in!ZnO”,!Physica!B,!401–
402,!382–385!(2007).!doi:10.1016/j.physb.2007.08.193!
!
M.!Perego,!O.!Jambois,!A.!Perez"Rodriguez,!P.!Pellegrino,!Carreras,!M.!Josep!Peralvarez,!C.!Bonafos,!
B.!Garrido,!“Electroluminescence!from!C"!and!Si"!rich!silicon!oxides!in!continuous!wave!and!pulsed!
excitation”,!Electron!Devices!2007!Spanish!Conference!(2007).!
!
! S.!Spiga,!C.!Wiemer,!G.!Scarel,!O.!Costa,!M.!Fanciulli,!“Electrical!characterization!of!rare!earth!oxides!
!
14!
grown!by!atomic!layer!deposition”,!in!Rare!earth!oxide!thin!films:!growth,!characterization,!and!
applications,106,pp203"223,!Eds.!M.!Fanciulli!and!G.!Scarel,!Springer"Verlag,!,!(2007).!!
!
G.!Seguini,!M.!Perego,!M.!Fanciulli,!“Experimental!determination!of!the!band!offsets!of!rare!earth!
oxides!on!different!semiconductors”,!in!Rare!earth!oxide!thin!film:!growth,!characterization,!and!
applications,!Eds.!M.!Fanciulli!and!G.!Scarel,!Springer"Verlag,!,!106,!269!(2007).!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
""""""""""""""""""""""""""""""""""""""""""""""Conferences__"
"
2008"
"
!
INVITED"Talks"
!
E.!Prati,!R.!Latempa,!M.!Fanciulli,!“Microwave!Effects!in!Silicon!Nanostructures”,!MRS!2008!Fall!
Meeting,!Boston,!MA!(USA),!December!2008.!
!
M.!Longo,!“Application!of!novel!characterization!and!deposition!techniques!for!the!implementation!
of!chalcogenide!materials!for!PCM!device!scaling”,!Numonyx!Workshop!on!Chalcogenide!Materials!
for!Phase!Change!Memory!Scaling,!Agrate!Brianza!(Italy),!November!2008!
!
C.!Wiemer,!“Chemical!vapor!deposition!of!chalcogenide!materials!for!next!generation!phase!change!
memory!devices”,!IMST!2008,!Leuven!(Belgium),!November!2008!
!
E.!Katsia,!N.!Huby,!G.!Tallarida,!S.!Ferrari,!E.!Bundgaard,!R.!Søndergaard,!F.C.!Krebs,!“Investigation!of!
hybrid!organic!ZnO!based!junctions!for!microelectronic!applications”,!ICSM!2008!–!International!
Conference!on!Science!and!Technology!of!Synthetic!Metals.!Porto!de!Galinhas!(Brazil),!July!2008!
!
E.!Prati,!R.!Latempa,!M.!Fanciulli,!“Microwave!Effects!in!Silicon!Nanostructures”,!ANM2008,!Aveiro!
(Portugal),!June!2008.!
!
M.!Fanciulli,!E.!Prati,!R.!Latempa,!and!A.!Vellei,!“Microwave!Effects!in!Silicon!Nanostructures”!NanoE3!
2008,!Margaret!River!(Australia),!June!2008.!
!
S.!Spiga,!A.!Lamperti,!C.!Wiemer,!M.!Perego,!E.!Cianci,!G.!Tallarida,!H.!L.!Lu,!M.!Alia,!F.!G.!Volpe,!M.!
Fanciulli,!“Resistance!switching!in!amorphous!and!crystalline!binary!oxides!grown!by!electron!beam!
and!atomic!layer!deposition”,!E"MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
"
ORAL"Presentations"
!
"
A.!Debernardi!and!M.!Fanciulli,!“Quantum!Confinement!and!Role!of!Dimension!in!Silicon!
Nanostructures!Doped!with!P:!a!Parameter"Free!Calculation”,!MRS!2008!Fall!Meeting,!Boston,!MA!
(USA),!December!2008.!
!
C.!Wiemer,!L.!Lamagna,!S.!Baldovino,!M.!Fanciulli,!“Structural!and!electrical!properties!of!La"based!
oxides!on!Ge!for!advanced!gate!stacks,!Workshop!on!Lanthanum!Oxide,!Dresden!(Germany),!
September!2008.!!
!
L.!Lamagna,!C.!Wiemer,!S.!Baldovino,!M.!Fanciulli,!“Atomic!layer!deposition!of!La"based!oxides!on!Si!
and!Ge!for!innovation!in!microelectronics”,!Workshop!on!lanthanum!oxide,!Dresden!(Germany),!
September!2008.!
!
!
!
15
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
R.!Fallica,!J."L.!Battaglia,!C.!Wiemer,!E.!Varesi,!S.!Cocco,!M.!Fanciulli,!“Thermal!and!electrical!
characterization!of!materials!for!PCM!cell”!,!ECTP2008,!Pau!(France),!September!2008.!
!
R.!Mantovan,!C.!Wiemer,!A.!Lamperti,!M.!Georgieva,!M.!Fanciulli,!A.!Goikhman,!N.!Barantcev,!Y.!
Lebedinski,!and!A.!Zenkevich,!“Mössbauer!spectroscopy!study!of!interfaces!for!spintronics”,!
International!Symposium!on!the!Industrial!Applications!of!the!Mössbauer!effect!(ISIAME!’08),!
Budapest!(Hungary)!August!2008.!
!
M.!Longo,!O.!Salicio,!C.!Wiemer,!R.!Fallica,!A.!Molle,!M.!Fanciulli,!C.!Giesen,!M.!Heuken,!S.!Rushworth,!
“Growth!study!of!GexSbyTez!deposited!by!MOCVD!under!nitrogen!for!non!volatile!memory!
applications”,!ICMOVPE–XIV,!14th!International!Conference!of!Metalorganic!Vapor!Phase!Epitaxy,!
Metz!(France),!June!2008.!
!
L.!Lamagna,!D.!Tsoutsou,!S.N.!Volkos,!S.!Schamm,!P.E.!Coulon,!S.!Miao,!M.!Fanciulli,!!“In!situ!
spectroscopic!ellipsometry!of!lanthanum"based!oxides!grown!using!atomic!layer!deposition”,!8th!
International!Conference!on!Atomic!Layer!Deposition,!Bruges!(Belgium),!June!2008.!
!
A.!Debernardi,!C.!Wiemer,!M.!Fanciulli,!“A!new!phase!of!HfO2!for!ultrascaled!CMOS!devices”,!
E"MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
!
A.!Lamperti,!L.!Courtade,!J.G.!Lisoni,!L.!Goux,!C.!Turquat,!Ch.!Muller,!D.J.!Wouters,!S.!Spiga,!M.!
Fanciulli,!“X"ray!and!ToF"SIMS!comparison!of!resistive!switching!NiO!films!obtained!from!controlled!
Ni!thermal!oxidation,!e"beam!and!ALD”,!E"MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
!
G.!Seguini,!S.!Spiga,!M.!Perego,!M.!Fanciulli,!“Silicon!nanocrystals!in!!
metal/oxide/semiconductor!structures!for!non"volatile!memory!applications”,!!
E"MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
!
A.!Molle,!S.!Spiga,!M.!Fanciulli,!G.!Brammertz,!M.!Meuris,!“In!situ!interface!and!surface!
characterization!of!Ge"passivated!III"V!substrates!for!high"k!oxide!deposition”,!E"MRS!2008!Spring!
Meeting,!Strasbourg!(France),!May!2008.!
!
A.!Molle,!M.!N.!K.!Bhuiyan,!M.!Perego,!C.!Wiemer,!G.!Tallarida,!S.!Spiga,!and!M.!Fanciulli,!“Molecular!
beam!deposition!of!Gd2O3!films!for!Ge"based!ultrascaled!electronic!devices”,!E"MRS!2008!Spring!
Meeting,!Strasbourg!(France),!May!2008.!
!
M.!Perego,!G.!Seguini,!M.!Fanciulli!“XPS!and!IPE!analysis!of!HfO2!band!alignment!with!high!mobility!
semiconductors”!E"MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
!
M.!Perego,!A.!Molle,!G.!Seguini,!M.!Fanciulli!“Electronic!configuration!of!Gd2O3!heterojunctions”,!E"
MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
!
N.Huby,!!G.Tallarida,!M.!Kutrzeba,!S.!Ferrari,!!E.Guziewicz,!%.!Wachnicki,!M.!Godlewski,!“New!selector!
based!on!zinc!oxide!grown!by!low!temperature!atomic!layer!deposition!for!vertically!stacked!non!
volatile!memory!devices”,!E"MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
16!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
E.!Katsia,!G.!Tallarida,!S.!Ferrari,!E.!Bundgaard,!R.!Søndergaard,!F.C.!Krebs,!“Integration!of!organic!
based!Schottky!junctions!for!crossbar!non!volatile!memory!applications”,!E"MRS!2008!Spring!
Meeting,!Strasbourg!(France),!May!2008.!
!
E.!Prati,!C.!Amabile,!“Effects!of!SRR!density!on!the!effective!permeability”,!Meta08,!Marrakesh!
(Morocco),!May!2008.!
!
A.!Molle,!M.!Perego,!M.!Fanciulli,!“Epitaxial!Gd2O3!thin!films!on!Ge:!thermodynamic!stability!and!
electronic!band!structure”,!MRS!Spring!Meeting!2008,!S.!Francisco!(CA),!USA,!April!2008.!
!
M.!Perego,!G.!Seguini,!S.!Spiga,!M.!Fanciulli!“HfO2/GaAs!heterojunction;!reconstruction!of!the!band!
structure!by!IPE!and!artifact"free!XPS!analysis”,!MRS!Spring!Meeting!2008,!San!Francisco!(CA),!USA,!
April!(2008).!
"
!
POSTER"Presentations"
"
R.!Mantovan,!A.!Lamperti,!M.!Georgieva,!and!M.!Fanciulli,!“ALD/CVD!synthesis!of!thin!films!for!
spintronics”,!Transalp’Nano!2008,!Lyon!(France)!October!2008.!
!
R.!Mantovan,!M.!Fanciulli,!C.!Wiemer,!A.!Lamperti,!M.!Georgieva,!A.!Goikhman,!N.!Barantcev,!Y.!
Lebedinskii,!and!A.!Zenkevich,!“Application!of!conversion!electron!Mössbauer!!spectroscopy!to!the!
study!of!interfaces!for!spintronics”,!The!Colloquium!50!Years!After!"!The!Mössbauer!Effect!Today!and!
in!the!Future",!Garching!(Germany)!October!2008.!
!
L.!Lamagna,!E.!Cianci!and!M.!Fanciulli,!“Spectroscopic!ellipsometry!characterization!of!oxides!grown!
using!atomic!layer!deposition!for!applications!in!nanoelectronics!and!spintronics”,!1st!European!
School!on!Spectroscopic!Ellipsometry,!Ostuni!(Italy),!September!2008.!
!
A.!Lamperti,!R.!Mantovan,!M.!Georgieva,!M.!Fanciulli,!“Thin!films!and!multilayers!for!spintronics!
deposited!by!a!CVD"ALD!process”,!Spin!Momentum!Transfer!Workshop,!Krakow!(Poland),!September!
2008.!
!
S.Baldovino,!M.!Fanciulli!“Investigation!of!semiconductor/oxide!interfaces!by!electrically!detected!
magnetic!resonance!techniques”,!Summer!School!on!Advanced!techniques!in!EPR;!St.!Andrews!
College!(England),!August!!2008.!
!
G.!Congedo,!S.!Spiga,!L.!Lamagna!and!M.!Fanciulli,!“Electrical!characterization!of!Zirconium!Oxide!and!
Lanthanum!Aluminate!for!applications!in!non!volatile!memories”,!MIGAS!'08!Summer!School!on!
advanced!microelectronics,!Autrans/Grenoble!(France),!July!2008.!
!
A.!Vellei,!M.!Fanciulli,!“Electron!spin!resonance!in!silicon!nanostructures”,!MIGAS!'08!Summer!School!
on!advanced!microelectronics,!Autrans/Grenoble!(France),!July!2008.!
