GTK Microchannel Cooling
Hydraulic simulation with Rectangular Manifold
Enrico Da Riva, Vinod Rao
CERN (EN/CV/DC)
22th Nov 2011
22 Nov. 2011
E. Da Riva, V. Rao
1
Mass Flow: 9.8 g/s
Density: 1818.3 kg/(m3)
@ -30°C
Kinematic viscosity(nu): 0.9cSt @ -30°C
Turbulence Intensity: 3 %
Heat capacity of fluid: 967 J/(kg K)
Thermal conductivity : 0.0633 W/(m-K)
Silicon properties:
Heat capacity:675 J/(kg K)
Density: 2330 kg/(m3)
Thermal conductivity: 195 W/(m-K)
22 Nov. 2011
E. Da Riva, V. Rao
2
22 Nov. 2011
E. Da Riva, V. Rao
3
Flow distribution: Wall thickness 100µm
channel:100X100
Old Manifold
PD:5.1bars
22 Nov. 2011
channel:100X100
Manifold [1.7mm]
PD: 4.3bars
E. Da Riva, V. Rao
channel:100X100
Manifold [2mm]
PD : 3.9 bars
4
Flow distribution: Wall thickness 200µm
channel:200X70
Manifold widh:1.7mm
channel:200X70
Manifold width:2mm
PD: 6.7bars
22 Nov. 2011
PD : 6.4 bars
E. Da Riva, V. Rao
5
Influence of sW on x/x0 and Δp (100 X 100)
Double inlet/outlet, 10 g/s, 48 W, -30 °C
L
Fluid IN
st
Fluid OUT
MICROCHANNELS
w
sw
a b
st
w = 60 mm, L = 40 mm, q = 2 W cm-2
a
[μm]
b
[μm]
100
22 Nov. 2011
100
x0 silicon = 0.094 m, x0 C6F14 = 0.190 m
st
sw
channels
[μm] [μm]
25
x/x0
[%]
Pressure Drop
[bar]
25
480
0.12
4.0
50
400
0.12
4.4
100
300
0.13
5.3
200
200
0.14
7.0
E. Da Riva, V. Rao
6
Influence of sW on x/x0 and Δp (70 X 200)
Double inlet/outlet, 10 g/s, 48 W, -30 °C
L
Fluid IN
st
Fluid OUT
MICROCHANNELS
w
sw
a b
st
w = 60 mm, L = 40 mm, q = 2 W cm-2
a
[μm]
b
[μm]
70
22 Nov. 2011
200
x0 silicon = 0.094 m, x0 C6F14 = 0.190 m
st
sw
channels
[μm] [μm]
25
x/x0
[%]
Pressure Drop
[bar]
25
267
0.09
4.9
50
240
0.10
5.2
100
200
0.10
5.9
200
150
0.11
7.2
E. Da Riva, V. Rao
7
Influence of st on x/x0
Double inlet/outlet, 10 g/s, 48 W, -30 °C
L
Fluid IN
st
Fluid OUT
MICROCHANNELS
w
sw
a b
st
w = 60 mm, L = 40 mm, q = 2 W cm-2
a
[μm]
b
[μm]
st
sw
channels
[μm] [μm]
25
70
200
40
25
40
22 Nov. 2011
x0 silicon = 0.094 m, x0 C6F14 = 0.190 m
25
267
200
150
E. Da Riva, V. Rao
x/x0
[%]
0.09
0.13
0.11
0.14
Pressure Drop
[bar]
4.9
7.2
8