GTK Microchannel Cooling Hydraulic simulation with Rectangular Manifold Enrico Da Riva, Vinod Rao CERN (EN/CV/DC) 22th Nov 2011 22 Nov. 2011 E. Da Riva, V. Rao 1 Mass Flow: 9.8 g/s Density: 1818.3 kg/(m3) @ -30°C Kinematic viscosity(nu): 0.9cSt @ -30°C Turbulence Intensity: 3 % Heat capacity of fluid: 967 J/(kg K) Thermal conductivity : 0.0633 W/(m-K) Silicon properties: Heat capacity:675 J/(kg K) Density: 2330 kg/(m3) Thermal conductivity: 195 W/(m-K) 22 Nov. 2011 E. Da Riva, V. Rao 2 22 Nov. 2011 E. Da Riva, V. Rao 3 Flow distribution: Wall thickness 100µm channel:100X100 Old Manifold PD:5.1bars 22 Nov. 2011 channel:100X100 Manifold [1.7mm] PD: 4.3bars E. Da Riva, V. Rao channel:100X100 Manifold [2mm] PD : 3.9 bars 4 Flow distribution: Wall thickness 200µm channel:200X70 Manifold widh:1.7mm channel:200X70 Manifold width:2mm PD: 6.7bars 22 Nov. 2011 PD : 6.4 bars E. Da Riva, V. Rao 5 Influence of sW on x/x0 and Δp (100 X 100) Double inlet/outlet, 10 g/s, 48 W, -30 °C L Fluid IN st Fluid OUT MICROCHANNELS w sw a b st w = 60 mm, L = 40 mm, q = 2 W cm-2 a [μm] b [μm] 100 22 Nov. 2011 100 x0 silicon = 0.094 m, x0 C6F14 = 0.190 m st sw channels [μm] [μm] 25 x/x0 [%] Pressure Drop [bar] 25 480 0.12 4.0 50 400 0.12 4.4 100 300 0.13 5.3 200 200 0.14 7.0 E. Da Riva, V. Rao 6 Influence of sW on x/x0 and Δp (70 X 200) Double inlet/outlet, 10 g/s, 48 W, -30 °C L Fluid IN st Fluid OUT MICROCHANNELS w sw a b st w = 60 mm, L = 40 mm, q = 2 W cm-2 a [μm] b [μm] 70 22 Nov. 2011 200 x0 silicon = 0.094 m, x0 C6F14 = 0.190 m st sw channels [μm] [μm] 25 x/x0 [%] Pressure Drop [bar] 25 267 0.09 4.9 50 240 0.10 5.2 100 200 0.10 5.9 200 150 0.11 7.2 E. Da Riva, V. Rao 7 Influence of st on x/x0 Double inlet/outlet, 10 g/s, 48 W, -30 °C L Fluid IN st Fluid OUT MICROCHANNELS w sw a b st w = 60 mm, L = 40 mm, q = 2 W cm-2 a [μm] b [μm] st sw channels [μm] [μm] 25 70 200 40 25 40 22 Nov. 2011 x0 silicon = 0.094 m, x0 C6F14 = 0.190 m 25 267 200 150 E. Da Riva, V. Rao x/x0 [%] 0.09 0.13 0.11 0.14 Pressure Drop [bar] 4.9 7.2 8