!
!
!
!
17
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
A.!Lamperti,!S.!Spiga,!H.L.!Lu,!C.!Wiemer,!M.!Perego,!E.!Cianci,!M.!Alia,!M.!Fanciulli,!“Study!of!the!
interfaces!in!resistive!switching!NiO!thin!films!coupled!with!different!electrodes!(Si,!Ni,!Pt,!W)!
deposited!by!ALD!and!e"beam”!E"MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
!
L.!Lamagna,!D.!Tsoutsou,!G.!Scarel,!A.!Debernardi,!S.!Spiga,!S.!C.!Capelli,!S.!N.!Volkos,!M.!Alia,!S.!
Schamm,!P.!E.!Coulon,!M.!Fanciulli,!“Infrared!spectroscopy!and!X"ray!diffraction!studies!on!the!
crystallographic!evolution!of!La2O3!films!upon!annealing!temperature”,!E"MRS!2008!Spring!Meeting,!
Strasbourg!(France),!May!2008.!
!
G.Tallarida,!S.!Ferrari,!N.Huby,!E.Katsia,!R.!Bez,!A.!Pirovano,!A.!Redaelli!,!P.Lugli,!G.Csaba,!C.!Erlen,!
F.Krebs,!E.!Bundgaard,!R.Søndergaard,!K.!Troensegaard!Nielsen,!M.!Godlewski,!E.!Guziewicz,!K.!
Kopalko,!A.!Szczerbakow,!“VERSATILE:!Vertically!stacked!memory!cells!based!on!hybrid!
organic/inorganic!heterojunctions”,E"MRS!2008!Spring!Meeting,!Strasbourg!(France),!May!2008.!
!
2007"
"
!
INVITED"Talks"
"
A.!Debernardi,!“Simulation!of!nanoscale!systems!without!adjustable!parameters:!from!ab!
initio!calculations!to!models”,!workshop!on!Modelling!and!computational!methods!in!fluid!dynamics!
and!material!!science:!!towards!the!challenge!of!the!nanoscales”,!Bressanone!(Italy).!December!2007.!
!
E.!Prati,!C.!Amabile,!F.!Costa,!A.!Monorchio,!“Analysis!and!design!of!coupled!frequency!selective!
surfaces!as!a!novel!kind!of!waveguide!filter”,!Metamaterials!2007,!Roma!(Italy),!October!2007.!
!
M.!Fanciulli,!S.!Cocco,!L.!Lamagna,!“In"situ!investigation!of!the!early!stages!of!the!growth!by!ALD!of!
high"k!dielectrics!on!silicon!and!high!mobility"substrates”,!E"MRS!2007!Fall!Meeting,!Warsaw!
(Poland),!September!2007.!
!
S.!Ferrari,!“Atomic!Layer!Deposited!Al!2O!3!on!semiconducting!polymers!for!plastic!electronics”,!E"
MRS!2007!Fall!Meeting,!Warsaw!(Poland),!September!2007.!
!
C.!Wiemer,!“CHEmical!vapor!deposition!of!chalcogenide!MAterials!for!Phase!change!memories!–!
CHEMAPH”,!International!Workshop!on!emerging!non!volatile!memeories!–!ESSDERC!Conference,!
Munich!(Germany),!September!2007.!
!
S.!Ferrari,!“Overview!of!the!VERSATILE!project”,!International!Workshop!on!emerging!non!volatile!
memeories!–!ESSDERC!Conference,!Munich!(Germany),!September!2007.!
!
A.!Molle,!M.!N.!K.!Bhuiyan,!G.!Tallarida,!C.!Wiemer,!M.!Perego,!M.!Fanciulli,!“Structural!and!
compositional!diagnostic!of!high"#!Gd2O3!thin!films!grown!by!molecular!beam!epitaxy”,!MRC!Oxide!
Workshop,!IBM!Zurich!Research!Center,!Rueschlikon!(Switzerland),!June!2007.!
!
!
!
18!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
G.!Scarel,!C.!Wiemer,!S.!Spiga,!S.!Baldovino,!H.L.!Lu,!M.!Perego.!M.!Fanciulli,!“Growth!and!properties!
of!oxides!deposited!by!ALD!using!ozone!as!oxygen!source”,!7th!International!Conference!on!Atomic!
Layer!Deposition,!San!Diego,!CA!(USA),!June!2007.!
!
M.!Perego,!“Profili!di!profondità!in!matrici!complesse!mediante!TOF"SIMS:!uso!dell'intero!spettro!di!
massa!come!strumento!di!analisi”,!Università!degli!Studi!di!Padova,!Padova!(Italy),!!June!2007.!
!
!
ORAL"Presentations"
"
R.!Mantovan,!M.!Fanciulli,!H.P.!Gunnlaugsson,!G.Weyer,!R.!Sielemann,!D.!Naidoo,!K.!Bharuth"Ram,!S.!
Olafsson,!G.!Langouche,!K.!Johnston,!“Mössbauer!studies!of!dilute!magnetic!semiconductors”,!ISOLDE!
Workshop,!CERN,!Geneva!(Switzerland),!December!2007.!
!
A.Debernardi,!M.!Fanciulli,!“The!magnetic!interaction!of!Fe!doped!ZnO!with!intrinsic!defects:!
a!first!principles!study”,!ICDS!24,!24th!International!Conference!on!Defects!in!Semiconductors!(ICDS),!
Albuquerque,!New!Mexico!(USA),!July!2007.!
!
A.!Molle,!M.!N.!K.!Bhuiyan,!G.!Tallarida,!C.!Wiemer,!M.!Perego,!G.!Pavia,!M.!Fanciulli,“Structural!and!
interfacial!properties!of!crystalline!Gd2O3!thin!filmsgrown!on!Ge(001)!substrates!by!molecular!beam!
epitaxy”,!IVC"17/ICSS"13!and!ICN+T2007!Meeting,!Stockholm!(Sweden),!July!2007.!
!
L.!Lamagna,!G.!Scarel!and!M.!Fanciulli,!G.!Pavia,!“Limitation!of!interfacial!layer!development!in!thin!
Al2O3!films!grown!by!ALD!on!Si(100),!Ge(100)!and!GaAs(100)”,!7th!International!Conference!on!Atomic!
Layer!Deposition,!San!Diego,!CA!(USA),!June!2007.!
!
A.Debernardi,!M.!Fanciulli,!“Quantum!confinement!and!role!of!dimension!in!silicon!nanostructures!
doped!with!P:!a!parameter"free!calculation!of!Stark!effect”,!E"MRS!2008!Spring!Meeting,!Strasbourg!
(France),!May!2007.!
!
M.!Longo,!R.!Magnanini,!L.!Tarricone,!E.!Gombia,!“GaAs/InGaP!MQW’s!for!high!efficiency!solar!cells”,!
E"MRS!2007!Spring!Meeting,!Strasbourg!(France),!May!2007.!
!
S.Spiga,!C.!Wiemer,!G.!Tallarida,!S.!Ferrari,!M.!Fanciulli,!C.!M.!Compagnoni,!A.!Spinelli,!A.!Lacaita,!A.!
Bianchini,!D.!Caputo,!“Structural!and!electrical!properties!of!HfO2!films!grown!by!atomic!layer!
deposition!on!Si”,!FIRB!Workshop,!Milan!(Italy),!!March!2007.!
!
M.!Perego,!J.!Llamoja!Curi,!G.!Tallarida,!!C.!Wiemer,!S.!Spiga,!M.!Fanciulli,!“Gold!nanoparticles!
embedded!in!metal/oxide/semiconductor!structures!for!application!in!non"volatile!memory”,!
SEMINANO!2007,!Bad!Honnef!(Germany),!June!(2007).!
!
!
!
!
!
!
!
19
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!
!!!REPORT!ADDENDUM!2007!2008!
POSTER"Presentations"
"
R.!Mantovan,!M.!Georgieva,!M.!Fanciulli,!A.!Goikhman,!N.!Barantcev,!Y.!Lebedinskii,!A.!Zenkevich!
“Synthesis!and!characterization!of!Fe3Si/SiO2!structures!for!spintronics”,!Third!Seeheim!Conference!
on!Magnetism,!Frankfurt!(Germany),!August!2007.!
!
R.!Mantovan,!C.!Wiemer,!A.!Lamperti,!A.!Zenkevich,!Yu.!Lebedinski,!M.!Fanciulli,!“Reduction!of!the!
intermixing!at!the!iron/oxide!interfaces!upon!rapid!thermal!annealing”,!Third!Seeheim!Conference!on!
Magnetism,!Frankfurt!(Germany),!August!2007.!
!
R.!Mantovan,!M.!Georgieva,!M.!Perego,!H.L.!Lu,!S.!Cocco,!A.!Zenkevich,!G.!Scarel,!M.!Fanciulli,!
"Atomic!layer!deposition!of!magnetic!thin!films",!Workshop!on!Smoothing!and!Characterization!of!
Magnetic!Films!for!Advanced!Devices,!Krakow,!Poland,!July!2007.!
!
B.!Fraboni,!T.!Cesca,!A.!Gasparotto,!G.!Mattei,!F.!Boscherini,!G.Impellizzeri,!F.!Priolo,!M.!Longo,!L.!
Tarricone,!“Electrical!and!structural!characterization!of!Fe!implanted!GaInP”,!!
ICDS!24!"!24th!International!Conference!on!Defects!in!Semiconductors,!Albuquerque,!NM!(USA),!July!
2007.!
!
M.!Longo,!R.!Magnanini,!A.!Parisini,!L.!Tarricone,!C.!Bocchi,!F.!Germini,!L.!Lazzarini,!L.!Nasi,!“Structural!
and!optical!analysis!of!MOVPE"grown!InGaP/GaAs!superlattices”,!EW"MOVPE!2007,!12th!European!
Workshop!on!Metalorganic!Vapour!Phase!Epitaxy,!Bratislava!(Slovakia),!June!2007.!
!
A.!Parisini,!E.!Gombia,!C.!Ghezzi,!L.!Tarricone,!M.!Longo,!“Admittance!Spectroscopy!of!GaAs/InGaP!
MQW!Structures”,!E"MRS!2007!Spring!Meeting,!Strasbourg!(France),!May!2007.!!
!
20!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
""""""""""""""""""""""""""""Organization"of"conferences__"
!
! Symposium!on!“Materials!and!emerging!technologies!for!non"volatile"memory!devices”!
Part!of!the!E"MRS!2008!Spring!Meeting!!
26!"!30!May!2008,!Strasbourg!(France)!
Organizer:!Marco!Fanciulli,!Dirk!Wouters,"Mathias!Wuttig,!Mauro!Alessandri!
!
Symposium!on!“Material!Science!for!Quantum!Information!Processing!Technologies”!!
Part!of!the!MRS!2008!Fall!Meeting!1!"!3!December!2008,!Boston,!MA!(USA)!
Organizer:!Marco!Fanciulli,!Mark!Eriksson,!John!Martinis!
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""""""""""""""""""""""""""""""""""""""""""""""""""""""""""""""""""Patents__"
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National"
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INFM!and!Università!degli!Studi!di!Pisa,!"Sistema!e!procedimento!per!la!misurazione!della!
permettività!dielettrica!e!della!permeabilità!magnetica!di!un!materiale!in!riflessione/trasmissione"!
(System!and!procedure!for!the!measurement!of!electric!and!magnetic!permittivity!of!a!material!in!
reflection/transmission),!n.!TO2008A000687,!19.09.2008!!
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21
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
""""""""""""""""""""""""""""""""""""""""""""""Research"Projects__"
Industrial"research"projects"
!
"
!
MDM!NUMONYX" 2008"–" Advanced"materials" and" characterization" for" the" 45!32"nm" technology"
nodes"non!volatile"memory"devices"and"beyond"(2008)"
Objectives:!The!project!activity,!coherently!linked!with!all!the!other!activities!and!expertise!of!the!
