o
Pixel : LS1, Run2 and Fase 2
Slides per Clara
17 September 2014
G. Darbo– INFN / Genova
Indico agenda:
• https://agenda.infn.it/conferenceDisplay.py?confId=8420
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
2014 Activities – 2015 Plan
2014: CSN1 funded (Feb and May) R&D Phase 2 activities for ATLAS & CMS
inner trackers.
• Development of 3D and Active Edge sensors with FBK – 3 Batches (ATLAS/CMS)
• Bump-bonding: development of Indium bumps (6” sensors) and produce modules
• Develop a technology for pixel detector hybridization using C (dielectric) instead of R
(bump-bonding) coupling
• Completion of CO2 test plant (combined ATLAS / LHCb)
2015: Activities and line of funding
• Continue with 3D Sensor plan: produce modules, test in lab and TB, irradiate, procure
sensors for next FBK run.
• Bump-bonding: for testing FBK sensors and to develop for future RD53 requirements
• CO2 cooling: contribute to ATLAS stave R&D, thermal simulation and test with CO2
plant
• Multi-module R/O: use leading experience of ROD designer (BO) to develop a 16
module table-top road for architecture study and for test-beam application.
• Upgrade to USBPix3: most diffused single module system based on USB. Upgrade also
for use if HV/HR-CMOS
• HV/HR-CMOS: presented a new project in CSN5 (BO, GE, MI)
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
2
3D Sensor Program - 2014
Planned 3 run at FBK in 2014 – Funded by CSN1 in Feb
• No.1: DRIE process setting up for thin columns. Process in completion. Found that 5-6
µm are the best suitable column diameter.
• No.2: test planar process with SiSi DWB and Epi substrates. Layout completed, mask
submission, wafer expected in 6 weeks.
• No.3: 3D single side process with SiSi DWB and Epi substrates. Layout in discussion.
Compatible layout with other foundries (CNM) to simplify common test of devices.
Activity
2014
1
2
3
4
5
6
2015
7
8
9
10
11
12
1
2
3
4
5
6
Feasibility of <10µm columns
Test SiSi DWB / Epi substrate - planar process
3D full process on SiSi DWB / Epi substrate
3
5+1
11
Total
Note:
• A second 3D run is foreseen at the
end of 2015 / early 2016 – layout matching
RD-53 layout.
G. Darbo – INFN / Genova
No. of
Litho
RD_FASE2 – Slides per Clara
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Schedule presented in Feb’14.
Still up to date.
Need approval from MEMS3
committee of 3rd batch!
Roma, 17 September 2014
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FBK: Status of Batches
Batch 1: study of columns
3.8 um
Batch 2: study SiSi subtrates
Mask submitted
ATLAS
CMS
158 um
In measurement
5.6 um
Batch 3: 3D sensors
Layout study and
Simulation of a
3D pixel cell
Test structures for Si-Si qualification
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
4
CCPD Hybridization
HV/HR-CMOS chip coupled capacitively to R/O
chip (CCPD – Capacitively Coupled Pixel Detector)
instead of “classic” bump-bonding
Process Recipe
Spin SU-8 photoresist
Pattern pillars by mask
• Develop a technique to insert uniform, well defined
thickness of dielectric between R/O and HV/HR-CMOS
chips
• Should be a cost effective, rad-hard process to
transfer to industry
Spacer define the
distance between chips
Test program in progress:
Proper qualified glue
Target to D = 5 µm,
C ~ 4 fF for 18 µm
pad diameter.
• See preliminary results next slide
R/O CHIP
Activities will continue in the HVR_CCPD project in
CSN5 (new experiment)
• Involving BO, GE & MI
• Also scientists outside ATLAS will participate.
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Glue deposition
R/O CHIP
Align & pressure
DETECTOR CHIP
R/O CHIP
Roma, 17 September 2014
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Deposition of Pillars (spacers)
2-inch mask below with different
Densities of spacers – FE-I4/FE-I3
Structures.
FE-I4 with matrix of SU8
spacers:
200 µm x 200 µm
columns 4.7 µm high
FE-I4 with matrix of SU8
spacers:
40 µm x 40 µm columns
4.7 µm high
SU8-2005 deposited on 2-inch wafer
from Siegert
Credits: V. Ceriale
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
6
2014 - CO2 Cooling Plant
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
7
Milestones
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
8
SPARE SLIDES
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
9
3D Sensors – Proposed Process
New generation of 3D sensors
6” wafer new process at FBK
Smaller pixel (event pileup)
reduce column distance (2x1016 neq/cm2)
Thinner pixel (≤1.5ke threshold)
TCAD simulation: Optimal Q, Lower Cdet ,…
Bias voltage applied to back side (as IBL)
Single side 3D process on:
•
•
Si-Si DWB (Direct Wafer Bonding)
Epitaxial wafers
n++ col
Bump-bond
Epi – SiSi DWB
•
•
•
•
•
•
Single side 3D process
p++
Charge Amp.