CNR"INFM! MDM! Lab.,! takes! into! consideration! the! specific! needs! of! Numonyx! and! it! is! based! on!
the!requirements!to!reach!the!32!nm!technology!node!with!reference!to!the!Front!End!Processes,!
Interconnect,! and! Emerging! Research! Devices! sections! of! the! International! Semiconductor!
Roadmap! for! Semiconductors.! The! research! program! is! organized! in! the! following! activities:! (i)!
Investigation!of!materials!for!charge!trapping!memory!devices!for!the!32!nm!technology!node;!(ii)!
Growth!and!characterization!of!high"#!dielectric!for!charge!trapping!memories!beyond!the!32!nm!
technology! node;! (iii)! Stress! characterization! in! Silicon! by! Raman! spectroscopy;! (iv)! Materials! for!
phase"change!memories;!(v)!Evaluation!of!spin"on!dielectric!SiO2!for!advanced!STI!filling.!
Coordinator:!M.!Fanciulli!
MDM!STM" 2007" –" Growth" and" characterization" of" materials" for" advanced" microelectronic"
devices,"including"non!volatile"memory"(2007)"
Objectives:!The!project!activity,!coherently!linked!with!all!the!other!activities!and!expertise!of!the!
CNR"MDM! Lab.,! considers! the! needs! of! STM! in! matching! the! requirements! to! reach! the! 45! nm!
technology!node!with!reference!to!the!Front!End!Processes,!Interconnect,!and!Emerging!Research!
Devices!sections!of!the!International!Semiconductor!Roadmap!for!Semiconductors,!2003!Edition.!
The! research! program! is! organized! in! the! following! activities:! (i)! Atomic! Layer! Deposition! and!
characterization! of! high"#! dielectrics! for! NVM;! (ii)! Characterization! of! high"#! dielectrics! for! NVM!
deposited!by!STM;!(iii)! Electrical! characterization! of! high"dielectric! constant! inter"poly! dielectrics;!
(iv)! Stress! monitoring! in! manufacturing! processes;! (v)! Low"k! characterization! of! boro"phospho"
silicate,! phosphor"silicate! and! boro"silicate! glasses! sodium! contamination;! (vi)! Characterization! of!
materials!for!interconnects;!(vii)!2D!junction!imaging;!(viii)!Oxides!for!resistive!switching!NVM;!(ix)!
Materials!for!phase!change!memories!
Coordinator:!M.!Fanciulli!
!
National"research"projects"
!
MIUR"FIRB"–"Innovative"technologies"for"the"development"of"high"density"non"volatile"memories"
(2007!2010)"
Objectives:!The!project!aims!to!develop!the!technologies!for!the!next!generation!high!density!non!
volatile! memories,! looking! both! at! the! evolution! of! the! dominant! technology! based! on! trapped!
charge!in!a!floating!gate!and!at!the!development!of!emerging!technologies,!such!as!phase!change!
based!on!calcogenides!or!charge!trapping!in!a!nitride!layer.!In!details,!the!project!goals!are:!(i)!the!
integration! of! high"#! dielectrics! in! Flash! technology! at! 45! nm,! with! a! complete! and! detailed!
understanding! of! the! physics! behind! new! high"#! materials,! optimization! of! growth! processes,!
manufacturing! of! test! structures! and! their! characterization! and! modeling,! integration! in! CMOS!
advanced!technology;!(ii)!the!analysis!of!functioning!and!reliability!of!phase!change!memory!cells!at!
45nm,!with!cell! and! array!characterization,!numerical!models!and!circuit!solutions,!looking!at!the!
22!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
next! 32! nm! node;! (iii)! the! development! of! innovative! technologies! for! Flash! memories! at! 45! nm!
based!on!nitrides,!with!the!study!of!the!feasibility!of!SONOS!based!structures,!where!the!charge!is!
stored! in! a! nitride! layer! sandwiched! between! tunneling! barriers,! through! the! deposition! and!
characterization!of!different!dielectrics!and!gate!electrodes!and!the!realization!of!functioning!cells;!
(iv)!the!comparative!evaluation!of!the!studied!technologies!to!match!the!32!nn!node,!contributing!
to!define!the!optimal!structure!and!architecture!for!the!memory!at!the!32!nm!technology!node."
Partners:"IUNET,!Università!di!Pavia,!CNR"INFM!MDM!Lab.,!IMM,!Numonyx.!!
Role:"Partner,"CNR"INFM"MDM!Lab.!responsible:!M.!Fanciulli!
!
!
!
!
!
CINECA"–"First"principles"calculation"of"materials"for"spintronics"and"nanoelectronic"devices"2"
(2007)""
Objectives:! The! project! aims! at! the! study! of! the! band! alignment! in! GaN/AlN:Mn!
heterostructures! to! identify! a! junction! capable! to! inject! spin"polarized! electrons! in! a!
semiconductor.! We! predicted! that! this! heterostructure! exhibits! half"metallic! properties,! which!
make! it! suitable! as! a! spin! injector.! Further,! we! study! the! doping! of! semi"conducting!!
(or! insulating)! oxides! with! magnetic! elements! to! find! materials! that! are! both! semiconductor! and!
ferromagnetic!at!room!temperature!and!to!understand!how!their!magnetization!is!affected!by!the!
presence! of! defects.! The! final! target! is! the! design! of! a! spintronic! device!
whose!properties!can!be!tailored!according!to!the!needs!of!the!electronic!industry.!The!results!are!
compared!with!the!experimental!data!obtained!at!CERN!within!the!ISOLDE!collaboration.!
Role:!Coordinator!(A.!Debernardi)!
!
CARIPLO"MATRIX"–"Bi!dimensional"matrixes"of"nanocrystals"of"semiconductor"and"metals"(2007!
2009)""
Objectives:!The!project!aims!at!the!development!of!lithographic!process!at!nanoscale!and!low!cost!
by!using!block!co"polymers!to!control!the!distribution!of!nanocrystals!in!semiconductors!and!metals!
in! a! planar! geometry,! limiting! the! size! dispersion.! Further,! the! project! aims! to! make! use! of! the!
competencies! gained! in! the! synthesis! of! such! nanostructures! to! study! their! electric! properties! in!
simple!MOS!devices.!
Role:!Coordinator!(M.!Perego)!
!
INFM"NANO!GAMES"–!NANOparticles"self"assemblinG"by"combinAtion"of"top!down"ad"bottoM!up"
approachES"(2007!2009)!!
Objectives:! The! project! mainly! aims! at! the! growth! and! manipulation! of! 2! dimensional! arrays! of!
silicon! nano"particles! in! different! oxide! matrices! by! means! of! templated"self"! assembly,! i.e.!
combining! “bottom! up”! self! assembly! of! block! copolymers! with! “top"down”! patterned! templates!
fabricated!by!conventional!lithography."
Role:"!Coordinator!(M.Perego)!
!
!
!
!
!
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23
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
European"projects"
!
CYBERRAT"–"A"Brian!Chip"Interface"for"High!Resolution"Bi!Directional"Communication"(2008!
2010)!
Objective:" The! project! aims! at! the! creation! of! an! innovative! interface! between! a! semiconductor!
chip! and! the! brain! of! a! living! rat! allowing! for! a! powerful! bi"directional! electrical! communication!
with! high! spatiotemporal! resolution.! A! CMOS! chip! featuring! stimulation! and! recording! sites!
integrated!at!high!density!(spaced!only!a!few!micrometers)!will!be!implanted!in!several!brain!areas,!
either!independently!or!simultaneously,!thus!obtaining!an!unprecedented!control!and!recording!of!
neuronal!activity!in!the!mammalian!brain.!Thanks!to!high"density!integration,!a!functional!electrical!
imaging!and!stimulation!of!neuronal!networks!within!the!cortex!and!nuclei!will!be!performed!at!a!
resolution!close!to!the!single!neuron!and!neuronal!network!information!processing!will!be!explored!
in!unprecedented!detail.!The!project!will!focus!on!the!sensory"motor!circuit!regulating!coordinated!
voluntary!movement,!although!the!choice!of!this!neurobiological!context,!by!exploring!interfacing!
with! the!main! cortical! and!nuclear!structures! of!the! brain,! ensures! that!the! approach! will! have! a!
general!applicability!to!several!other!brain!circuits!such!as,!for!example,!those!underlying!vision!and!
hearing.!
Partners:"Dept.!of!Anatomy!and!Human!Physiology,"NeuroChip"Laboratory"!University!of!Padova,!
Padova,!Italy;!Max!Planck!Institut!for!Biochemistry,!Martinsried,!Germany;!CNR"INFM,!Laboratorio!
Nazionale!MDM,!Agrate!Brianza,!Italy;!Institute!of!Physiology,!CNISM"University!of!Pavia,!Pavia,!
Italy;!Bar"Ilan!University!,!Ramat!Gan,!Israel."
Role:"Partner,!CNR"INFM!MDM!Lab.!responsible:!M.!Fanciulli!
!
!
24!
AFSID"–"Atomic"Functionalities"on"Silicon"Devices"(2008!2011)!
Objectives:" The! project! aims! at! taking! advantage! of! a! fundamental! figure"of"merit! of! the! CMOS!
transistors,! the! doping! modulation,! to! propose! new! functionalities! arising! from! the! control! of! a!
single!charge!and!spin!on!individual!dopants!in!silicon.!An!important!advantage!of!using!dopants!in!
silicon! is! that! the! atoms! are! naturally! embedded! in! the! silicon! device.! The! devices! will! be!
manufactured! within! a! mature! technology! on! state"of"the"art! CMOS! platforms.! Confident! that!
placing! a! single! dopant! at! the! right! place! is! realistic! in! the! future,! the! project! will! study! single!
atomic! devices,! either! real! (i.e.! dopant)! or! artificial! (i.e.! quantum! dots),! with! a! manageable!
dispersion! by! considering! three! cases:! devices! without! dopant,! devices! with! a! targeted!
concentration!of!one!dopant!and!devices!with!many!dopants.!Devices!without!dopant!will!be!based!
on!ultimate!silicon!SET.!A!targeted!size!of!10!nm!is!realistic,!allowing!operation!at!low!temperature!
(but! much! above! 4.2K).! These! devices! are! fully! controlled! and! scalable.! Devices! with! one! dopant!
(SAT=! single! atom! transistors)! or! two! dopants! (TAT=! twin! atom! transistors)! will! be! identified! and!
selected!from!their!electrical!characteristics!and!then!studied!thoroughly.!Relatively!high!operating!
temperatures! up! to! room! temperature! are! expected! using! donors! with! large! ionization! energy.!
These!devices!are!the!smallest!possible!switches!using!the!silicon!technology.!Because!our!ultimate!
SET!presents!the!decisive!advantage! of!an! immediate! integration!in! the!CMOS,! the!AFSID!project!
will!prove!the!validity!of!hybrid!SET"CMOS!approach!by!building!a!SET"FET!hybrid!device!on!chip.!
Partners:"C.E.A.!Grenoble,!France;!Technische!Universiteit!Delft,!Holland;!University!of!Melbourne,!
Australia;!Hitachi,!United!Kingdom;!CNR"INFM,!Laboratorio!Nazionale!MDM,!Agrate!Brianza,!Italy;!
Eberhard!Karls!Universität!Tübingen,!Germany."
Role:"Partner,!CNR"INFM!MDM!Lab.!responsible:!M.!Fanciulli!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!
!!!REPORT!ADDENDUM!2007!2008!
GOSSAMER"–"Gigascale"Oriented"Solid"State"flAsh"Memory"for"EuRope"(2008!2010)"
Objectives:" The! project! aims! at!the! development! of!very! high!density!Non! Volatile! Memories! for!
mass!storage!applications!down!to!the!2X!nm!technology!node.!The!dominant!technology!for!this!
application! is! the! floating! gate! NAND! memory;! however! severe! technological! roadblocks! are!
limiting!further!scaling! beyond!the! 45"32!nm!node.!Memory!devices!based! on!charge! trapping! in!
dielectric! layers! represents! a! viable! alternative! to! floating! gate! devices.! On! the! other! hand,! the!
integration! of! the! several! new! materials! requested! for! these! alternative! devices! at! the! target!
technology!node!and!with!an!acceptable!trade"off!between!functionality!and!reliability!is!a!major!
challenge.! The! project! will! address! material! development,! cell! architecture,! modeling! of! material!
properties,! trapping! and! conduction! behavior! in! the! dielectrics,! metal! gate! materials.! The! final!
demonstrator,! fabricated! by! two! major! European! semiconductor! manufacturers,! will! be! a! fully!
working!memory!array!in!the!multi"gigabit!range!and!in!the!36"28!nm!technology!node.!Technology!
options! for! higher! integration! densities! will! be! also! investigated! in! collaboration! with! the! public!
research!partners!
Partners:" Numonyx,! Agrate! Brianza"Milano! (Italy);! Active! Technologies,! Ferrara! (Italy);! Qimonda,!
Dresden!(Germany);!ASM"International,!Bilthoven!(The!Netherlands);!IMEC,!Leuven!(Belgium),!CNR"
INFM,! Laboratorio! Nazionale! MDM,! Agrate! Brianza,! Italy;! Tyndall! National! Institute,! University!
College,!Cork!(Ireland),!IUNET!(Italy),!University!Freiberg,!Freiberg!(Germany);!Fraunhofer!Institute!
CNT,! Dresden! (Germany);! University! Braunschweig,! Braunschweig! (Germany);! ALMA! Consulting!
Group,!Gennevilliers!cédex!(France);!Jordan!Valley,!Migdal!Ha'Emek!(Israel).!
Role:"Partner,!CNR"INFM!MDM!Lab.!responsible:!S.Spiga"
"
Other"international"projects"
!
!
!
ATHOS"–"Advanced"gate"stacks"for"high!mobility"semiconductors"(2007!2008)!
Objectives:" The! main! objective! of! this! project! is! the! development! of! processes! and! materials! for!
the!fabrication!of!advanced!gate!stacks!on!high"mobility!GaAs!and!InGaAs!substrates!for!the!32!nm!
technology!node!and!beyond.!The!activity!is!divided!in!three!mainstreams:!the!in!situ!cleaning!of!
GaAs! and! InGaAs! surfaces,! the! surface! passivation,! and! the! high"#! thin! film! deposition! and!
advanced!characterization.!
Partners:"IMEC,!Leuven!(Belgium);!CNR"INFM,!Laboratorio!Nazionale!MDM,!Agrate!Brianza,!Italy."
Role:"Partner,!CNR"INFM!MDM!Lab.!responsible:!S.!Spiga;!Partner,!IMEC!Lab.!responsible:!Dr.!Guy!
Brammertz!
"
MAE"–"Italia!Francia"collaborating"exchange"project"(2007!2008)!
Objectives:! The! project! objective! is! to! allow! researchers! from! CNR"MDM! Lab.! and! Laboratoire!
Trefle,!University!of!Bordeaux!to!interact!on!the!studies!of!thermal!characterization!of!materials!for!
PCM!cells,!including!short!visiting!periods.!
Partners:! University! of! Bordeaux,! Bordeaux! (France);! CNR"INFM,! Laboratorio! Nazionale! MDM,!
Agrate!Brianza,!Italy.!
Role:! Partner,! CNR"INFM! MDM! Lab.! responsible:! M.! Fanciulli! –! Partner,! Université! de! Bordeaux!
responsible:!!J.!L.!Battaglia.!
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CNR!INFM!LABORATORIO!NAZIONALE!MDM!
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"
26!
!
!!!REPORT!ADDENDUM!2007!2008!
MDM!"MEPhI"(Moscow)"Bilateral"Project"(2007!2008)!
Objectives:! The! project! objectives! are:! (i)! the! development! of! the! physical! basis! for! non"volatile!
random! access! memory! devices! based! on! magnetic! tunnel! junctions! formed! in!
ferromagnetic/isolator/ferromagnetic! stacks;! (ii)! the! development! of! technological! basis! for! the!
manufacturing! of! novel! metal"oxide"semiconductor! functional! structures! applicable! in!
nanoelectronic!logic!devices.!
Partners:!Department!of!Physics!of!Solids,!Moscow!Engineering!Physics!Institute,!Moscow!(Russia);!
CNR"INFM!MDM!Lab.,!Agrate!Brianza"Milano,!Italy.!
Role:! Partner,! CNR"INFM! MDM! Lab.! responsible:! M.! Fanciulli! –! Partner,! MEPHI! responsible:! ! A.!
Zenkevich.!
!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
""""""""""""""""""""""New"International"and"National"Collaborations__"
International"Collaborations"
Industrial"
!
!
!
ASM!Microchemistry,!Helsinki,!Finland!
Qimonda!AG,!Dresden,!Germany!
NXP,!Eindhoven,!The!Netherlands!
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Academic"
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!
!
RTWH,!Aachen,!Germany!
University!of!Liverpool,!United!Kingdom!
University!of!Helsinski,!Finland!
Institute!for!Nanoelectronics,!Technical!University!of!Munich,!Germany!
CNRS,!I2NP,!Toulon"Marseille,!France!
!
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National"Collaborations"
Industrial"
!
NUMONYX,!Agrate!Brianza,!Italy!
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Academic"
!
!
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Dipartimento!di!Fisica,!Università!di!Pavia!
IMM!"!Istituto!per!la!Microelettronica!e!Microsistemi!
IUNET"!Consorzio!Nazionale!Interuniversitario!per!la!Nanoelettronica!
!
!
27
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
!!!REPORT!ADDENDUM!2007!2008!
""""""""""""""""""""""""""""""""""""""""New"Facilities"(installed"in"2007!2008)__"
Advanced"Materials"Growth"and"Process"Facilities"
! Sputtering!deposition!tool!(first!chamber!of!a!cluster!tool)!!
! Two!wet!benches!!for!etching!
! ALD"CVD!reactor!for!the!deposition!of!ferromagnetic!thin!films!
"
Characterization"Facilities"
! Monochromatic!X"ray!Photoelectron!Spectroscopy!(XPS)!!
! Cryogenic!Hall!Effect!Tool!(mobility!and!carrier!density,!magnetoresistance)!Temperature!range:!T!=!
4.5"300!K!–!Magnetic!field!H!=!0"1!T.!
! Electrical!resistivity!using!the!Van!der!Pauw!method!
! Thermal!conductivity!by!the!3$!method!
"
"
28!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
1."Scaling"issues"in"CMOS"logic"
beyond"Si!based"technology"
The! continued! scaling! of! complementary! metal!
oxide! semiconductor! (CMOS)! technologies! has!
pushed! the! Si"SiO2! system! to! its! very! limits! and!
has! led! to! the! consideration! of! a! number! of!
alternative! high"#! oxides,! metal! gates! and! high!
mobility! substrates! (Ge! or! III"V! compounds)! as!
gate! stacks! and! channel! materials,! respectively.!
In! addition,! the! extreme! shrinking! of! the! device!
feature!size!will!further!imposes!a!crossover!to!a!
new!concept!of!the!device!architecture!including!
the! implementation! of! nanostructures! such! as!
nanowires!or!more!exotic!solutions.!
Only! the! electrical! behavior! of! the! new! system!!
will! determine! its! usefulness! in! future! CMOS!
generations,!therefore!the!study!of!the!electrical!
properties! of! high"#! gate! insulator,! the!
introduction! of! metal! gates! and! the! reliability! of!
the!high"mobility!substrates!as!channel!materials!
are! crucial! crosspoints.! Of! all! the! semiconductor!
materials,! Ge! and! III"V! semiconductors! offer! the!
greatest! potential! for! integration! into! CMOS!
technology! to! achieve! high! mobility! for! the! hole!
and! the! electron! transport,! respectively.! Even!
though! Ge,! GaAs! and! InGaAs! mobilities! are!
advantageous,! the! interface! between! these!
materials! and! high"#! oxides! still! suffers! from! an!
unacceptably! low! electrical! quality! so! that! the!
search! of! a! good! electrical! passivation! for! high"
mobility! surfaces! is! up! to! now! an! outstanding!
issue.! In! this! context,! MDM! is! thoroughly!
involved! in! several! activities! concerning:! the!
atomic! layer! deposition! of! scalable! rare! earth!
oxides!on!Si!substrates!(within!the!framework!of!
the! REALISE! European! Project),! the! advanced!
characterization! of! metal! gate! stack! on! high"#!
oxides! (within! the! framework! of! FOREMOST!
Project)! and! of! the! band! alignment! of! high"#!
oxides! against! high"mobility! substrates,! the!
molecular! beam! deposition! of! high"#! on!
passivated! Ge! substrates,! the! search! of! a!
passivation! strategy! for! III"V! compound! surfaces!
!
!!!REPORT!ADDENDUM!2007!2008!
(within! the! framework! of! the! ATHOS!
collaboration! project! with! IMEC),! the!
identification!of!the!defect!microstructure!at!the!
high"#! oxide/semiconductor! interfaces,! and! the!
microwave!induced!dependent!transport!through!
single!donors!in!nanoscaled!devices.!
!
Atomic"layer"deposition"of"high!#"dielectrics"
for"ultra!scaled"CMOS"and"beyond!Si"
technology"
The! continuous! scaling! down! of! planar! CMOS!
requires! the! identification! of! new! materials! with!
a!high!dielectric!constant!(#).!MDM!carried!out!a!
wide! activity! based! on! the! atomic! layer!
deposition!(ALD)!of!novel!high"#!oxides!on!silicon!
but! also! on! high"mobility! semiconductor!
substrates! such! as! germanium! and! gallium!
arsenide.! In! particular,! the! chemical! and!
interfacial! properties! of! Lu"! based! oxides! on! Si!
has! been! widely! investigated! [1,2].! The! effect! of!
thermal! treatments! on! structural! and! interfacial!
properties!of!ultra"thin!films!of!Lu2O3!grown!on!Si!
[3,4]! was! also! evaluated.! Within! the! framework!
of! the! European! project! REALISE! particular!
attention!has!been!dedicated!to!rare!earth!oxide!
films! such! those! based! on! lanthanum! like! La2O3!
[5]! and! the! ternary! compound! LaZrO! [6].!
Properties! of! those! materials! deposited! on!
Si(100)! and! also! on! Ge(100)! were! evaluated! by!
means! of! X"ray! analysis,! transmission! electron!
microscopy,!
chemical!
and!
electrical!
characterization.! In! the! special! case! of! ternary!
phases! where! the! rare! earth! element! was!
coupled!with!a!prominent!transition!metal!oxide,!
the! peculiar! structural! properties! of! the! high"#!
dielectric! made! these! oxides! promising! for! the!
implementation!in!novel!CMOS!devices.!!
!
Interface"study"in"metal!high!#"gate"stack""
The! scaling! of! logic! devices! includes! the!
replacement! of! conventional! SiO2/Poly"Si! gate!
with! the! alternative! high"#! material/metal! gate!
couples.! MDM,! within! the! framework! of! the!
FOREMOST! project,! has! developed! an! intense!
29
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
characterization! activity! on! HfO2/TiN! and!
HfO2/TaN! [7,8].! The! combination! of! X"ray!
techniques!(X"ray!diffraction!and!reflectivity)!and!
Time! of! flight! secondary! ion! mass! spectroscopy,!
has! allowed! us! the! identification! of! possible!
chemical! and! structural! modification! at! the!
nanoscale! responsible! of! variation! of! electrical!
properties! (mobility,! equivalent! oxide! thickness,!
reliability)! evaluated! in! test! devices! at! LETI! and!
ST"Crolles.!!
"
Band"alignment"of"high!#"oxides"and"
semiconductor"substrates"
A! key! issue! for! the! implementation! of! high"#!
materials! as! gate! oxide! is! the! formation! of!
suitable! conduction! and! valence! band! barrier! at!
the! oxide/semiconductor! interface! to! reduce!
leakage!currents.!In!order!to!use!high"#!materials!
in! real! devices,! conduction"! (CBO)! and! valence"!