P+ Epi layer /
P+ High Ω•cm wafer
100÷150µm
P++ Low Ω•cm wafer
Thin-down
col
-Vb
metal
TCAD capacitance simulation
• Layout: 2 n-columns in 25x150 µm2
• Total capacitance for dcol=5µm
• 100 µm thick  71 fF/pix
• 150 µm thick  88 fF/pix
• It was 200 fF/pix for IBL
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
10
DRIE for Ohmic Columns
158 um
3.8 um
5.6 um
7.6 um
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
11
DRIE for Junction Columns
ID#
LEFT
CENTER
RIGHT
G. Darbo – INFN / Genova
5.1
5.5
5.5
5.6
5.8
5.9
5.10
5.11
Nominal
diameter (um)
5
5
5
5
5
5
5
5
Depth
(um)
99
99.5
100
98
98
98
95
95
Surface
diameter (um)
3.5
5.5
5.5
4.3
5.5
3.9
3.3
3.3
RD_FASE2 – Slides per Clara
Diameter at
tip (um)
3.2
2.9
3.5
2.6
2.6
2.9
2.7
2.7
Roma, 17 September 2014
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Planar test batch
ATLAS
CMS
•
p-type SiSi DWB wafers
from ICEMOS
•
100-mm and 130-mm HR active
sensor thickness
•
p-spray & p-stop isolation
•
Layout ready, masks ordered
•
To start now, to be completed
in 6-7 weeks
Test structures for Si-Si qualification
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
13
Wafers Sets – To Bump-Bond
3D Double Side Batch
CMS Single chip (24x)
ATLAS FE-I4 (13x)
(1E, 2E, 3E, 4E)
Planar ATLAS/CMS “Batch 2”
ATLAS
CMS
CMS Quads (6x)
(2E, 3E)
MEDIPIX2 (4x)
NA62 test chip (20x)
Test structures for Si-Si qualification
In program 4 sensor batches that would need BB in 2014/15:
• 3D double side – October - Funds (MI) assigned for 2014
• Planar ATLAS/CMS Batch 2 – November – Funds (FI/PI) assigned 2014
• 3D and Active edge batches coming 2015 – no funds yet. In 2015 request
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G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
14
SU8-2005 Results
Profile scan direction
1.26 µm of bow. Column highs are very uniform: 4.7 µm over 2 cm
Results obtained with a spinning rotation of 2500 rpm and SU8-2005
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
15
Future Plan: M-Module R/O
Le caratteristiche della scheda sono:
•
•
•
•
•
Completa compatibilità firmware e software con il ROD/BOC IBL ROD/BOC in one card
Possibilità di operare senza crate (table-top)
Connessione ottica o elettrica di 16 FE-I4
Possibilità di connessione esterna via Gbit ETH, S-Link (Modalità compatibile con FW/SW IBL)
Possibilità di utilizzo per test GBT/FELIX, con uscita PCIe e protocolli Infiniband, rapid-io, 40-100 GBe
Costi:
• Prototipaggio e fabbricazione di due schede 10 k€
• Realizzazione di 5 schede per i laboratori italiani 15 k€
• Componenti off-shelf per il sistema 10 k€
Attività BO-GE
Prototipi 2015
Produzione 5 schede 2016
G. Darbo – INFN / Genova
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
16
Got Funded
3D
• Funded 3 batches at FBK:
• Mechanical test – approved by MEMS3 committee – order placed (3x2200 €)
• Simple planar to qualify substrates – approved by MEMS3 – order placed (6x2200 €)
• 3D batch, single side, on hold waiting batch 2.
• Substrates
• Ordered 55 wafers from IceMOS (SiSi wafer bonded) – material is on shipment
• Looking for Epi wafers – indirect contact with SHINETSU – offer received (25 wafers –
11.9 kCHF) – doubts on specifications (epi-layer thickness spread: 104÷156 µm!)
Bump-bonding
• Funded 20 k€ for BB at Selex + 7 k€ for FE-I4B
• Bump-bond 3D sensors in production at FBK – old design IBL-like
• Develop In-bumps for high density – incomplete funding (cut the dummy wafers).
HV-CMOS hybridization
• FE-I4B plus consumables to test hybridization
CO2 cooling
• Funded TRACI CO2 cooler
SUMMARY OF RECEIVED FUNDS IN 2014
Date
Sezione
Feb 2014
GE
Apr 2014
GE
May 2014
GE
May 2014
MI
May 2014
MI
G. Darbo – INFN / Genova
Category
3D
3D
HV
BB
CO2/µ-CH
ATLAS/COMMON
COMMON
COMMON
ATLAS
ATLAS
ATLAS
Assigned
€ 20 000
€ 44 000
€ 13 000
€ 27 000
€ 20 000
€ 124 000
Committed Description
€
15 000 Wafer for 3D sensors (common with CMS) €
19 800 3 processes at FBK - 2 committed
HV-CMOS Hybridization - 3 FE-I4B wafers
BB of 3D (IBL design on 6") + BB high density + 3 FE-I4B wafers
TRACI - co-funded with LHCb
RD_FASE2 – Slides per Clara
Roma, 17 September 2014
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