(VBO)!band!offsets!higher!than!1!eV!are!required!
at!the!dielectric/semiconductor!interface.!During!
the! last! two! years! we! focused! on! the!
investigation! of! the! band! alignment! of! high"#!
materials! (Gd2O3,! HfO2)! with! high! mobility!
substrates! (Ge,! GaAs)! by! means! of! x"ray!
photoelectron! spectroscopy! (XPS)! and! internal!
photoemission! spectroscopy! (IPE).! On! one! hand!
we!investigated!the!effects!of!thermal!treatment!
on! the! band! structure! of! the! Gd2O3/Ge!
heterojunction!showing!that!the!band!structure!is!
very! sensitive! to! variations! of! oxygen! content! in!
the! oxide! film.! [9]! On! the! other! hand! we!
concentrated! on! the! artifacts! induced! by! X"ray!
bombardment! during! XPS! measurements.!
Comparing! XPS! and! IPE! data! on! various!
heterostructures! (HfO2/GaAs! and! HfO2/Ge)! we!
demonstrated! that! the! determination! of! VBO! by!
XPS! requires! a! careful! evaluation! of! differential!
charging! phenomena! and! consequently! a! proper!
recalibration! of! the! energy! scale! to! remove! the!
artifacts!induced!by!X"ray!bombardment.![10]!
!
!
!
!
30!
!
!!!REPORT!ADDENDUM!2007!2008!
Deposition"of"Gd2O3"and"GeO2"films"on"Ge"
for"ultra!scaled"Ge!based"MOS"devices"
The!Gd2O3!is!a!promising!high"#!candidate!as!SiO2!
replacement! as! well! as! gate! dielectric! on! high!
mobility! substrates! in! advanced! electronic!
devices.! Here! an! extensive! study! of! Gd2O3! thin!
films!on!Ge!substrates!is!reported!concerning!the!
structural,! compositional! and! electrical! aspects.!
The!Gd2O3!films!were!grown!both!on!as"prepared!
Ge! surfaces! and! on! GeO2"passivated! Ge(001)!
surfaces! by! molecular! beam! deposition! (MBD)!
using!atomic!oxygen!or!molecular!oxygen!supply!
as! oxidizing! agents! [11,12].! A! special!
consideration! has! been! paid! to! the! optimization!
of! the! GeO2! deposition! process! [13].! The! careful!
tuning! of! the! Gd2O3! growth! parameters! enabled!
us! to! switch! the! oxide! structure! from! the!
amorphous! phase! to! differently! arranged!
epitaxial!phases.!The!electrical!characterization!of!
the! samples! evidences! the! efficacy! of! ultra"thin!
GeO2!as!passivation!layer.!!
!
Interface"engineering"III!V"(GaAs,"
In0.15Ga0.85As)"based"metal"oxide"
semiconductor"structures"
The! integration!of! high"mobility!III"V! compounds!
substrates! such! as! Ga! and! InxGa1"xAs! as! channel!
materials! in! ultra"scaled! logic! devices! is!
necessarily! bounded! to! the! search! for! an!
electrical! surface! passivation.! In! this! context,!
MDM! is! involved! in! a! collaboration! project! with!
IMEC! (Belgium)! to! investigate! possible!
passivation!strategies!of!the!III"V!surfaces!such!as!
the! fabrication! of! GeO2/Ge! double! interface!
layer.!To!this!respect,!the!structural!and!chemical!
details! of! GeO2/Ge! layers! grown! on! GaAs! and!
In0.15Ga0.85As! substrates! by! molecular! beam!
epitaxy! (MBE)! were! studied! in! situ! by! diffraction!
and!spectroscopic!techniques![14].!The!formation!
of! semiconductor"oxygen! bonds! at! the! Ge/GaAs!
and!Ge/In0.15Ga0.85As!interfaces,!which!may!play!a!
decisive! role! in! dictating! the! quality! of! the! Ge!
passivation,! was! assessed! after! using! two!
different! surface! preparations,! namely! Ar!
sputtering! and! atomic! hydrogen! cleaning.!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
Subsequently,!a! Gd2O3!gate! oxide!was!deposited!
onto! the! GeO2/Ge/III"V! structures! by! molecular!
beam! deposition! (MBD)! and! the! electrical!
characterization! was! performed! on! the!
Gd2O3/GeO2/Ge/III"V!multistacks.!
"
Study"of"electrically"active"defects"at"the"
semiconductor/oxide"interface"by"spin"
resonance"techniques"
The! identification! of! the! interface! defects!
affecting! the! transport! properties! is! mandatory!
for!the!choice!of!new!materials!for!future!CMOS!
technology.! To! get! information! about! the! defect!
microstructure,! we! performed! electrically!
detected!
magnetic!
resonance!
(EDMR)!
measurements.! The! EDMR! spectra! highlighted!
the!formation!of!a!Si/SiO2"like!interface!when!the!
high"#! dielectric! is! deposited! on! Si,! whose!
properties! can! be! influenced! by! changing! the! O!
precursor! during! the! ALD! growth! [15].! Despite!
the! belonging! of! the! Ge! to! the! same! periodic!
group! of! Si,! the! oxidation! of! the! Ge! surface!
produces! an! interface! with! features! deeply!
differing! from! those! observed! with! Si.! EDMR!
measurements! proved! the! electrical! activity! of!
the!Ge!dangling!bonds!and!the!deleterious!effect!
of!oxide!defects!on!the!channel!transport.!!!
!
Quantum"transport:"microwave"effects"on"
tunneling"through"single"donors"in"nano!
FETs"
The! availability! of! devices! with! a! Silicon! channel!
of! few! tens! of! nanometers! length! allows! to!
observe! single! donor! atoms! diffused! statistically!
in! the! channel.! Single! donors! in! semiconductor!
nanostructures! represent! a! key! element! to!
develop! quantum! functionalities! in! atomic! scale!
devices.!The!behavior!of!a!Single!Donor!Quantum!
Dot! (SDQD)! under! microwave! irradiation! was!
addressed!
through!
quantum!
transport!
characterization.! The! system! consists! of! an!
isolated! dopant! lying! in! the! channel! of! a! silicon!
decanano!flash!memory,!which!provides!two!well!
resolved! energy! levels! below! the! conduction!
band! edge! attributed! to! a! single! Arsenic! donor.!
!
!
!!!REPORT!ADDENDUM!2007!2008!
Similarly! to! other! quantum! dots! the! microwave!
irradiation! produces! photon! assisted! tunneling!
[16].! Two! different! regimes! of! coupling! are!
observed!as!a!function!of!the!microwave!power.!
We!also!developed!a!new!zero!bias!spectroscopy!
of! excited! levels,! made! possible! by! the! use! of!
microwave! irradiation! at! sufficiently! high! power.!
A!level!crossing!as!a!function!of!a!static!magnetic!
field! was! also! observed! by! means! of! such!
microwave!spectroscopy![17].!
!
!
[1]! G.! Scarel,! C.! Wiemer,! M.! Fanciulli,! I.! L.! Fedushkin,! G.! K.!
Fukin,!G.!A.!Domrachev,!Y.!Lebedinskii,!A.!Zenkevich,!and!G.!
Pavia,!Z.!Anorg.!Allg.!Chem.,!633,!2097_2103!(2007).!
[2]! M.! Malvestuto,! M.! Pedio,! S.! Nannarone,! G.! Pavia,! G.!
Scarel,!M.!Fanciulli,!F.!Boscherini,!J.!Appl.!Phys.,!101,!074104!
1"9!(2007).!
[3]! A.! Zenkevich,! Yu.! Lebedinskii,! S.! Spiga,! C.! Wiemer,! G.!
Scarel,! M.! Fanciulli,! Microelectronic! Engineering! 84,! ! 2263–
2266!(2007).!
[4]! H.L.! Lu,! G.! Scarel,! L.! Lamagna,! M.! Fanciulli,! S.J.! Ding,! D.!
Zhang,!Appl.!Phys.!Lett.,!93!,!152906!(2008).!!
[5]! G.! Scarel,! A.! Debernardi,! D.! Tsoutsou,! S.! Spiga,! S.C.!
Capelli,!L.!Lamagna,!S.N.!Volkos,,!M.!Alia,!M.!Fanciulli,!Appl.!
Phys.!Lett.!91,!102901!(2007).!
[6]!S.!Schamm,!P."E.!Coulon,!S.!Miao,!S.!N.!Volkos,!H."L!Lu,!L.!
Lamagna,! C.! Wiemer,! D.! Tsoutsou,! G.! Scarel,! M.! Fanciulli,!
ECS!Transactions!13,!77"88!(2008).!
[7]! V.! Cosnier,! P.! Besson,! V.! Loup,! L.! Vandroux,! S.! Minoret,!
M.!Casse,!X.!Garros,!J."M.!Pedini,!S.!Lhostis,!K.!Dabertrand,!C.!
Morin,! C.! Wiemer,! M.! Perego,! M.! Fanciulli,! Microelectronic!
Engineering!,!84,!1886!(2007);!
[8]!C.!Gaumer,!E.!Martinez,!S.!Lhostis,!C.!Wiemer,!M.!Perego,!
V.! Loup,! D.! Lafond,! J"M! Fabbri,! ECS! Transactions,! in! press,!
(2008).!
[9]!G.!Seguini,!M.!Perego,!S.!Spiga,!M.!Fanciulli,!A.!Dimoulas,!
Appl.!Phys.!Lett.!91,!192902!(2007).!
[10]!M.!Perego,! A.!Molle,!M.!Fanciulli,!!Appl.!Phys.!Lett.!92,!
042106!(2008).!
[11]! A.! Molle,! S.! Spiga,! M.! N.! K.! Bhuiyan,! G.! Tallarida,! M.!
Perego,!C.!Wiemer,!M.!Fanciulli,!Mat.!Sci,!Semicond.!Proc.!in!
press.!
[12]!A.!Molle,!C.!Wiemer,!M.!N.!K.!Bhuiyan,!G.!Tallarida,!M.!
Fanciulli,!Journal!of!Physics:!Conference!Series! 100,! 042048!
(2008).!
[13]! A.! Molle,! S.! Spiga,! M.! Fanciulli,! J.! Chem.! Phys.! 129,!
011104!(2008).!
[14]! A.! Molle,! S.! Spiga,! A.! Andreozzi,! M.! Fanciulli,! G.!
Brammertz,!M.!Meuris,!!Appl.!Phys.!Lett.!93,!133504!(2008).!
[15]!S.!Baldovino,!S.!Spiga,!G.!Scarel,!M.!Fanciulli,!Appl.!Phys.!
Lett.!91,!172905!(2007).!
[16]! E.! Prati,! R.! Latempa,! M.! Fanciulli,! “Photon! assited!
tunneling!in!quantum!dots”,!in:!“Electron!spin!resonance!in!
low! dimensional! structures! and! related! phenomena”,! ! in!
press!Editor!M.!Fanciulli,!Springer!(2008).!
[17]! E.! Prati,! R.! Latempa,! M.! Fanciulli,! arXiv:0807.5026v1,!
(2008).!
31
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
2."Innovative"technologies"in"
Non!Volatile"Memories""
MDM! research! in! this! field! focuses! on! exploring!
new!NVM!concepts!and!architectures,!as!possible!
alternatives! for! overcoming! the! scaling!
limitations!of!floating!gate!technologies.!Ongoing!
activities! are! carried! out! within! national! and!
international! projects! founded! by! MIUR! (FIRB!
RBIP06YSJJ),! Fondazione! CARIPLO! (MATRIX),!
INFM! NANO"GAMES! and! European! Community!
FP6!(CHEMAPH,!EMMA,!VERSATILE,!REALISE)!and!
FP7! (GOSSAMER).! Research! includes! studies! on!
materials! for! charge! trapping! and! floating! gate!
non"volatile! memory! devices! (FIRB,! GOSSAMER),!
nanoclusters! embedded! in! dielectric! matrix!
(MATRIX,! NANO"GAMES),! materials! and! novel!
deposition! techniques! for! phase! change! alloys!
(CHEMAPH,! FIRB),! binary! oxides! and! devices! for!
resistive! switching! memories! (EMMA),! rectifying!
junctions! for! NVM! integration! into! crossbar!
arrays! (VERSATILE).! Some! of! these! activities! are!
also!carried!out!within!the!research!projects!with!
Numonyx.!
!
Floating"gate"and"Charge"trapping"memory"
devices""
Floating! gate! based! memory! cells! represent! the!
current! leading! technology! for! non"volatile!
memories.!In!order!to!address!the!future!scaling!
of! these! devices,! MDM! is! currently! involved! in!
the! development! of! advanced! high"dielectric!
constant!materials! to! be!integrated! as! inter"poly!
dielectrics,!in!substitution!to!the!standard!oxide"
nitride"oxide!stacks![1"2].!The!investigated!oxides!
are!Al2O3,!and!ternary!compounds!based!on!HfO2!
or! rare! earth! compounds.! This! activity! is! carried!
out! in! the! framework! of! the! industrial! project!
with! ST/Numonyx,! of! the! Italian! project! FIRB!
funded! by! MIUR! and! of! the! European! project!
REALISE.! In! 2008,! a! new! activity! for! the!
development!of!charge!trapping!memory!devices!
has! started! in! the! framework! of! the! integrated!
European!project!GOSSAMER!and!of!the!industrial!
32!
!
!!!REPORT!ADDENDUM!2007!2008!
research! project! Numonyx.! Charge! trapping!
memories,! where! the! information! is! stored! in!
discrete!traps!instead!of!in!a!polysilicon!layer,!are!
currently! considered! as! future! alternative! for!
high"density!applications.!In!order!to!develop!this!
new! technology,! several! material! issues! related!
to! oxide/electrode! interfaces! as! well! as! the!
comprehension!
of!
trapping/de"trapping!
mechanisms! should! be! addressed.! MDM! is!
involved!in!the!development!of:!(i)!high"dielectric!
constant! oxides! to! be! considered! as! charge!
trapping! layer! alternative! to! the! standard! Si3N4,!
and! as! control! oxides! between! the! metal! gate!
and! charge! trapping;! (ii)! metal! gates! with! high!
work! function! such! as! TaN.! Moreover,! MDM! is!
developing! in! collaboration! with! Numonyx! a!
process! for! the! fabrication! of! test! memory!
devices! incorporating! innovative! materials! for! a!
more!efficient!functional!characterization.!
!
Nanocrystals"
An! evolution! of! the! floating! gate! concept! is!
represented! by! a! memory! device! where! the!
polysilicon!floating!gate!is!replaced!by!an!array!of!
semiconducting! or! metallic! nanocrystals!
embedded!in!a!dielectric!matrix.!The!replacement!
of! the! continuous! polysilicon! film! with! discrete!
charge! storage! nodes! should! in! principle! reduce!
the! sensitivity! of! the! conventional! floating! gate!
cell! with! respect! to! local! tunnel! oxide! defects.!
The! possibility! to! use! nanocrystals! as! charge!
storage!elements!in!non!volatile!memory!devices!
has! been! widely! explored! during! the! last! ten!
years,! but! the! fundamental! trade"off! between!
programming! voltages! and! data! retention!
characteristics! has! not! been! overcome! yet.! In!
principle! the! goal! of! a! low! voltage! NVM! can! be!
achieved! by! using! high"#! materials! for! tunnel!
and/or! gate! oxide! because! the! high! dielectric!
constant!of!these!materials!allows!using!a!thicker!
tunnel! oxide! reducing! leakage! currents.!
Moreover! the! various! investigated! technologies!
for!the!nanocrystal!synthesis!face!the!fabrication!
issue! of! producing! high! density! arrays! of!
uniformly! distributed! nanocrystals!with! a! limited!
dispersion! in! size.! The! capability! to! control! the!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
density! and! the! size! distribution! of! these!
nanoparticles!could!represent!a!breakthrough!for!
this! emerging! technology.! The! development! and!
implementation! of! Si! nanocrystals! based! devices!
have!been!pursued!in!MDM!addressing!these!two!
specific!issues.!On!one!hand,!in!order!to!face!the!
fundamental! trade"off! between! data! retention!
and! programming! speed,! we! explored! the!
properties!of!Si!and!Au!nanocrystals!embedded!in!
materials! with! dielectric! constant! higher! than!
silicon! oxide,! as! for! example! HfO2.! On! the! other!
hand,! we! developed! block"copolymer! based!
lithographic! approaches! for! the! synthesis! of!
silicon!and!metallic!nanoparticles!with!controlled!
in"plane! dispersion.! This! research! activity! is! the!
subject!of!the!national!project!MATRIX!funded!by!
Fondazione! CARIPLO! and! of! the! national! project!
NANO"GAMES!
!
Phase"change"Memories"
The! MDM! research! action! on! phase! change!
memories!(PCM)! developed! in! the! framework!of!
the! European! CHEMAPH! Project! (IST! FP6"
027561),! the! Italian! FIRB! Project,! the! industrial!
project! ST/Numonyx! and! the! bilateral! French"
Italian! Galileo! collaboration! between! CNR! and!
the!University!of!Bordeaux!(France).!The!general!
purpose! was! the! synthesis! and! study! of! thin!
layers!deposited!by!MOCVD!and!comparison!with!
sputter"deposited! equivalent! layers,! the! main!
chalcogenide! material! being! Ge2Sb2Te5.! This! aim!
implies!extended!studies!of!the!thermo"chemical!
properties! of! the! metalorganic! precursors,! along!
with! the! search! of! the! optimal! deposition!
conditions,!to!obtain!the!desired!properties,!such!
as:! resistivity,! thermal! conductivity,! phase"
change! temperature,! roughness,! composition.! In!
particular,!MDM!is!in!charge!of!both!the!MOCVD!
deposition! and! the! morphological! (SEM"FEG),!
structural! (XRD,! XRR),! compositional! (TXRF,!
Raman),! electrical! and! thermal! analysis! of! the!
chalcogenide! layers! within! the! above! projects.!
Researches! performed! by! using! the! deposition!
system! in! Vilnius! (Lituania)! demonstrated! the!
growth! of! chalcogenide! materials,! thanks! to! the!
remote! activation! Hot"Wire! Chemical! Vapor!
!
!
!!!REPORT!ADDENDUM!2007!2008!
Deposition!(HW"CVD)!method.!The!phase"change!
was!demonstrated!in!prototype!PCM!cells!and!by!
ns! laser! pulses! [3,! 4].! Results! from! the! HW"CVD!
technique! were! also! compared! with! those!
obtained! from! liquid! injection! CVD! and! thermal!
CVD! [5].! Depositions! were! on! the! other! hand!
performed! at! MDM,! yielding! a! nucleation! study!
of! GST! grown! by! bubbler"type! thermal! MOCVD!
allowing! the! correlation! of! growth! parameters!
with!the!morphological,!structural,!compositional!
and! electrical! properties! of! the! layers.!
Continuous! layers! of! GeSbTe! in! the! hcp! phase!
and!composition!close!to!the!2:2:5!were!obtained!
and! analyzed;! the! deposition! on! different!
substrates!was!also!investigated![6].!!
!
Binary"oxides"for"resistive"switching"non"
volatile"memories"
Resistive! switching! random! access! non"volatile!
memories! (ReRAM),! based! on! two! terminal!
electrodes! that! sandwich! a! resistive! change!
material,!are!receiving!an!increasing!attention!for!
future! high"density! mass! storage! applications.!
The! currently! investigated! candidate! materials!
for! ReRAM! are! various! transition! metal! binary!
oxides! such! as! NiO,! TiO2,! Cu2O,! ZrOx,! Nb2O5,!
organics! materials! (Cu"TCNQ),! magnetoresistive!
thin! films,! perovskites,! and! amorphous! silicon.!
The!MDM!activity!in!this!field!is!carried!out!in!the!
framework! the! European! project! EMMA,! where!
MDM! is! also! coordinator!of!the!workpackage!on!
material! development,! and! it! is! mainly! devoted!
to! the! investigation! of! switching! properties! of!
binary!oxides.!The!main!results!obtained!in!2007!
and! 2008! are! related! to! the! deposition! and!
physical/electrical! characterization! of! NiO! and!
Nb2O5! grown! by! atomic! layer! deposition! and!
electron! beam! evaporation! [7"11].! The!
investigated!oxides! have! been! also! integrated! as!
resistive! switching! material! in! metal"insulator"
metal!memory!cells,!in!combination!with!various!
electrodes! such! as! Pt,! Au,! n+"Si,! TiN! and! W.! The!
influence!of!the!structural/chemical!properties!of!
the! oxides! and! of! the! oxide/electrode! interface!
on! the! switching! properties! have! been!
33
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
investigated! into! details.! ! Both! NiO"! and! Nb2O5!
based! memory! systems! have! shown! promising!
results! in! term! of! electrical! performance.!
Currently,! the! scaling! potential! of! NiO"based!
memory! cells! and! their! integration! in! cross"bar!
architecture!
(EMMA!
and!
VERSATILE!
collaboration)!are!under!investigation.!
!
Rectifying"junctions"for"NVM"integration"
into"crossbar"arrays"
Despite!the!restless!activity!on!the!study!of!novel!
switching!elements!and!materials!for!non"volatile!
memories,! the! study! of! suitable! integration!
strategies!and!considerations!on!the!scalability!of!
memories! based! on! novel! materials! are! quite!
limited.!MDM!is!active!in!this!field,!mainly!in!the!
framework!of!the!EU!project!VERSATILE,!focused!
on! the! investigation! of! suitable! selectors! for!
crossbar! integration.! This! integration! scheme,!
based!on!the!vertical!stacking!of!a!selector!and!a!
memory! element,! allows! in! principle! higher!
packing! density! and! simpler! 3D! stacking,!
provided! that! two"terminal! rectifying! junctions!
with! suitable! properties! are! developed.! This!
integration!scheme!can!be!applied!for!example!to!
resistive! switching! materials! exhibiting! unipolar!
switching! properties,! including! phase"change!
alloys.! The! most! relevant! achievements! in! this!
field! concern! the! development! of! ZnO"based!
rectifying! junctions! providing! high! forward!
current! and! good! rectifying! ratio! [12"13].!
Moreover,! an! integration! scheme! for! the!
fabrication! of! hybrid! organic/inorganic! junctions!
was! developed,! and! its! compatibility! with! CMOS!
process!was!demonstrated![14]!
!
!
!
!
!
!
!
!
!
!
34!
!
!!!REPORT!ADDENDUM!2007!2008!
[1] D.! Tsoutsou,! G.! Scarel,! A.! Debernardi,! S.C.! Capelli,! S.N.!
Volkos,! L.! Lamagna,! S.! Schamm,! P.E.! Coulon,! M.! Fanciulli,!
Microelectronic!Engineering,!in!press,!(2008).!
[2] A.!Del!Vitto,!R.!Piagge,!M.!Caniatti,!C.!Wiemer,!G.!Pavia,!
F.!Sammiceli,!E.!Ravizza,!S.!Grasso,!S.!Spadoni,!A.!Sebastiani,!
C.! Scozzari,! G.! Ghidini,! C.! Pomarède,! J.! W.! Maes,! M.!
Alessandri,! ECS! Transactions,! 11,! 497! (2007).!
doi:10.1149/1.2779585!
[3] A.! Abrutis,! V.! Plausinaitiene,! M.! Skapas,! C.! Wiemer,! O.!
Salicio,!A.!Pirovano,!E.!Varesi,!!S.!Rushworth,!W.!Gawelda,!J.!
Siegel,!Chem.!Mater.!2008,"20,!3557–3559!
!
[4] A.! Abrutis,! V.! Plausinaitiene, M.! Skapas,! C.! Wiemer,! W.!
!
Gawelda,!J.!Siegel, S.!Rushworth,!J.!Cryst.!Growth,!in!press!,!
2008!
[5] A.! Abrutis,! V.! Plausinaitiene,! M.! Skapas,! C.! Wiemer,! O.!
Salicio,! M.! Longo,! A.! Pirovano,! J.! Siegel,! W.! Gawelda,! S.!
Rushworth,!C.!Giesen,!In!press,!Microelectronic!Engineering!
(2008),!doi:!10.1016/j.mee.2008.09.014.!
[6] M.!Longo,!O.!Salicio,!C.!Wiemer,!R.!Fallica,!A.!Molle,!M.!
Fanciulli,!C.!Giesen,!B.!Seitzinger,!P.K.!Baumann,!M.!Heuken,!
S.! Rushworth,! In! press,! J.! Crystal! Growth! (2008),!
doi:10.1016/j.jcrysgro.2008.07.054.!
[7] S.!Spiga,!A.!Lamperti,!C.!Wiemer,!M.!Perego,!E.!Cianci,!G.!
Tallarida,! H.! L.! Lu,! M.! Alia,! F.! G.! Volpe,! M.! Fanciulli,!
Microelectronic!
Engineering,!
in!
press,(2008),!
doi:110.1016/j.mee.2008.09.18!
[8] A.! Lamperti,! S.! Spiga,! H.L.! Lu,! C.! Wiemer,! M.! Perego,! E.!
Cianci,! M.! Alia,! M.! Fanciulli,! Microelectronic! Engineering,! in!
press,!(2008).!doi:10.1016/j.mee.2008.09.039!
[9] H.L.! Lu,! G.! Scarel,! C.! Wiemer,! M.! Perego,! S.! Spiga,! M.!
Fanciulli,! G.! Pavia,! Journal! of! The! Electrochemical! Society,!
155,!H807–H811!(2008).!!
[10] H.L.!Lu,!G.!Scarel,!M.!Alia,!M.!Fanciulli,!S.J.!Ding,!D.W.!
Zhang,!Applied!Physics!Letters,!92,!222907!(2008).!
[11] U.!Russo,!D.!Ielmini,!C.!Cagli,!A.!L.! Lacaita,!S.!Spiga,!C.!
Wiemer,!M.!Perego,!M.!Fanciulli,!IEDM!Tech.!Dig.!,!775"778!
(2007).!
[12] N.! Huby,! S.! Ferrari,! E.! Guziewicz,! M.! Godlewski,! V.!
Osinniy,!!Appl.!Phys.!Lett.!92,!023502"02354!(2008)!
[13] N.! Huby,! G.Tallarida,! B.Kutrzeba"Kotowska,! S.Ferrari,!
E.Guziewicz,! %.! Wachnicki,! M.! Godlewski,! Microelectronic!
Engineering!2008!!
[14]
E.Katsia,!
G.Tallarida,!
B.Kutrzeba"Kotowska,!
S.Ferrari,! E.Bundgaard,! R.Sondergaard,! F.Krebs,! Organic!
Electronics!!2008!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
3."Spintronics"
In!the!last!two!years,!the!research!activities!at!the!
MDM! Laboratory! in! the! field! of! spin"electronics!
(spintronics)!have!been!focused!to!the!study!and!
the! synthesis! of! thin! magnetic! films,! oxides,! and!
structures! for! spintronics! applications.! Our!
efforts! have! been! directed! toward! the! synthesis!
by!atomic!layer"!and!chemical!vapour"!deposition!
(ALD/CVD)! of! highly! spin"polarized! materials! to!
be! used! as! electrodes! in! magnetic! tunnel!
junctions! (MTJs).! We! have! explored! the!
possibility! of! developing! novel! materials! for!
generating! spin"polarized! currents,! such! as!
diluted! magnetic! semiconductors! (DMS)! that!
could!serve!as!multifunctional!materials.!Further,!
a! (more)! long"term! focused! research! activity!
concerned!the!attempt!of!using!the!electron!and!
nuclear! spins! for! quantum! information!
processing! and! quantum! computation! for! an!
ultimately!scalable!technology.!!
!
Atomic"layer"deposition"of"thin"films"for"
magnetic"tunnel"junctions""
Starting! from! February! 2005,! our! research!
activity!concerning!the!ALD!of!magnetic!thin!films!
and! oxides! was! mainly! framed! in! the! national!
research! project! SOLARIS.! The! project! was!
financed! by! the! CARIPLO! Foundation! and! ended!
in! February! 2008.! The! main! purpose! of! the!
project! was! to! develop! ALD! processes! for! the!
synthesis!of!MTJs.!We!have!successfully!improved!
a! simple,! efficient,! and! cost! effective! reactor! for!
depositing! ferromagnetic! (FM)! thin! films! such! as!
Co! and! Fe3O4! by! making! use! of! solid! metal!
carbonyls!precursors![1].!The!use!of!magnetite!as!
electrode!in!MTJs!is!particularly!intriguing!due!to!
the! predicted! half! metallic! behavior! that! could!
serve! for! producing! a! 100%! spin! polarized!
electrons! source! with! a! very! high! Curie!
temperature! (860! K).! Magnetoresistance! (MR)!
measurements! have! been! carried! out! on! the!
Fe3O4!films,!and!the!achievement!of!MR!values!of!
few! percents! at! moderate! fields! is! promising! for!
an!inclusion!of!Fe3O4!into!spintronics!devices![2].!
!
!
!!!REPORT!ADDENDUM!2007!2008!
Thin! oxide! films! (Al2O3,! HfO2,! Lu2O3,! ZrO2,! and!
MgO)!have!been!deposited!by!ALD!and!they!can!
be! successfully! employed! as! tunnel! barriers! in!
MTJs.! We! have! synthesized! Fe3O4/MgO/Co!
multilayers! displaying! an! independent! switching!
of! the! FM! electrodes! in! a! magnetic! field.! Our!
results! show! that! the! Fe3O4/MgO/Co! system! is!
promising! for! MTJs! applications,! and! this! opens!
the! way! for! developing! a! full! in! situ! ALD/CVD!
process!for!the!synthesis!of!MTJs.!A!process"flow!
for! producing! MTJs! demonstrators! in! the! cross"
bar! geometry! has! been! developed,! which! is!
entirely! based! on! optical! lithography! and! wet!
etching!of!oxides!and!metals.!
!
Characterization"of"ferromagnetic"
film/oxide"interfaces""
We!have!continued!our!research!activity!focused!
on!the!use!of!57Fe!conversion!electron!Mössbauer!
spectroscopy! (CEMS)! for! performing! structural,!
chemical,! and! magnetic! characterizations! of!
different! FM! film/oxide! interfaces! at! the! atomic!
scale.!The!submonolayer!sensitivity!and!element"
specificity! of! CEMS,! combined! with! the! use! of!
appropriately!located! 57Fe"enriched!tracer!layers,!
is! an! ideal! tool! for! studying! the! interfacial!
properties! of! those! systems.! Different! oxides!
(Al2O3,! ZrO2,! HfO2,! Lu2O3,! and! MgO)! have! been!
produced!by!ALD!at!the!MDM!Laboratory,!on!top!
of! which! 57Fe! (2! nm)/54Fe! (20! nm)! layers! have!
been! deposited! by! pulsed! laser! deposition! (PLD)!
at! the! Moscow! Engineering! Physics! Institute!
(MEPHI),! Russia.! All! the! interfaces! have! been!
compared!in!terms!of!the!relative!fraction!of!the!
57
Fe!atoms!reacting!with!the!oxides,!and!we!have!
found! that! the! Fe! atoms! react! less! at! the!
interface! with! HfO2,! Al2O3,! and! MgO,! which! are!
characterized!by!a!surface!roughness!below!1!nm!
[3].! The! paramagnetic! contributions! at! the!
interfaces! are! limited! to! <5%,! and! this! is!
promising! in! the! view! of! an! inclusion! of! the!
proposed!systems!in!MTJs.!The!influence!of!rapid!
thermal! annealing! (RTA)! up! to! 500°C! has! been!
studied.!RTA!up!to!300!°C!is!beneficial!in!reducing!
the!mixing! at!the!interface![3],!while! RTA!at!500!
35
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
°C! is! beneficial! or! detrimental! depending! on! the!
oxide.! We! observe! a! drastic! reduction! of! the!
mixing! at! the! Fe/Lu2O3! interface! that! we! mainly!
attributed! to! dehydrogenation! processes! [4].! In!
collaboration! with! the! MEPHI! institute,! we! have!
developed! a! process! for! synthesizing! Fe3Si/SiO2!
stacks! with! an! all! in! situ! PLD.! The! absence! of!
paramagnetic! phases! at! the! interface! together!
with! the! surface! roughness! below! 1! nm! and! the!
overall! good! quality! of! the! films! is! promising! for!
an! inclusion! of! the! Fe3Si/SiO2! system! into!
functional!spintronics!devices![5].!!
!
Mössbauer"spectroscopy"investigation"of"
diluted"magnetic"semiconductors"
Our! experimental! activity! concerning! the!
Mössbuaer!study!of!DMS!has!been!mainly!related!
to!the! experiments!we! are! performing!within! an!
international! collaboration! at! the! large! scale!
facility! of! ISOLDE"CERN.! We! make! use! of! an! on"
line! Mössbauer! spectroscopy! technique! in! order!
to!investigate!the!fundamental!role!of!defects!in!
determining! the! magnetic! properties! of! oxides!
and! semiconductors,! focusing! on! the! study! of!
Mn/Fe! implanted! ZnO! single! crystals.! The!
extremely! low! total! implanted! dose! able! to!
synthesize!
“truly”!
diluted!
magnetic!
semiconductors.! Simultaneously,! a! large! number!
of! defects! are! created! during! the! implantation!
process! of! radioactive! 57Mn+! ions! into! the! ZnO!
matrix.! The! Mn! ions! decay! to! the! 14.4! keV!
Mössbauer! level,! thus! enabling! to! study! the!
interaction!between!the!implanted!Mn/Fe!probes!
and!the!implantation"induced!defects!at!the!most!
atomistic! level.!We!have! detected! the!formation!
of!FeZn–O–VZn!magnetic!complexes!that!are!stable!
up! to! 700! K! [6].! Time! delayed! measurements!
(TDM)! in! Mn/Fe"implanted! ZnO! crystals! have!
been!performed!in!order!to!observe!the!dynamic!
changes! in! the! Mn/Fe! local! environment!
following! the! implantation! process,! further!
elucidating! the! formation! process! of! magnetic!
complexes! in! ZnO! [7].! Recently,! our! efforts! have!
been! directed! toward! the! realization! of!
experiments! in! which! the! Mössbuaer! spectra!
36!
!
!!!REPORT!ADDENDUM!2007!2008!
were! recorded! at! different! angles! between! the!
samples! and! the! out"coming! )"rays,! and! in! an!
applied! magnetic! field.! The! results! are! currently!
under!study!and!they!will!give!more!insights!into!
the!origin!of!the!magnetism!in!ZnO.!!
!
Study"of"the"static"magnetic"field"and"
microwave"irradiation"response"of"the"
random"telegraph"signal"in"MOSFETs"for"
qubit"implementation"
We! discovered! that! at! cryogenic! temperatures!
the!Random!Telegraph!Signal!(RTS)!of!a!trap!in!an!
n"MOSFET! can! exhibit! drain! current! giant!
fluctuations! of! more! than! 50%.! Such! behavior! is!
observed!at!the!threshold.!A!low!drain!voltage!is!
required!to!avoid!thermal!heating!of!the!electron!
gas,! so! the! conduction! along! a! one! dimensional!
path!is!preserved.!At!low!temperature!such!giant!
fluctuations! in! submicron! MOSFETs! are! well!
explained! in! analogy! to! the! discrete! doping!
models! usually! adopted! to! describe! charge!
fluctuations! in! decanano! MOSFETs! at! room!
temperature! [8].! In! such! a! regime,! we! ordinarily!
drive!RTS!by!means!of!microwave!irradiation.!We!
developed!a!model!which!describe!how!does!the!
RTS! changes! as! a! function! of! the! power! of! the!
microwave! irradiation! [9],! and! we! used! it! to!
control! the! charge! state! of! a! zero! dimensional!
defect! capable! to! host! 1! or! 2! electrons! [10].!
Indeed! microwave! irradiation! causes! voltage!
fluctuations! in! solid! state! nanodevices.! Such! an!
effect! is! relevant! in! atomic! electronics! and!
nanostructures! for! quantum! information!
processing,! where! charge! or! spin! states! are!
controlled! by! microwave! fields! and! electrically!
detected.! We! calculated! and! measured! the!
variation! of! the! characteristic! times! of! the!
capture! and! emission! of! a! single! electron! by! an!
interface! defect! in! submicron! metal! oxide!
semiconductor!field!effect!transistor!as!a!function!
of! the! microwave! power.! The! variation! of! the!
characteristic! times! under! microwave! irradiation!
is! quantitatively! predicted! from! the! microwave!
frequency! dependent! stationary! current!
generated!by!the!voltage!fluctuation!itself.!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
!
Shallow"donor"electron"spin"in"Si:"detection,"
manipulation"and"coherence"
Shallow!donors!in!silicon,!already!discussed!in!the!
previous!section!on!CMOS!scaling!in!the!frame!of!!
single!atom!electronics,!are!promising!candidates!
to! realize! new! classical! and! quantum!
functionalities.!Single!atom!spintronics!and!!solid!
state! qubit! [11]! are! among! the! most! intriguing!
exploitation!possibilities!for!the!ultimate!Si"based!
nanostructures! in! which! a! single! donor! is!
included.! We! are! addressing! the! challenging!
issues!of!the!electrical!detection!of!electron!spin!
resonance!of!a!small!number!of!donors!in!silicon!
wires!produced!by!e"beam!lithography,!!!explore!
different! schemes! for! spin! manipulation,! and!
determine! in! bulk! Si! and! SiGe! as! well! as! in! Si!
nanostructures! the! coherence! time,! a! critical!
parameter!for!quantum!information!processing.!
Electrically! detected! magnetic! resonance! of! P!
donors! in! silicon! nanowires! has! been! recently!
detected!and!work!is!in!progress!to!address!other!
dopants.!!!
!
!
!
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!
!
!
!
!
!
!
!
!
!
!
!
!
!
!!!REPORT!ADDENDUM!2007!2008!
[1]!R.!Mantovan,!M.!Georgieva,!M.!Perego,!H.L.!Lu,!S.!Cocco,!
A.!Zenkevich,!G.!Scarel,!M.!Fanciulli,!Acta!Physica!Polonica!A!
112,!10!(2007).!
[2]! R.! Mantovan,! A.! Lamperti,! M.! Georgieva,! and! M.!
Fanciulli,!unpublished.!
[3]!R.!Mantovan,!C.!Wiemer,!A.!Lamperti,!M.!Georgieva,!M.!
Fanciulli,!A.!Goikhman,!N.!Barantcev,!Yu.!Lebedinskiy,!and!A.!
Zenkevich,!submitted!to!Hyperfine!Interactions.!
[4]! R.! Mantovan,! C.! Wiemer,! A.! Lamperti,! A.! Zenkevich,! Yu.!
Lebedinski,! and! M.! Fanciulli,! submitted! to! “Journal! of!
Magnetism!and!Magnetic!Materials”.!
[5]!R.!Mantovan,!M.!Georgieva,!M.!Fanciulli,!A.!Goikhman,!N.!
Barantcev,!Yu.!Lebedinskii,!A.!Zenkevich,!physica!status!solidi!
(a)!205,!1753!(2008).!
[6]!G.!Weyer,!H.!P.!Gunnlaugsson,!R.!Mantovan,!M.!Fanciulli,!
D.! Naidoo,! K.! Bharuth"Ram,! T.! Agne,! Journal! of! Applied!
Physics!102,!7!(2007)!
[7]!H.!P.!Gunnlaugsson,! G.!Weyer,!R.!Mantovan,!D.! Naidoo,!
R.! Sielemann,! K.! Bharuth"Ram,! M.! Fanciulli,! K.! Johnston,! S.!
Olafsson,! G.! Langouche,! Hyperfine! Interactions,! in! press!
(2008),!doi:!10.1007/s10751"008"9893"4.!
[8]! E.! Prati,! M.! Fanciulli,! G.! Ferrari,! M.! Sampietro,! J.! Appl.!
Physics,!103,!123707!(2008)!!!
[9]! E.! Prati,! M.! Fanciulli,! A.! Calderoni,! G.! Ferrari,! M.!
Sampietro,!J.!Appl.!Physics,!103,!104503!(2008)!
[10]! E.! Prati,! M.! Fanciulli,! Physics! Letters! A! 372,! 3102"3104!
(2008)!
[11]!B.E.!Kane,!Nature!393,!133!(1998)!
37
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
4."Metamaterials"towards"the"
integration"of"material"
science,"electronics"and"
optics"
The! non! trivial! electromagnetic! response! of!
metamaterials! as! an! emergent! property!
controlled!by!their!geometry!it!is!now!addressed!
towards! multidisciplinary! fields! in! order! to! fully!
exploit!their!potential.!One!promising!trend!is!the!
application!of!semiconductor!technology!used!for!
electronics! to! realize! high! frequency!
metamaterials.! We! developed! planar! pseudo"
elliptical! filters! submillimetrically! pixelized! in! Ka!
waveguide.! The! filters! consist! of! a! Frequency!
Selective! Surface! (FSS)! placed! perpendicularly! to!
the! axis! of! the! waveguide! and! were! realized! by!
means! of! a! high! resolution! photolithographic!
technique.! ! At! microwave! frequency! above! K!
band! (20! GHz)! the! finite! thickness! of! the! metal!
constituting! the! FSS! causes! a! shift! of! the!
predicted! transfer! function! towards! high!
frequencies.! The! reduction! of! the! thickness!
increases! the! attenuation,! while! it! reduces! the!
frequency! shift.! We! investigated! the! role! of!
parasitic!capacitance!to!cause!such!shift.!
We! also! developed! a! uniaxial! metamaterial!
capable! to! realize! negative! refraction! below! the!
cutoff! frequency! in! a! C"band! waveguide! and! we!
studied!the!effect!of!the!density!of!the!cells!and!
the!transition!from!the!metamaterial!to!ordinary!
behaviour.!!
!
!
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!
!
!
38!
!
!!!REPORT!ADDENDUM!2007!2008!
[1]! C.! Amabile,! E.! Prati,! F.! Costa,! A.! Monorchio,! IEEE!
International! Congress! on! Advanced! Electromagnetic!
Materials!in!Microwaves!and!Optics,!pp!882"885,!Rome,!Italy!
(2007)!
[2]!C.!Amabile,!E.!Prati,!Proceedings!NATO!Conference!Meta!
2008,!Marrakech,!Morocco!(2008)!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
5."Tailoring"innovative"
devices"by"parameter!free"
simulations"
Dielectrics! as! replacement! for! tunnel! and!
interpoly!oxides!in!conventional!ultra"scaled!non"
volatile!memory!devices!must!fulfill!at!least!three!
basal! requirements:! i)! present! an! high! dielectric!
constant! ii)! have! defect"free! interface! with! the!
semiconducting!substrate!(typically!Si!or!an!high"
mobility! substrate! as! Ge! or! GaAs)! to! avoid! the!
formation! of! states! in! the! gap! that! can! produce!
leakage!iii)!have!an!appropriate!band!offset!with!
the! substrate! to! prevent! tunnel! of! electrons!
trough! the! oxide.! In! particular,! hexagonal! La2O3!
has! recently! attracted! considerable! interest! for!
the! high! value! of! the! dielectric! constant! of! this!
phase,! #=27! [1],! when! compared! to! the!
experimental! value! of! the! dielectric! constant! of!
other! high"#! oxides.! By! means! of! plane! wave!
pseudopotential! method! we! have! studied! the!
electronic! properties! of! high"#! hexagonal! La2O3!
(0001)"oriented,! epitaxially! grown! on! Si! (111)!
substrate.! At! variance! with! the! conventional!
(001)!orientation,!the!Si!(111)!oriented!substrate!
has!in"plane!lattice!parameter!similar!to!the!one!
of!the!hexagonal!La2O3,!allowing!epitaxial!growth!
and! a! defect! free! interface.! We! found! that! the!
dielectric! constant! along! the! growth! direction!
and! the! band! gap! are! larger! in! the! epitaxial! film!
than! in! the! bulk! oxide.! By! super"cell! techniques!
we! have! computed! the! band! alignment! of! the!
junction.! In! particular,! the! conduction! band!
offset,! found! to! be! considerably! larger! than! one!
electron! volt! makes! this! oxide! extremely!
promising! for! the! future! complementary"metal"
oxide"semiconductor!devices!(CMOS).!
In! order! to! obtain! a! CMOS! at! nanometric! scale,!
considerable! attention! was! focused! on! the!
epitaxial! growth! of! high"#! oxides! on!
semiconductors! substrates;! in! particular,! ZrO2!
and! HfO2! are! among! the! most! studied! oxides.!
Due!to!the!large!mismatch!between!the!oxide!and!
!
!
!!!REPORT!ADDENDUM!2007!2008!
the! semiconductor,! the! unexpected! preferential!
orientation! of! monoclinic! ZrO2! and! HfO2! ! on! Ge!
and! GaAs! (001)! high"mobility! substrates! has!!
puzzled! up! to! now! material! scientists! interested!
in! a! defect"free! interface! for! ! nano"electronic!
applications.! By! state"of"the"art! first! principle!
calculations! we! identify! the! microscopic!
mechanism! responsible! for! the! oriented! growth!
of! HfO2! on! Ge! and! GaAs! (001)! surfaces.! The!
preferential! orientation! of! the! monoclinic!
structure! is! related! to! the! relaxation! of! the!
epitaxially! stabilized! anatase! phase! when! a!
critical! thickness! is! reached! [2].! In! fact,! the!
preferential! orientation! of! the! ! monoclinic!
structure!follows!the!in"plane!axis!of!the!anatase!
phase,! as! ! proved! by! accurate! X"ray! scattering!
measurements.[2]! According! to! first! principles!
simulations,! the! anatase! phase! ! is! almost! lattice!
matched! with! ! the! substrate! allowing! to! control!
at! the! atomic! level! its! interface! with! the!!
semiconductor.! The! fact! that! epitaxial! HfO2!
anatase! has! no! bulk! counterpart! is! explained! by!
our! calculations! as! due! to! the! unfavorable!
Helmholtz!free!energy!of!anatase!phase!when!the!
condition!of!epitaxy!is!released.!In!the!case!of!Ge!
(001)!substrate,!we!found!the!critical!thickness!of!
the! epitaxial! layer! of! about! 10! nm.! Further,! the!!
high"dielectric!constant!!and!the!band!offset!with!
the! substrate! computed! for! the! anatase! phase! "!
that!are!comparable!with!the!values!obtained!for!
bulk! monoclinic! phase! taken! from! literature"!
make!anatase!HfO2!a!promising!candidate!for!the!
integration! of! high"#! dielectrics! into! the! next!
generation!of!!ultra"scaled!devices![3]!
!
!
!
!
[1]!G.Scarel!et!al.!Appl.!Phys.!Lett.!91,!102901!(2007).!
[2]!A.!Debernardi,!C.!Wiemer,!M.!Fanciulli,!!!Phys.!Rev.!B.!76,!
p.155405!(2007).!
[3]! A.Debernardi,! C.! Wiemer,! M.! Fanciulli,! Sci.! Semicon.!
Process.!!(2008),!in!press.!
39
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
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!!!REPORT!ADDENDUM!2007!2008!
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40!
Contributions!by:!
Marco!Fanciulli!
Alberto!Debernardi!
Massimo!Longo!
Roberto!Mantovan!
Alessandro!Molle!
Michele!Perego!
Enrico!Prati!
Sabina!Spiga!
Claudia!Wiemer!
Grazia!Tallarida!
!
Edited!by:!
Alessio!Lamperti!
Anna!M.!Ferretti!
CNR!INFM!LABORATORIO!NAZIONALE!MDM!
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!!!REPORT!ADDENDUM!2007!2008!
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